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STD6价格
参考价格：￥34.8544
型号：STD6 品牌：Cooper Bussmann 备注：这里有STD6多少钱，2024年最近7天走势，今日出价，今日竞价，STD6批发/采购报价，STD6行情走势销售排行榜，STD6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STD6 | Circuit Protection Solutions Low Voltage Fuse Links Catalogue 文件：4.91849 Mbytes Page：55 Pages | COOPER 科普斯株洲市科普斯科技有限公司 |  |   |
N-Channel E nhancement Mode F ield E ffect Transistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | Samhop 三合微科 |  | | |
N-Channel Logic Level E nhancement Mode Field Effect Transistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | Samhop 三合微科 | | | |
N-Channel Logic Level E nhancement Mode Field Effect Transistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | Samhop 三合微科 | | | |
N-channel 30 V, 0.0072 廓, 48 A - DPAK - IPAK STripFET??V Power MOSFET Description ThisSTripFET™VPowerMOSFETtechnologyisamongthelatestimprovements,whichhavebeenespeciallytailoredtoachieveverylowon-stateresistanceprovidingalsooneofthebest-in-classFOM. Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Ver | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | | |
N-channel 55V - 8.0m??- 65A - DPAK - IPAK MDmesh??low voltage Power MOSFET Description Thisn-channelenhancementmodePowerMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™“strip-basedprocesswithlesscriticalaligmentstepsandthereforearemarkablemanufacturingreproducibility.Theresultingtransistorshowsextremelyhighpackin | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 55V - 8.0m??- 65A - DPAK - IPAK MDmesh??low voltage Power MOSFET Description Thisn-channelenhancementmodePowerMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™“strip-basedprocesswithlesscriticalaligmentstepsandthereforearemarkablemanufacturingreproducibility.Theresultingtransistorshowsextremelyhighpackin | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL 60V - 0.014ohm - 60A DPAK STripFET??II POWER MOSFET Description ThisPowerMosfetseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecomandComputera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 60V - 0.014ohm - 60A - DPAK Description ThisPowerMosfetseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecomandComputera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 60V - 0.014ohm - 60A - DPAK Description ThisPowerMosfetseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecomandComputera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL 30V - 0.0075ohm - 60A DPAK STripFET??II POWER MOSFET Description ThisapplicationspecificPowerMOSFETisthethirdgenarationofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsthebesttrade-offbetweenon-resistanceanggatecharge.Whenusedashighandlowsideinbuckregulators,itgives | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL 55V - 0.012ohm - 60A DPAK STripFET??II POWER MOSFET Description ThisMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkable | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
HIGH VOLTAGE NPN POWER TRANSISTOR DESCRIPTION TheSTD616AismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagewithstandcapability. ■REVERSEPINSOUTVsSTANDARDIPAK (TO-251)/DPAK(TO-252)PACKAGES ■HIGHVOLTAGECAPABILITY ■HIGHDCCURRENTGAIN ■THROUGH-HO | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
HIGH VOLTAGE NPN POWER TRANSISTOR DESCRIPTION TheSTD616AismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagewithstandcapability. ■REVERSEPINSOUTVsSTANDARDIPAK (TO-251)/DPAK(TO-252)PACKAGES ■HIGHVOLTAGECAPABILITY ■HIGHDCCURRENTGAIN ■THROUGH-HO | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
HIGH VOLTAGE NPN POWER TRANSISTOR DESCRIPTION TheSTD616AismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagewithstandcapability. ■REVERSEPINSOUTVsSTANDARDIPAK (TO-251)/DPAK(TO-252)PACKAGES ■HIGHVOLTAGECAPABILITY ■HIGHDCCURRENTGAIN ■THROUGH-HO | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
HIGH VOLTAGE NPN POWER TRANSISTOR DESCRIPTION TheSTD616AismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagewithstandcapability. ■REVERSEPINSOUTVsSTANDARDIPAK (TO-251)/DPAK(TO-252)PACKAGES ■HIGHVOLTAGECAPABILITY ■HIGHDCCURRENTGAIN ■THROUGH-HO | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
NPN Silicon Transistor Features •Verylowsaturationvoltage:VCE(sat)=0.2V(Max.)@IC=50mA,IB=5mA •HighDCcurrentgain:hFE=1000~2500 •SmallsizeSMDpackage Application •MicomDirectdriveandswitchingApplication | AUK AUK |  | | |
NPN Silicon Transistor Features •Verylowsaturationvoltage:VCE(sat)=0.2V(Max.) @IC=50mA,IB=5mA •HighDCcurrentgain:hFE=1000~2500 •SmallsizeSMDpackage Application •MicomDirectdriveandswitchingApplication | KODENSHIKodenshi Group 可天士可天士光电子集团 |  | | |
NPN Silicon Transistor Application •MicomDirectdriveandswitchingApplication Features •Verylowsaturationvoltage:VCE(sat)=0.2V(Max.)@IC=50mA,IB=5mA •HighDCcurrentgain:hFE=1000~2500 | AUK AUK | | | |
NPN Silicon Transistor Application •MicomDirectdriveandswitchingApplication Features •Verylowsaturationvoltage:VCE(sat)=0.2V(Max.)@IC=50mA,IB=5mA •HighDCcurrentgain:hFE=1000~2500 | KODENSHIKodenshi Group 可天士可天士光电子集团 | | | |
