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STL26NM60N价格
参考价格：￥19.0644
型号：STL26NM60N 品牌：STMICROELECTRONICS 备注：这里有STL26NM60N多少钱，2024年最近7天走势，今日出价，今日竞价，STL26NM60N批发/采购报价，STL26NM60N行情走势销售排行榜，STL26NM60N报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STL26NM60N | N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=21A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=175mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STL26NM60N产品属性
- 类型
描述
- 型号
STL26NM60N
- 功能描述
MOSFET N-Ch 600V 0.160 Ohm 19A HV Mdmesh II
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
21+ |
N/A |
3000 |
深圳通 |
|||
ST/意法 |
24+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
ST意法半导体 |
22+21+ |
DFN8X8 |
9678 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
ST |
21+ |
QFN |
10000 |
全新原装 公司现货 价格优 |
|||
ST/意法 |
23+ |
NA |
25630 |
原装正品 |
|||
ST |
22+23+ |
QFN |
26808 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
22+ |
NA |
10000 |
绝对全新原装现货热卖 |
|||
ST/意法 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
ST(意法半导体) |
23+ |
SMD |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ST/意法 |
23+ |
NA/ |
10789 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
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瀚佳科技（深圳）有限公司专业进口电子元器件代理商
2019-9-5
DdatasheetPDF页码索引
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