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STB20NM60价格
参考价格：￥25.6196
型号：STB20NM60D 品牌：STMicroelectronics 备注：这里有STB20NM60多少钱，2024年最近7天走势，今日出价，今日竞价，STB20NM60批发/采购报价，STB20NM60行情走势销售排行榜，STB20NM60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STB20NM60 | N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
STB20NM60 | N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STB20NM60 | iscN-ChannelMOSFETTransistor 文件：313.78 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL650V@Tjmax-0.25Ohm-20AI짼PAK/TO-220/TO-220FP DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel600V-0.26廓-20A-D2PAKFDmesh??PowerMOSFET Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100A | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
iscN-ChannelMOSFETTransistor 文件：358.54 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：313.79 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE) Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE) Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
20A,600VN-CHANNELSUPER-JUNCTIONMOSFET 文件：240.75 Kbytes Page：6 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
N-Channel650-V(D-S)SuperJunctionMOSFET 文件：1.15454 Mbytes Page：11 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
STB20NM60产品属性
- 类型
描述
- 型号
STB20NM60
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-Channel 600V 20A D2PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
D2-PAK |
8560 |
受权代理!全新原装现货特价热卖! |
|||
23+ |
N/A |
65210 |
正品授权货源可靠 |
||||
STM |
23+ |
TO-263-3 (D2PAK) |
50000 |
原装正品 支持实单 |
|||
ST |
23/22+ |
TO263-3 |
2000 |
代理渠道.实单必成 |
|||
ST/意法半导体 |
22+ |
TO-263-3 |
12820 |
正规渠道,只有原装! |
|||
ST/意法半导体 |
23+ |
TO-263-3 |
4650 |
绝对原装公司现货 |
|||
ST/意法 |
SOT-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
ST/意法半导体 |
2023+ |
TO-263-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
STMicroelectronics |
23+ |
D2PAK |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ST |
2020+ |
TO-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
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