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SFT1晶体管资料

SFT101别名：SFT101三极管、SFT101晶体管、SFT101晶体三极管
SFT101生产厂家：
SFT101制作材料：Ge-PNP
SFT101性质：
SFT101封装形式：
SFT101极限工作电压：24V
SFT101最大电流允许值：0.1A
SFT101最大工作频率：<1MHZ或未知
SFT101引脚数：
SFT101最大耗散功率：0.1W
SFT101放大倍数：
SFT101图片代号：NO
SFT101vtest：24
SFT101htest：999900
SFT101atest：.1
SFT101wtest：.1

SFT101代换 SFT101用什么型号代替：3AX51A,

SFT1价格

参考价格：￥2.3576

型号：SFT1341-C-TL-E 品牌：ON 备注：这里有SFT1多少钱，2024年最近7天走势，今日出价，今日竞价，SFT1批发/采购报价，SFT1行情走势销售排行榜，SFT1报价。

型号	功能描述	生产厂家&企业
SFT1	SUPER FAST RECTIFIER DIODES FEATURES: Highcurrentcapability Highsurgecurrentcapability Highreliability Lowreversecurrent Lowforwardvoltagedrop Superfastrecoverytime *Pb/RoHSFree	SYNSEMI SynSemi，Inc.
SFT1	SUPER FAST RECTIFIER DIODES 文件：39.91 Kbytes Page：2 Pages	EIC EIC
SFT1	SUPER FAST RECTIFIER DIODES 文件：42.3 Kbytes Page：2 Pages	EIC EIC
SFT10000/3	20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR Features: •BVCEO350Volts •LowSaturationVoltage •200oCOperatingTemperature •HermeticallySealed,IsolatedPackage •TX,TXV,S-LevelScreeningAvailable.ConsultFactory. ApplicationNotes: SFT10000DarlingtonTransistorisadirectreplacementofMotorolaMJ1000.Itisdesignedfo	SSDI SSDI
SFT10000-3	20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR Features: •BVCEO350Volts •LowSaturationVoltage •200oCOperatingTemperature •HermeticallySealed,IsolatedPackage •TX,TXV,S-LevelScreeningAvailable.ConsultFactory. ApplicationNotes: SFT10000DarlingtonTransistorisadirectreplacementofMotorolaMJ1000.Itisdesignedfo	SSDI SSDI
SFT1001	100AMP HIGH SPEED PNP TRANSISTOR 250 VOLTS 100AMPHIGHSPEEDPNPTRANSISTOR250VOLTS	SSDI SSDI
SFT1002	100 AMP HIGH SPEED NPN TRANSISTOR 250 VOLTS	SSDI SSDI
SFT1004	100 AMP HIGH SPEED NPN TRANSISTOR 250 VOLTS	SSDI SSDI
SFT1010	100 amp HIGH ENERGY NPN TRANSISTORS	SSDI SSDI
SFT1012	100 amp HIGH ENERGY NPN TRANSISTORS	SSDI SSDI
SFT1014	100 amp HIGH ENERGY NPN TRANSISTORS	SSDI SSDI
SFT1016	100 amp HIGH ENERGY NPN TRANSISTORS 350 VOLTS	SSDI SSDI
SFT1018	100 amp HIGH ENERGY NPN TRANSISTORS 350 VOLTS	SSDI SSDI
SFT1020	100 amp HIGH ENERGY NPN TRANSISTORS 350 VOLTS	SSDI SSDI
SFT1101	PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications PNPEpitaxialPlanarSiliconTransistor Features •AdoptionofFBET,MBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Highallowablepowerdissipation. Applications •DC/DCconverters,relaydrivers,lampdrivers,motor	SANYOSanyo 三洋三洋电机株式会社
SFT1102	PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications PNPEpitaxialPlanarSiliconTransistor Features •AdoptionofFBET,MBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Highallowablepowerdissipation. Applications •DC/DCconverters,relaydrivers,lampdrivers,motor	SANYOSanyo 三洋三洋电机株式会社
SFT1192/59	2 AMP 500 VOLTS PNP TRANSISTOR FEATURES: •BVCEO400V. •FastSwitching. •HighFrequency. •LowSaturationVoltage. •200oCOperating,GoldEutecticDieAttach. •DesignedforComplementaryUsewithSFT6800.	SSDI SSDI
SFT1192-59	2 AMP 500 VOLTS PNP TRANSISTOR FEATURES: •BVCEO400V. •FastSwitching. •HighFrequency. •LowSaturationVoltage. •200oCOperating,GoldEutecticDieAttach. •DesignedforComplementaryUsewithSFT6800.	SSDI SSDI
SFT1201	NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications High-VoltageSwitchingApplications Features •AdoptionofFBET,MBITprocess. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Highallowablepowerdissipation. Applications •DC/DCconverter,relaydrivers,lampdrivers,motordrivers	SANYOSanyo 三洋三洋电机株式会社
SFT1202	NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications High-VoltageSwitchingApplications Features •AdoptionofFBET,MBITprocess. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Highallowablepowerdissipation. Applications •DC/DCconverter,relaydrivers,lampdrivers,mot	SANYOSanyo 三洋三洋电机株式会社
SFT1202	Bipolar Transistor BipolarTransistor 150V,2A,LowVCE(sat),NPNSingleTP/TP-FA Features •AdoptionofFBET,MBITprocess •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Highallowablepowerdissipation Applications •DC/DCconverter,relaydrive	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1202	isc Silicon NPN Power Transistor DESCRIPTION •LowCollector-EmitterSaturationVoltage- :VCE(sat)=0.165V(Max)(IC=1A;IB=0.1A) •Fast-Switchingspeed •Highallowablepowerdissipation •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •DC/DCconverter •	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
