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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPB80N03 | SIPMOSPowerTransistor Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175°Coperatingtemperature | SIEMENS Siemens Ltd |  |   |
Enhancementmode Features •Nchannel •Enhancementmode •Avalancherated •LogicLevel •dv/dtrated •175°Coperatingtemperature | SIEMENS Siemens Ltd | | | |
OptiMOSPower-Transistor Feature •N-Channel •Enhancementmode •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
OptiMOSPower-Transistor OptiMOS®Power-Transistor Feature •N-Channel •Enhancementmode •LogicLevel •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSPower-Transistor OptiMOS®Power-Transistor Feature •N-Channel •Enhancementmode •LogicLevel •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSPower-Transistor OptiMOS®Power-Transistor Feature •N-Channel •Enhancementmode •LogicLevel •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSPower-Transistor OptiMOS®Power-Transistor Feature •N-Channel •Enhancementmode •LogicLevel •LowOn-ResistanceRDS(on) •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-Channel30-V(D-S)MOSFET 文件：1.00146 Mbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
FastSwitchingCharacteristic 文件：82.72 Kbytes Page：7 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 |  | | |
FastSwitchingCharacteristic 文件：82.72 Kbytes Page：7 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-ChannelPowerMOSFET 文件：996.62 Kbytes Page：4 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | |
SPB80N03产品属性
- 类型
描述
- 型号
SPB80N03
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
SIPMOS Power Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEO |
2020+ |
SOT-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INENOI |
20+ |
SOT263 |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
西门子 |
24+ |
TO-263 |
860000 |
明嘉莱只做原装正品现货 |
|||
INFINE0N |
20+ |
TO-263 |
90000 |
原装正品现货/价格优势 |
|||
Siemens/西门子 |
22+ |
263 |
12800 |
本公司只做进口原装!优势低价出售! |
|||
Infineon(英飞凌) |
23+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INENOI |
2207+ |
SOT263 |
18676 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
INFINEON |
23+ |
TO262 |
6996 |
只做原装正品现货 |
|||
infineon |
1741+ |
TO263 |
6528 |
只做进口原装正品假一赔十! |
|||
INFINEON |
TO263-3-2 |
22+ |
10000 |
终端免费提供样品 可开13%增值税发票 |
SPB80N03芯片相关品牌
SPB80N03规格书下载地址
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SPB80N03数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPC5602BK0VLL6
SPC5602BK0VLL6
2021-3-17SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3BSZ520N15NS3G电信，供电系统
2019-8-6SPA20N60CFD-CoolMOS功率晶体管
特点•新的革命高电压技术•内在的快速恢复体二极管•极低的反向恢复电荷•超低栅极电荷•至尊的dv/dt的额定•高峰值电流能力•定期雪崩额定•合格的为工业级应用根据JEDEC0）•无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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