Over Voltage & Under Voltage Cut-Off With Surge Protection Device

OVCDFeatures •ExtendsTheLifeOfYourFixtureByEliminating TemporaryOver/UnderVoltagesthatCan HarmSensitiveElectronicComponents •Over6,000OperationsPerProductLifetime •SafeRestore™ -30SecondDelayonPower-Up -InstantDroponOver/UnderVoltageCondition -30SecondDel

C to Ku Band Mixer, Detector, Modulator Applications

Features •Verysmall-sizedceramicpackage •Lessparasiticcomponents,conversionloss •Manytypes:5singletypes,10integratedtypes

20 Amp 50-400 Volt 120 nsec FAST RECOVERY RECTIFIER

Features: •FastRecovery:120nsecmaximum •LowReverseLeakageCurrent •SingleChipConstruction •PIVto400V •HermeticallySealed •HighSurgeRating •LowThermalResistance •HigherVoltageDevicesAvailable–ContactFactory •ForReversePolarityAddSuffix“R” •Replacementfor

Compact, High-Performance String Pot Dual Ouput to 50

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Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

N-Channel 650 V (D-S) MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

Cool MOS Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

N-Channel MOSFET Transistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

SIPMO Power Transistor

SIPMOS®PowerTransistor •N-Channel •Enhancementmode •Avalancherated

Cool MOS Power Transistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances

N-Channel MOSFET Transistor

•DESCRITION •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

N-Channel 650 V (D-S) MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapp

N-Channel MOSFET Transistor

•DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤2.7Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

CoolMOS Power Transistor

Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

Cool MOS Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant;availableHalogenfreemoldcompounda) •Qualifiedaccording

N-Channel MOSFET Transistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

Cool MOS Power Transistor

CoolMOS™PowerTransistor Features •Newrevolutioanaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplaing;RoHScompliant •QualifiedaccordingtoJEDECfortar

N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

N-Channel MOSFET Transistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

Cool MOS Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

N-Channel MOSFET Transistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvednoiseimmunity

Cool MOS Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance

N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.95Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

60W, Single Output Adapter

[SUNPOWERTECHNOLOGYCORP.] Features: ＊UniversalACinput88~264VAC ＊Lowripplenoise ＊Overload,overvoltage&shortcircuitprotection ＊ACinletIEC320C14 ＊Singleoutputmodelsnonminloadrequirement ＊10050℃burn-intest ＊UL,cUL,TUV,CB,CEstandard ＊1yearswa

N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.75Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

CoolMOS Power Transistor

Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Highpeakcurrentcapability •Ultraloweffectivecapacitances •Extremedv/dtrated •Improvedtransconductance •Pb-freeleadplating;RoHScompliant availableinHalogenfreem

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated

N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.9Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

SIPMOS Power Transistor

Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated

N-Channel MOSFET Transistor

•DESCRITION •Idealforhigh-frequencyswitchingandsynchronousrectification •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

N-Channel 200 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO-251andTO-252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvednoiseimmunity

Cool MOS Power Transistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO-251andTO-252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplating;Rohscom

N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

Cool MOS??Power Transistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO-251andTO-252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHS

1 AMP 80-100 VOLTS SCHOTTKY RECTIFIER

FEATURES: ■PIVto100Volts ■ExtremelyLowForwardVoltageDrop ■LowReverseLeakageCurrent ■HighSurgeCapacity ■HighVoltageReplacementfor: ■1N5817-1N5819Series ■Surfacemountversionsavailable ■TX,TXV,andSpaceLevelScreeningAvailable

2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER

Features: •PIVto100Volts •ExtremelyLowForwardVoltageDrop •LowReverseLeakageCurrent •HighSurgeCapacity •HV/Replacementfor1N5817-1N5819Series •HermeticallySealed •TX,TXV,andSpaceLevelScreeningAvailable2/ •CategoryIIImetallurgicalbondperMILPRF19500appen

2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER

Features: •PIVto100Volts •ExtremelyLowForwardVoltageDrop •LowReverseLeakageCurrent •HighSurgeCapacity •HV/Replacementfor1N5817-1N5819Series •HermeticallySealed •TX,TXV,andSpaceLevelScreeningAvailable2/ •CategoryIIImetallurgicalbondperMILPRF19500appen

SIPMOS-R POWER TRANSISTOR

Features •Nchannel •Enhancementmode •Avalancherated •LogicLevel •dv/dtrated •175˚Coperatingtemperature

SIPMOS Power Transistor

Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO-252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant;availableinHalogenfreem

N-Channel MOSFET Transistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤600mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

1 AMP 80-100 VOLTS SCHOTTKY RECTIFIER

FEATURES: ■PIVto100Volts ■ExtremelyLowForwardVoltageDrop ■LowReverseLeakageCurrent ■HighSurgeCapacity ■HighVoltageReplacementfor: ■1N5817-1N5819Series ■Surfacemountversionsavailable ■TX,TXV,andSpaceLevelScreeningAvailable

2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER

Features: •PIVto100Volts •ExtremelyLowForwardVoltageDrop •LowReverseLeakageCurrent •HighSurgeCapacity •HV/Replacementfor1N5817-1N5819Series •HermeticallySealed •TX,TXV,andSpaceLevelScreeningAvailable2/ •CategoryIIImetallurgicalbondperMILPRF19500appen

2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER

Features: •PIVto100Volts •ExtremelyLowForwardVoltageDrop •LowReverseLeakageCurrent •HighSurgeCapacity •HV/Replacementfor1N5817-1N5819Series •HermeticallySealed •TX,TXV,andSpaceLevelScreeningAvailable2/ •CategoryIIImetallurgicalbondperMILPRF19500appen

SIPMOS PowerTransistor

Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature

SIPMOS Power-Transistor

Feature •P-Channel •Enhancementmode •LogicLevelprueb •175°Coperatingtemperature •Avalancherated •dv/dtrated •P-channel •Enhancementmode •LogicLevel •175°Coperatingtemperature •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant °Qualifiedaccord

P-channel Enhancement Mode Power MOSFET

Features VDS=-60V,ID=-30A RDS(ON)

1 AMP 80-100 VOLTS SCHOTTKY RECTIFIER

FEATURES: ■PIVto100Volts ■ExtremelyLowForwardVoltageDrop ■LowReverseLeakageCurrent ■HighSurgeCapacity ■HighVoltageReplacementfor: ■1N5817-1N5819Series ■Surfacemountversionsavailable ■TX,TXV,andSpaceLevelScreeningAvailable

2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER

Features: •PIVto100Volts •ExtremelyLowForwardVoltageDrop •LowReverseLeakageCurrent •HighSurgeCapacity •HV/Replacementfor1N5817-1N5819Series •HermeticallySealed •TX,TXV,andSpaceLevelScreeningAvailable2/ •CategoryIIImetallurgicalbondperMILPRF19500appen