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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SD603C | FASTRECOVERYDIODESHockeyPukVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2200V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Press-pukencapsulation ■Casestyleconfo | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
FASTRECOVERYDIODESHockeyPukVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2200V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Press-pukencapsulation ■Casestyleconfo | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 |  | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
FASTRECOVERYDIODESHockeyPukVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2200V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Press-pukencapsulation ■Casestyleconfo | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
FASTRECOVERYDIODESHockeyPukVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2200V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Press-pukencapsulation ■Casestyleconfo | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
FASTRECOVERYDIODESHockeyPukVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2200V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Press-pukencapsulation ■Casestyleconfo | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
FASTRECOVERYDIODESHockeyPukVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2200V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Press-pukencapsulation ■Casestyleconfo | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
FASTRECOVERYDIODESHockeyPukVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2200V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Press-pukencapsulation ■Casestyleconfo | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
FASTRECOVERYDIODESHockeyPukVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2200V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Press-pukencapsulation ■Casestyleconfo | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
FASTRECOVERYDIODESHockeyPukVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2200V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Press-pukencapsulation ■Casestyleconfo | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SD603C04S10C FEATURES •HighpowerFASTrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2200V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •PressPUKencapsulation •Casestyleconf | VishayVishay Siliconix 威世科技 | | | |
FastRecoveryDiodes(HockeyPUKVersion),600A 文件：443.52 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
FastRecoveryDiodes(HockeyPUKVersion),600A 文件：443.52 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
FastRecoveryDiodes(HockeyPUKVersion),600A 文件：443.52 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
FastRecoveryDiodes(HockeyPUKVersion),600A 文件：443.52 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
FastRecoveryDiodes(HockeyPUKVersion),600A 文件：443.52 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
FastRecoveryDiodes(HockeyPUKVersion),600A 文件：443.52 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
FastRecoveryDiodes(HockeyPUKVersion),600A 文件：443.52 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
FastRecoveryDiodes(HockeyPUKVersion),600A 文件：443.52 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
FastRecoveryDiodes(HockeyPUKVersion),600A 文件：443.52 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
2Aand5A/50Vdcand5A/250VdcDCSolid-StateRelays 文件：518.44 Kbytes Page：3 Pages | WILLOW Willow Technologies Ltd |  | | |
횠5.0mmmountingRobustbrightnickelplatedbrasshousing 文件：464.15 Kbytes Page：4 Pages | MARL Marl International Ltd |  | | |
FilterAdapter603 文件：126.56 Kbytes Page：2 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 |  | | |
TwoTerminalMetalElementCurrentSense 文件：119.98 Kbytes Page：1 Pages | OHMITE OHMITE MANUFACTURING COMPANY |  | | |
TwoTerminalMetalElementCurrentSense 文件：119.98 Kbytes Page：1 Pages | OHMITE OHMITE MANUFACTURING COMPANY | | |
SD603C产品属性
- 类型
描述
- 型号
SD603C
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
FAST RECOVERY DIODES Hockey Puk Version
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR-国际整流器 |
24+25+/26+27+ |
车规-模块MODULE |
1880 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IR |
23+ |
MODULE |
1000 |
全新原装现货 |
|||
VISHAY/威世 |
B-43(E-Puk) |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
IR |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
IR |
16+ |
MODULE |
2100 |
公司大量全新现货 随时可以发货 |
|||
IR |
22+ |
E-PUK |
6000 |
终端可免费供样,支持BOM配单 |
|||
isc |
2024 |
E-PUK,B-43 |
5000 |
国产品牌isc,可替代原装 |
|||
IR |
19+ |
MODULE |
500 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
SD603C芯片相关品牌
SD603C规格书下载地址
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