位置：首页 > IC中文资料第1193页 > STP4NC80
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL800V-2.4ohm-4ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   | |
N-CHANNEL800V-2.4ohm-4ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL800V-2.4ohm-4ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
PowerMOSFET 文件：2.12063 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-CHANNEL800V-2.4ohm-4ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL800V-2.4ohm-4ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STP4NC80产品属性
- 类型
描述
- 型号
STP4NC80
- 功能描述
MOSFET TO-220AB
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST品牌 |
2016+ |
TO-220F |
6528 |
房间原装进口现货假一赔十 |
|||
ST/意法 |
23+ |
NA/ |
3279 |
原厂直销,现货供应,账期支持! |
|||
ST |
23+ |
TO220 |
16900 |
支持样品,原装现货,提供技术支持! |
|||
ST |
17+ |
TO-220F |
2500 |
原装现货热卖 |
|||
ST |
TO-220F |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST |
23+ |
TO-220F |
8795 |
||||
ST |
05+ |
TO-220F |
1590 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
20+ |
TO-220F |
25000 |
全新原装现货,假一赔十 |
|||
ST/意法 |
TO-220F |
265209 |
假一罚十,原包原标签,常备现货 |
||||
ST-意法半导体 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
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STP4NC80规格书下载地址
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DdatasheetPDF页码索引
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