型号 功能描述 生产厂家&企业 LOGO 操作
SIHF820

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforcommercial-industrialapplicationsatpowerdissipationlev

VishayVishay Siliconix

威世科技

Vishay
SIHF820

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandcurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandcurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalanche VoltageandCurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalanche VoltageandCurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforcommercial-industrialapplicationsatpowerdissipationlev

VishayVishay Siliconix

威世科技

Vishay

DynamicdV/dtrating

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprov

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay

DynamicdV/dtrating

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprov

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

PowerMOSFET

文件:242.26 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:242.26 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:242.26 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:238.32 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:238.32 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:238.32 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:238.32 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:238.32 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

POWERINDUCTOR

●FEATURE 1.Excellentsolderheatresistance(add“C”isforhighcurrenttype) 2.Lowvoltagedropsandsmallvariationsinductance ●APPLICATION 1.DCpowersupplycircuits 2.Powerlinechokecoils…etc

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI

WIREWOUNDSMDINDUCTOR

●FEATURE 1.Lowcorelossforhighfrequencypowerapplication 2.Largeterminalsurface ●APPLICATION 1.Portablecommunicationequipment,notebookcomputer

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI

Screw/plug-interminalstripScrew/screwlessconnection

Theterminalstrip820withpitch10mmhasadualwireterminalconnectoronone side.Here,theleadsareinsertedandclampedallthewaytothestop.These terminalstripsaredesignedforsolidconductors. Theoppositesideisequippedwithscrewconnectionswithrectangularclamping spac

WECOWECO Electrical Connectors Inc

威科电子深圳市威科电子连接器有限公司

WECO

SHIELDEDSMTPOWERINDUCTORS

●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment

PRODUCTWELLProductwell Precision Elect.CO.,LTD

寶德華股台灣寶德華股有限公司

PRODUCTWELL

PanelMount,Shocksafe5x20mmFuses

文件:85.15 Kbytes Page:1 Pages

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

SIHF820产品属性

  • 类型

    描述

  • 型号

    SIHF820

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Power MOSFET

更新时间:2024-5-17 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
22+
TO-263
100000
代理渠道/只做原装/可含税
VISHAY/威世
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
sino
2023+
TO-220
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
VISHAY-威世
24+25+/26+27+
TO-263-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
VISHAY
23+
TO-263
33500
全新原装真实库存含13点增值税票!
VIS
23+
TO-220
10000
原装正品,假一罚十
VISHAY/威世
2022+
TO-220
30000
进口原装现货供应,原装 假一罚十
VISHAY/威世
20+
TO-220
7500
现货很近!原厂很远!只做原装
VISHAY/威世
23+
TO-220
10000
公司只做原装正品
VB
2019
TO-220
55000
绝对原装正品假一罚十!

SIHF820芯片相关品牌

  • ALLIED
  • DIODES
  • EATON
  • etc2
  • HARTING
  • Littelfuse
  • MERITEK
  • MOLEX1
  • NSC
  • RALTRON
  • SUMIDA
  • TEC

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