SFT1202-E	Bipolar Transistor BipolarTransistor 150V,2A,LowVCE(sat),NPNSingleTP/TP-FA Features •AdoptionofFBET,MBITprocess •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Highallowablepowerdissipation Applications •DC/DCconverter,relaydrive	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1202-TL-E	Bipolar Transistor BipolarTransistor 150V,2A,LowVCE(sat),NPNSingleTP/TP-FA Features •AdoptionofFBET,MBITprocess •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Highallowablepowerdissipation Applications •DC/DCconverter,relaydrive	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1302	General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •Motordriveapplication. •LowON-resistance. •4Vdrive.	SANYOSanyo 三洋三洋电机株式会社
SFT1327	P-Channel Silicon MOSFET General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •4Vdrive.	SANYOSanyo 三洋三洋电机株式会社
SFT1341	General-Purpose Switching Device Applications Features •1.8Vdrive.	SANYOSanyo 三洋三洋电机株式会社
SFT1341	Single P-Channel Power MOSFET Features •LowOn-Resistance •HighSpeedSwitching •LowGateCharge •LowGateDriveVoltage •ESDDiode-ProtectedGate •Pb-freeandRoHSCompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1341-E	Single P-Channel Power MOSFET Features •LowOn-Resistance •HighSpeedSwitching •LowGateCharge •LowGateDriveVoltage •ESDDiode-ProtectedGate •Pb-freeandRoHSCompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1341-TL-E	Single P-Channel Power MOSFET Features •LowOn-Resistance •HighSpeedSwitching •LowGateCharge •LowGateDriveVoltage •ESDDiode-ProtectedGate •Pb-freeandRoHSCompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1341-TL-W	Single P-Channel Power MOSFET Features •LowOn-Resistance •HighSpeedSwitching •LowGateCharge •LowGateDriveVoltage •ESDDiode-ProtectedGate •Pb-freeandRoHSCompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1341-W	Single P-Channel Power MOSFET Features •LowOn-Resistance •HighSpeedSwitching •LowGateCharge •LowGateDriveVoltage •ESDDiode-ProtectedGate •Pb-freeandRoHSCompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1342	P-Channel Silicon MOSFET General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •Motordriveapplication. •4Vdrive.	SANYOSanyo 三洋三洋电机株式会社
SFT1342	Power MOSFET Features •LowOn-Resistance •HighSpeedSwitching •LowGateCharge •ESDDiode-ProtectedGate •Pb-freeandRoHSCompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1342	P-Channel Power MOSFET ??0V, ??2A, 62m, Single TP/TP-FA Features •LowOn-Resistance •HighSpeedSwitching •LowGateCharge •ESDDiode-ProtectedGate •Pb-freeandRoHSCompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1342-E	P-Channel Power MOSFET ??0V, ??2A, 62m, Single TP/TP-FA Features •LowOn-Resistance •HighSpeedSwitching •LowGateCharge •ESDDiode-ProtectedGate •Pb-freeandRoHSCompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1342-E	Power MOSFET Features •LowOn-Resistance •HighSpeedSwitching •LowGateCharge •ESDDiode-ProtectedGate •Pb-freeandRoHSCompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1342-TL-E	P-Channel Power MOSFET ??0V, ??2A, 62m, Single TP/TP-FA Features •LowOn-Resistance •HighSpeedSwitching •LowGateCharge •ESDDiode-ProtectedGate •Pb-freeandRoHSCompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1342-TL-E	Power MOSFET Features •LowOn-Resistance •HighSpeedSwitching •LowGateCharge •ESDDiode-ProtectedGate •Pb-freeandRoHSCompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1342-TL-W	Power MOSFET Features •LowOn-Resistance •HighSpeedSwitching •LowGateCharge •ESDDiode-ProtectedGate •Pb-freeandRoHSCompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1342-W	Power MOSFET Features •LowOn-Resistance •HighSpeedSwitching •LowGateCharge •ESDDiode-ProtectedGate •Pb-freeandRoHSCompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1345	