N-CHANNELPOWERMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=500V ■LowerRDS(ON):4.046Ω(Typ.)

N-Channel650V(D-S)MOSFET

文件：1.08835 Mbytes Page：9 Pages

iscN-ChannelMOSFETTransistor

文件：321.21 Kbytes Page：2 Pages

DrainCurrentID=1.2A@TC=25C

•FEATURES •DrainCurrentID=1.2A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=5.5Ω(Max) •FastSwitching •APPLICATIONS •Switchmodepowersupply.

N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR

DESCRIPTION TheUTC1N50AisanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanch

1.3A,500VN-CHANNELPOWERMOSFET

文件：177.99 Kbytes Page：6 Pages

1.3Amps,500VoltsN-CHANNELPOWERMOSFET

文件：169.79 Kbytes Page：6 Pages

GOLDBONDEDGERMANIUMDIODE

文件：43.32 Kbytes Page：1 Pages