位置：首页 > IC中文资料第4604页 > SKP02N120
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SKP02N120 | FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistributi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
封装/外壳：TO-220-3 包装：管件 描述：IGBT 1200V 6.2A 62W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistributi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=0.2A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedfo | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=0.2A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelEnhancementModeAvalancheRated 文件：134.57 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division |  | | |
N-ChannelEnhancementModeAvalancheRated 文件：134.57 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | |
SKP02N120产品属性
- 类型
描述
- 型号
SKP02N120
- 功能描述
IGBT 晶体管 FAST IGBT NPT TECH 1200V 2A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
PG-TO220-3 |
6000 |
原装现货正品 |
|||
INFINEON/英飞凌 |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
Infineon/英飞凌 |
21+ |
PG-TO220-3 |
8800 |
公司只作原装正品 |
|||
INFINEON/英飞凌 |
22+ |
TO-220 |
91713 |
||||
Infineon(英飞凌) |
23+ |
TO-220 |
1259 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
Infineon/英飞凌 |
23+ |
PG-TO220-3 |
25630 |
原装正品 |
|||
Infineon |
1844+ |
LQFP |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON |
23/22+ |
TO220 |
2000 |
全线可订货.含税开票 |
|||
英飞凌 |
新批次 |
N/A |
1500 |
||||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
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2019-3-6
DdatasheetPDF页码索引
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