Power MOSFET PowerMOSFET –100V,–11A,275mΩ,P-ChannelSingleTP/TP-FA Features •ON-resistanceRDS(on)1=210mΩ(typ.) •InputCapacitanceCiss=1020pF(typ.) •4Vdrive •Halogenfreecompliance •Protectiondiodein	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1345	Power MOSFET 100V, 11A, 275m, P-Channel Single TP/TP-FA PowerMOSFET –100V,–11A,275mΩ,P-ChannelSingleTP/TP-FA Features •ON-resistanceRDS(on)1=210mΩ(typ.) •InputCapacitanceCiss=1020pF(typ.) •4Vdrive •Halogenfreecompliance •Protectiondiodein	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1345-H	Power MOSFET PowerMOSFET –100V,–11A,275mΩ,P-ChannelSingleTP/TP-FA Features •ON-resistanceRDS(on)1=210mΩ(typ.) •InputCapacitanceCiss=1020pF(typ.) •4Vdrive •Halogenfreecompliance •Protectiondiodein	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1345-H	Power MOSFET 100V, 11A, 275m, P-Channel Single TP/TP-FA PowerMOSFET –100V,–11A,275mΩ,P-ChannelSingleTP/TP-FA Features •ON-resistanceRDS(on)1=210mΩ(typ.) •InputCapacitanceCiss=1020pF(typ.) •4Vdrive •Halogenfreecompliance •Protectiondiodein	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1345-TL-H	Power MOSFET PowerMOSFET –100V,–11A,275mΩ,P-ChannelSingleTP/TP-FA Features •ON-resistanceRDS(on)1=210mΩ(typ.) •InputCapacitanceCiss=1020pF(typ.) •4Vdrive •Halogenfreecompliance •Protectiondiodein	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1345-TL-H	Power MOSFET 100V, 11A, 275m, P-Channel Single TP/TP-FA PowerMOSFET –100V,–11A,275mΩ,P-ChannelSingleTP/TP-FA Features •ON-resistanceRDS(on)1=210mΩ(typ.) •InputCapacitanceCiss=1020pF(typ.) •4Vdrive •Halogenfreecompliance •Protectiondiodein	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1350	General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •ON-resistanceRDS(on)1=45mΩ(typ.) •InputCapacitanceCiss=590pF(typ.) •4.5Vdrive •Halogenfreecompliance	SANYOSanyo 三洋三洋电机株式会社
SFT1350	P-Channel Power MOSFET 40V, 19A, 59m, Single TP/TP-FA Features •ON-resistanceRDS(on)1=45mΩ(typ.) •InputCapacitanceCiss=590pF(typ.) •4.5Vdrive •Halogenfreecompliance •Protectiondiodein	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1350-H	P-Channel Power MOSFET 40V, 19A, 59m, Single TP/TP-FA Features •ON-resistanceRDS(on)1=45mΩ(typ.) •InputCapacitanceCiss=590pF(typ.) •4.5Vdrive •Halogenfreecompliance •Protectiondiodein	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1350-TL-H	P-Channel Power MOSFET 40V, 19A, 59m, Single TP/TP-FA Features •ON-resistanceRDS(on)1=45mΩ(typ.) •InputCapacitanceCiss=590pF(typ.) •4.5Vdrive •Halogenfreecompliance •Protectiondiodein	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1402	N-Channel Silicon MOSFET General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •Motordriveapplication. •LowON-resistance. •4Vdrive.	SANYOSanyo 三洋三洋电机株式会社
SFT1403	N-Channel Silicon MOSFET General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •Motordriveapplication. •LowON-resistance. •4Vdrive.	SANYOSanyo 三洋三洋电机株式会社
SFT1405	N-Channel Silicon MOSFET General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •Motordriveapplication. •LowON-resistance. •4Vdrive.	SANYOSanyo 三洋三洋电机株式会社
SFT1407	N-Channel Silicon MOSFET General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •Motordriveapplication. •LowON-resistance. •4Vdrive.	SANYOSanyo 三洋三洋电机株式会社
SFT1423	General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •4Vdrive.	SANYOSanyo 三洋三洋电机株式会社
SFT1423	N-Channel Power MOSFET 500V, 2A, 4.9, Single TP/TP-FA N-ChannelPowerMOSFET 500V,2A,4.9Ω,SingleTP/TP-FA Features •ON-resistance •Protectiondiodein •4Vdrive	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1423-TL-E	N-Channel Power MOSFET 500V, 2A, 4.9, Single TP/TP-FA N-ChannelPowerMOSFET 500V,2A,4.9Ω,SingleTP/TP-FA Features •ON-resistance •Protectiondiodein •4Vdrive	ONSEMION Semiconductor 安森美半导体安森美半导体公司
SFT1427	N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •4Vdrive.	SANYOSanyo 三洋三洋电机株式会社
SFT1431	General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •Motordriveapplication. •LowON-resistance. •4Vdrive.	SANYOSanyo 三洋三洋电机株式会社