N-channel 650 V, 132 mΩ typ., 20 A MDmesh M9 Power MOSFET in a DPAK package Description ThisN-channelPowerMOSFETisbasedonthemostinnovativesuper-junction MDmeshM9technology,suitableformedium/highvoltageMOSFETsfeaturingvery lowRDS(on)perarea.ThesiliconbasedM9technologybenefitsfromamulti-drain manufacturingprocesswhichallowsanenhanced | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 55V - 8.0mΩ - 65A - DPAK MDmesh™ low voltage Power MOSFET Generalfeatures ■Standardthresholddrive ■100avalanchetested Description ThisN-ChannelenhancementmodePower MOSFETisthelatestrefinementof STMicroelectronicunique“SingleFeatureSize™“ strip-basedprocesswithlesscriticalaligment stepsandthereforearemarkablemanufac | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 55V - 8.0m ohm - 65A - DPAK STripFET TM Power MOSFET Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingSTripFET™F3technology.Itisdesignedtominimizeon-resistanceandgatechargetoprovidesuperiorswitchingperformance. Features •AEC-Q101qualified •100avalanchetested Applications •Switchingapplications | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 55 V, 7.0, 80 A DPAK STripFET III Power MOSFET Description ThisproductisaN-channelenhancementmodePowerMOSFETbuiltwithSTripFET™IIItechnologywhichisespeciallytailoredtominimizedon-stateresistanceandgatecharge,providingsuperiorswitchingperformance. Features ■Lowthresholddrive ■100avalanchetested Application | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 60V - 11.5m廓 - 60A - DPAK/TO-220 STripFET??II Power MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”™ strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforea | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | Samhop 三合微科 | | | |
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | Samhop 三合微科 | | | |
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | Samhop 三合微科 | | | |
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package | Samhop 三合微科 | | | |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.35Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUG | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Zener-protected Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhighef | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL 100V - 0.22 ohm - 6A IPAK/DPAK LOW GATE CHARGE STripFET??POWER MOSFET Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersfortelecoma | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersfortelecoma | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersfortelecoma | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersfortelecoma | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET ■TYPICALRDS(on)=0.93Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURING REPEATIBILITY DESCRIPTION TheSuperMESH™seriesisobtainedthroughan extremeoptimizationofST’swellestablishedst | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET ■TYPICALRDS(on)=0.93Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURING REPEATIBILITY DESCRIPTION TheSuperMESH™seriesisobtainedthroughan extremeoptimizationofST’swellestablishedst | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：474.69 Kbytes Page：4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 |  | | |
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：1.91074 Mbytes Page：4 Pages | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) |  | | |
STD 文件：67.81 Kbytes Page：1 Pages | VCC Visual Communications Company |  | | |
N-Channel 30-V (D-S) MOSFET 文件：996.87 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-Channel 30-V (D-S) MOSFET 文件：996.79 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 文件：116.67 Kbytes Page：10 Pages | Samhop 三合微科 | | | |
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：474.69 Kbytes Page：4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | | | |
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：1.91074 Mbytes Page：4 Pages | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) | | | |
Thyristor-Diode Modules 文件：241.74 Kbytes Page：4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | | | |
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：474.69 Kbytes Page：4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | | | |
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：1.91074 Mbytes Page：4 Pages | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) | | | |
Thyristor-Diode Modules 文件：241.74 Kbytes Page：4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | | | |
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：474.69 Kbytes Page：4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | | | |
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：1.91074 Mbytes Page：4 Pages | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) | | | |
Thyristor-Diode Modules 文件：241.74 Kbytes Page：4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | | | |
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：474.69 Kbytes Page：4 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | | |
STD6产品属性
- 类型
描述
- 型号
STD6
- 功能描述
保险丝 6A 240VAC INDUSTRIAL
- RoHS
否
- 制造商
Littelfuse
- 产品
Surface Mount Fuses
- 电流额定值
0.5 A
- 电压额定值
600 V
- 保险丝类型
Fast Acting
- 保险丝大小/组
Nano
- 尺寸
12.1 mm L x 4.5 mm W
- 端接类型
SMD/SMT
- 系列
485
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO252 |
10000 |
原装正品!假一罚十! |
|||
ST |
21+ |
TO-252 |
6540 |
只做原装正品假一赔十!正规渠道订货! |
|||
ST |
2107+ |
TO-252 |
2500 |
全新原装公司现货
|
|||
ST |
2020+ |
TO252DPAK |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
24+ |
TO-252 |
7500 |
十年信誉,只做全新原装正品现货, |
|||
STMicroelectronics Asia Pacifi |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
ST(意法) |
23+ |
TO-252-3 |
25900 |
新到现货,只有原装 |
|||
ST/意法 |
21+ |
TO252 |
50000 |
只做原装 |
|||
ST |
N/A |
22500 |
有挂就有正品原装 |
||||
ST/意法半导体 |
2023 |
TO-252-3 |
6000 |
公司原装现货/支持实单 |
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- STD412S
STD6数据表相关新闻
STD44N4LF6
进口代理
2023-9-1STD6N95K5
STD6N95K5
2023-6-9STD40P8F6AG
全新原装现货支持第三方机构验证
2022-6-2STD65N3LLH5
STD65N3LLH5,全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.
2021-7-18STD60NF55LTG全新原装现货
STD60NF55LTG，全新原装现货0755-82732291当天发货或门市自取.
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2020-11-23
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