位置：首页 > IC中文资料第623页 > STP3NB60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP3NB60 | N-CHANNELENHANCEMENTMODEPowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
STP3NB60 | N-CHANNELENHANCEMENTMODEPowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STP3NB60 | N-Channel650V(D-S)MOSFET 文件：1.09039 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
N-CHANNELENHANCEMENTMODEPowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-Channel650V(D-S)MOSFET 文件：1.09041 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-CHANNEL6A-600V-TO-220/TO-220FP/D2PAKSHORTCIRCUITPROOFPowerMESHTMIGBT DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL6A-600V-DPAKPowerMESHTMIGBT DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperfomances. ■HIGHINPUTIMPEDANCE ■OFFLOSSESINCLUDETAILCURRENT ■LOWGATECHARGE ■HIGHFREQUENCY | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL3A-600V-TO-220/DPAK/D2PAKPowerMESTMIGBT DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances. Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL3A-600V-TO-220/TO-220FP/D2PAKPowerMESHTMIGBT 文件：586.42 Kbytes Page：12 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL3A-600V-DPAKPowerMESHTMIGBT 文件：305.96 Kbytes Page：9 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STP3NB60产品属性
- 类型
描述
- 型号
STP3NB60
- 功能描述
MOSFET RO 512-FQP3N60 3/05
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
isc |
2024 |
TO-220 |
1000 |
国产品牌isc,可替代原装 |
|||
原装STM |
21+ |
TO-220 |
35200 |
一级代理/放心采购 |
|||
23+ |
N/A |
45980 |
正品授权货源可靠 |
||||
ST |
22+ |
TO-220 |
30000 |
原装正品 |
|||
ST |
TO-220 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
17+ |
TO-220 |
1250 |
原装现货热卖 |
|||
ST |
2020+ |
TO-220 |
350000 |
100%进口原装正品公司现货库存 |
|||
ST/意法 |
21+ |
TO-220 |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
|||
ST/意法 |
TO-220 |
265209 |
假一罚十,原包原标签,常备现货 |
||||
ST/意法 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
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STP3NB60规格书下载地址
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STP3NB60数据表相关新闻
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2020-3-12
DdatasheetPDF页码索引
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