SFT1产品属性

类型
描述
型号
SFT1
制造商
SYNSEMI
制造商全称
SYNSEMI
功能描述
SUPER FAST RECTIFIER DIODES

SFT1供应商更多...

更新时间：2024-5-17 18:22:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市纳立科技有限公司	SFT1101-TL-E		三年内		1983	纳立只做原装正品13590203865	询价
深圳市科恒伟业电子有限公司	SFT1202-TL-E	ON/安森美	22+	SOT-252	9850	只做原装正品假一赔十!正规渠道订货!	询价
深圳市亚泰盈科电子有限公司	SFT1350-TL-H	ON		SOT-252	30216	提供BOM表配单TEL:0755-83759919QQ:2355705587杜S	询价
深圳市跃创芯科技有限公司	SFT1101	SANYO/三洋	22+	SOT252	25000	只做原装进口现货,专注配单	询价
深圳市得捷芯城科技有限公司	SFT1446-TL-H	ON/安森美	23+	TO252	15516	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市高捷芯城科技有限公司	SFT1202-TL-E	onsemi(安森美)	23+	TO-252	1400	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市富利微电子科技有限公司	SFT1443-TL-E	ON/安森美	23+	TO-252	33500	全新进口原装现货,假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	SF-T10-30-PF	TDK/东电化		SMD	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市汇莱威科技有限公司	SFT1423-S-TL-E	进口SANYO		TO252	7906200		询价
深圳市博浩通科技有限公司	SF-T10-30-PF	TDK	23+	SMD	8820	全新原装优势	询价

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SFT1数据表相关新闻

SFR10EZPF5103
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SFV8R-3STBE1HLF
优势渠道
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SFXG50UZ502深圳市光华微科技有限公司18138231376
联系人：刘冬英公司电话：0755-83203002 手机：18138231376 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司公司地址：深圳市福田区振兴路华匀大厦1栋712室
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SG1503T-精密2.5伏参考...
描述这种单片集成电路是一个完全独立的精密电压参考发生器，内部装饰为±1％的准确度。需要较少比静态电流为2mA，这种装置可以提供10mA的过剩的总负载和线路引起的误差小于0.5％。另外本计画为电压精度，实现了内部修整温度系数的输出电压通常为10ppm的/°C的因此，这些提法应用关键仪器和D很好的选择到一个转换器系统。该SG1503规定工作在整个军事环境温度范围-55°C至125°C，而在SG2503是专为-25°C至85°C和0℃的商业应用SG3503至70℃特征·输出电压调整到±1％·输入电压范围
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SFT1晶体管资料

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SFT1芯片相关品牌

SFT1规格书下载地址

SFT1参数引脚图相关

SFT1数据表相关新闻

SFR10EZPF5103

SFV8R-3STBE1HLF

SFR9230BTM

SFSD016GN3PM1TO-I-LF-010-SW3

SFXG50UZ502深圳市光华微科技有限公司18138231376

SG1503T-精密2.5伏参考...

DdatasheetPDF页码索引