HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheSGSF464andSGSIF464aremanufacturedusingMultiepitaxialMesatechnologyforcost-effectivehighperformanceandusesaHollowEmitterstructuretoenhanceswitchingspeeds. TheSGSFseriesisdesignedforhighspeedswitchingapplicationssuchaspowersuppliesandhorizontal

464SeriesEdgeConnector|DIN41612

Features Highdensity64Contacts2RowsMetal-to-MetalConnectoron2.54mm(.100”)Grid ContactMaterial:CopperAlloywithselectivegoldplatingandtinontails: CLASS3:2-GoldFlashPlating CLASS2

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=40A@TC=25℃ •DrainSourceVoltage- :VDSS=105V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=28mΩ(Max) •100avalanchetested •MinimumLot-to-L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD464usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceissuitableforuseinhighvoltagesynchronousrectification,loadswitchingandgeneralpurposeapplications.StandardProductAOD464isPb-free(meetsROHS

Superiorvideoperformance,4-channelindustrialvideoencoders

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SurfaceMountFuses-SubminiatureSurfaceMount

文件：56.54 Kbytes Page：1 Pages