位置：首页 > IC中文资料第9272页 > SMG3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Voltage-Controlled Attenuator Module 100 to 2000 MHz
| MACOM Tyco Electronics |  |   | |
Voltage-Controlled Attenuator Module 100 to 2000 MHz Description TheG30attenuatorisadiscretehybriddesign,whichusesthinfilmmanufacturingprocessesforaccurateperformanceandhighreliability. Thisdesignusesthreepindiodestoprovideanonlinearattenuationresponseacrossabroadbandfrequencyrange. BothTO-8andSurfaceMount | MA-COM M/A-COM Technology Solutions, Inc. |  | | |
N-Channel 30-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel 30-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel 30-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel Enhancement Mode Power Mos.FET 文件：719.61 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH |  | | |
N-Channel Enhancement Mode MOSFET 文件：607.46 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
P-Channel Enhancement Mode Power Mos.FET 文件：498.62 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
N-Channel Enhancement Mode Power Mos.FET 文件：417.01 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
N-Channel Enhancement Mode Power Mos.FET 文件：422.32 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
P-Channel Enhancement Mode Power Mos.FET 文件：529.33 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
P-Channel Enhancement Mode Power Mos.FET 文件：521.51 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
P-Channel Enhancement Mode MOSFET 文件：302.1 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
N-Ch Enhancement Mode Power MOSFET 文件：689.49 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
N-Ch Enhancement Mode Power MOSFET 文件：689.49 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
P-Channel Enhancement Mode Power Mos.FET 文件：407.88 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
P-Channel Enhancement Mode Power Mos.FET 文件：413.24 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
P-Channel Enhancement Mode Power Mos.FET 文件：452.94 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
P-Channel Enhancement Mode Power Mos.FET 文件：512.71 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
P-Channel Enhancement Mode MOSFET 文件：652.5 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
封装/外壳：径向，Can 包装：散装 描述：CAP ALUM 100UF 20% 350V RADIAL 电容器 铝电解电容器 | UCCUnited Chemi-Con United Chemi-Con |  | | |
封装/外壳：径向，Can 包装：散装 描述：CAP ALUM 10UF 20% 350V RADIAL 电容器 铝电解电容器 | UCCUnited Chemi-Con United Chemi-Con | | | |
N-Channel Enhancement Mode Power Mos.FET 文件：495.11 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
THYRISTOR(Through Hole/Non-isolated) 文件：464.04 Kbytes Page：3 Pages | SANREXSansha Electric Mfg. Co. Ltd 三力电气制造有限公司 |  | | |
Thyristor 文件：627.31 Kbytes Page：3 Pages | KERSEMI Kersemi Electronic Co., Ltd. |  | | |
THYRISTOR(Surface Mount Device/Non-isolated) 文件：465.54 Kbytes Page：3 Pages | SANREXSansha Electric Mfg. Co. Ltd 三力电气制造有限公司 | | | |
Thyristor 文件：1.029619 Mbytes Page：3 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
P-Channel Enhancement Mode Power Mos.FET 文件：488.94 Kbytes Page：4 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | |
SMG3产品属性
- 类型
描述
- 型号
SMG3
- 制造商
MA-COM
- 制造商全称
M/A-COM Technology Solutions, Inc.
- 功能描述
Voltage-Controlled Attenuator Module 100 to 2000 MHz
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SECOS |
2023+ |
SOT-23 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
M/A-COM |
22+ |
36000 |
原装现货假一赔十 |
||||
SECOS-喜可士 |
24+25+/26+27+ |
SOT-23.贴片 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
SECOS |
22+ |
SC-59 |
9600 |
原装现货,优势供应,支持实单! |
|||
Gowanda Electronics |
24+ |
非标准 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
|||
SECOS |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
SECOS |
2022 |
SOT-23 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
SECOS |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
|||
M/A-COM |
2018+ |
SMD |
5500 |
M/A-COM专营品牌绝对进口原装假一赔十 |
|||
MACOM |
23+ |
NA |
25000 |
##公司100%原装现货 假一罚十!可含税13%免费提供样 |
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