Small Type Tactile Switches

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包装：散装 描述：FUSE KNOB ASSEMBLY 电路保护 配件

N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithan enhancedtrenc

Single-chip worldwide iDTV processor

Description TheSTi1010isahighly-integrated,high-performancesystem-on-chipiDTVprocessorcompliantwithworldwidedigitalTVstandardssuchasATSC(US),DVB(Europe),ARIB(Japan),DMB-TH(China)andPAL/SECAM/NTSCanalogTVstandards. TheSTi1010providesacost-optimizedsolutionforiD

N-channel 600 V, 0.53 Ω typ.,10 A MDmesh™ II Power MOSFET in I²PAK package

Features •100avalanchetested •Lowinputcapacitanceandgatecharge •Lowgateinputresistance Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgenerationof MDmesh™technology.ThisrevolutionaryPower MOSFET

N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description ThedeviceisanN-channelFDmesh™IIPowerMOSFETthatbelongstothesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwi

isc N-Channel MOSFET Transistor

FEATURES •DrainCurrent–ID=6.3A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchinga

N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth

N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

isc N-Channel Mosfet Transistor

•FEATURES •DrainCurrentID=8.5A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

High voltage fast-switching NPN power transistor

Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■STI13005-

Isc N-Channel MOSFET Transistor

•FEATURES •DrainCurrent–ID=11A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=360mΩ(Max) •100avalanchetested •Lowinputcapacitanceandgatecharge •MinimumLot-to-Lotvariationsforrobustdevice performanceandrelia

N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

isc N-Channel Mosfet Transistor

•FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages

Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

N-channel 650 V, 0.33 廓, 12 A MDmesh??II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’slowestonresistanceandgatecharge.Itisthereforesuitableforthemos

N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh™Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

N-channel 600 V - 0.27 廓 - 14 A - FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

Description TheFDmesh™IIseriesbelongstothesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedonresistanceandfastswitchingwithanintrinsicfastrecoverybodyd

N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh™Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

isc N-Channel Mosfet Transistor

•FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

N-channel 500 V - 0.21 廓 - 15 A MDmesh??II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

Automotive-grade N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in an I²PAK package

Features Designedforautomotiveapplicationsand AEC-Q101qualified Verylowon-resistance Verylowgatecharge Highavalancheruggedness Lowgatedrivepowerloss Applications Switchingapplications Powertools Description ThisdeviceisanN-channelPowerMOSFET

N-channel 250V - 0.14廓 - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET??II Power MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET™processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconverters. Generalfeatures ■Lowg

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Application •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh™M2

N-channel 650 V - 0.25 廓 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh™Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in an I²PAK package

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •Verylowturn-offswitchinglosses •100avalanchetested •Zener-protected Applications •Switchingapplications •Tailoredforveryhighfrequencyconverters(f>150kHz) Description Thisdevicei

N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerMOSFETsbasedonaninnovative proprietaryve

N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

N-channel 600 V, 0.17 廓, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

Description TheFDmesh™IIseriesbelongstothesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedonresistanceandfastswitchingwithanintrinsicfastrecoverybodyd

N-channel 600 V, 0.2 廓, 16 A MDmesh??II Power MOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

N-channel 600 V, 162 m typ., 17 A, MDmesh™ M6 Power MOSFET in an I²PAK package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmesh™M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making

Extremely low gate charge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh™M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

N-channel 40 V, 1.7 m廓 typ., 160 A, STripFET??VI DeepGATE??Power MOSFET in a I짼PAK package

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthe6thgenerationofSTripFET™DeepGATE™technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features ■StandardlevelVGS(th) ■100avalancherated Applications ■

isc N-Channel MOSFET Transistor

DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=22A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=139mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre

N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode)

Description TheFDmesh™IIseriesbelongstothesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybody

N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247

Description TheFDmesh™IIseriesbelongstothesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybody

isc N-Channel MOSFET Transistor

DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=22A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=148mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre

N-channel 650 V, 0.095 廓, 24 A, MDmesh??V Power MOSFET in D짼PAK, I짼PAK, TO-220FP, TO-220, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

N-channel 600 V, 105 m typ., 25 A, MDmesh M6 Power MOSFET in an I2PAK package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof

N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features •WorldwidebestRDS(on)*area •HigherVDSSratingandhighdv/dtcapability •Excellentswitchingperformance •100avalanchetested Applications •Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerMOSFETsbasedonaninnovative proprietaryve

isc N-Channel MOSFET Transistor

FEATURES •DrainCurrent–ID=28A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=110mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingapp

28V High Efficiency 1MHz, 2A Step Up Regulator

FEATURES Integrated80mΩPowerMOSFET 2Vto24VInputVoltage 1MHzFixedSwitchingFrequency Internal4ASwitchCurrentLimit AdjustableOutputVoltage InternalCompensation Upto28VOutputVoltage AutomaticPulseFrequencyModulation ModeatLightLoads upto97Eff

N-channel 650 V, 0.085 廓, 27 A, MDmesh??V Power MOSFET in D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

isc N-Channel MOSFET Transistor

•FEATURES •WithTO-262(I2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switching

Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET™ F7 Power MOSFET in an I²PAK package

Features Designedforautomotiveapplications AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Applications Switchingapplications Description ThisN-channelPowerMOSFETutilizes STripFE

N-channel 650 V, 0.070 ?? 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247

Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic

isc N-Channel MOSFET Transistor

FEATURES •DrainCurrent–ID=33A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingappl

N-channel 650 V, 0.070 廓, 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247

Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic

N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithanenhancedtrenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternalcapacitanceandgatechargeforfasterandmoreefficientswitching. Features •AmongthelowestRDS(on)on

Automotive-grade N-channel 600 V, 70 m typ., 36 A MDmeshTM DM6 Power MOSFET in an I²PAK package

Features •AEC-Q101qualified •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETis

N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET

Description TheseSuperMESH3™PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH™technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026 ohm

Description TheSTI50DE100ismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology. TheSTI50DE100isdesignedforuseinindustrialconvertersand/orweldingequipment. Generalfea

Low-cost interactive set-top box decoder

Description TheSTi5100providesthepowerandfeaturesrequiredtomeetthespecificationsofthemostdemandingbroadcastersandcanbeusedinsatellite,terrestrial,cableorIPset-topboxes.The STi5100alsoprovidesaUSB2.0hostinterfacewhichallowsconsumerstoconnectawiderang

Low-cost interactive set-top box decoder

Description TheSTi5100providesthepowerandfeaturesrequiredtomeetthespecificationsofthemostdemandingbroadcastersandcanbeusedinsatellite,terrestrial,cableorIPset-topboxes.The STi5100alsoprovidesaUSB2.0hostinterfacewhichallowsconsumerstoconnectawiderang

Low-cost interactive set-top box decoder

Description TheSTi5100providesthepowerandfeaturesrequiredtomeetthespecificationsofthemostdemandingbroadcastersandcanbeusedinsatellite,terrestrial,cableorIPset-topboxes.The STi5100alsoprovidesaUSB2.0hostinterfacewhichallowsconsumerstoconnectawiderang

Low-cost interactive set-top box decoder

Description TheSTi5100providesthepowerandfeaturesrequiredtomeetthespecificationsofthemostdemandingbroadcastersandcanbeusedinsatellite,terrestrial,cableorIPset-topboxes.The STi5100alsoprovidesaUSB2.0hostinterfacewhichallowsconsumerstoconnectawiderang