位置：首页 > IC中文资料第3149页 > SGH5N120RUFDTU
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
5A,1200VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC5N120provideexcellentRDS(ON),lowgatecharge andoperationwithlowgatevoltages.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. FEATURES0 *RDS(ON)≤3.1Ω@VGS=10V,ID=2.5A *LowReverseTransferCapacitance *FastSwitchingCapabilit | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  |   | |
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
SGH5N120RUFDTU产品属性
- 类型
描述
- 型号
SGH5N120RUFDTU
- 功能描述
IGBT 晶体管
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
TO-247-3 |
8800 |
公司只做原装正品 |
|||
FAIRCHILD |
16+ |
TO247 |
243 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
TO247 |
28533 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十! |
||||
ON |
22+ |
TO-247 |
6000 |
原厂原装,价格优势!13246658303 |
|||
FSC |
2018+ |
TO-3P |
6528 |
承若只做进口原装正品假一赔十! |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
FAIRCHILD/仙童 |
24+23+ |
TO247 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
ON |
24+ |
TO247 |
39500 |
进口原装现货 支持实单价优 |
|||
FAIRCHILD/仙童 |
24+ |
TO247 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
FAIRCHILD/仙童 |
21+ |
TO247 |
1709 |
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