SPP02N60C3价格

参考价格:¥3.1531

型号:SPP02N60C3 品牌:Infineon 备注:这里有SPP02N60C3多少钱,2024年最近7天走势,今日出价,今日竞价,SPP02N60C3批发/采购报价,SPP02N60C3行情走势销售排行榜,SPP02N60C3报价。
型号 功能描述 生产厂家&企业 LOGO 操作
SPP02N60C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
SPP02N60C3

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
SPP02N60C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

文件:462.48 Kbytes Page:12 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
SPP02N60C3

COOLMOSPOWERTRANSISTOR

文件:462.48 Kbytes Page:12 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

文件:462.48 Kbytes Page:12 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

COOLMOSPOWERTRANSISTOR

文件:462.48 Kbytes Page:12 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

N-ChannelMOSFETTransistor

•DESCRITION •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

CoolMOSPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

N-Channel650V(D-S)MOSFET

文件:1.71683 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SPP02N60C3产品属性

  • 类型

    描述

  • 型号

    SPP02N60C3

  • 功能描述

    MOSFET COOL MOS N-CH 600V 1.8A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-29 10:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
23/22+
TO220
2000
全线可订货.含税开票
INFINEON
21+
TO-220
9866
英飞翎
17+
TO-220
31518
原装正品 可含税交易
INFINEON
22+
TO-220
8880
原装认准芯泽盛世!
INFINEON/英飞凌
2021+
TO-220
18290
原装进口假一罚十
INFINOEN
23+
TO-220-3
90000
一级代理进口原装现货、假一罚十价格合理
INFINE0N
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
INFINEON/英飞凌场效应管
20+
TO-220
6000
16年电子元件现货供应商 终端BOM表可配单提供样品
INFINEON
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
INFINEON
17+
TO-220
6000
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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