位置：首页 > IC中文资料第6097页 > SIHF634NS
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHF634NS | PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 |  |   |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技 | | | |
T-1SubminiatureLamps T-1¼SubminiatureLamps | GILWAY Gilway Technical Lamp |  | | |
634MSeriesD-SubConnectors|MachinedPins|HighDensityThreeContactRowswith0.350(8.89mm)FootprintRightAngleBend|Receptacle Features HighDensityThreeContactRowswith.350(8.89mm)FootprintRightAngleBendwithMachinedContacts .090(2.29mm)ContactSpacing0.078(1.98mm)RowSpacing PlugandReceptaclein15,26,44or62ContactSizes PinandSocketContactMatingDesignwithP.C.TailTermination M | EDACEDAC, All Rights Reserved. 亚得电子亚得电子（东莞）有限公司 |  | | |
20VComplementaryEnhancementModeFieldEffectTransistor Description TheACE634combinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. Features •N-Channel VDS(V)=20V ID=4A RDS(ON) | ACE ACE Technology Co., LTD. |  | | |
LowFrequencies 文件：141.01 Kbytes Page：2 Pages | OSCILENT Oscilent Corporation |  | | |
DCaxialfans 文件：249.79 Kbytes Page：1 Pages | EBMPAPST ebm-papst |  | |
SIHF634NS产品属性
- 类型
描述
- 型号
SIHF634NS
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay |
2020+ |
TO-220 |
52210 |
公司代理品牌,原装现货超低价清仓! |
|||
VISHAY/威世 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
Vishay |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
|||
VISHAY/威世 |
23+ |
NA/ |
22500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VISHAY/威世 |
23+ |
TO-263 |
22500 |
公司只做原装正品 |
|||
Vishay |
23+ |
TO-263 |
33500 |
全新原装真实库存含13点增值税票! |
|||
VISHAY |
1746+ |
TO220F |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
|||
Vishay |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY/威世 |
TO-263 |
22+ |
6000 |
十年配单,只做原装 |
SIHF634NS芯片相关品牌
SIHF634NS规格书下载地址
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DdatasheetPDF页码索引
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