NPNTripleDiffusedPlanarSiliconTransistor

ForSwitchingRegulatorUse ◆Highreversevoltage:800Vmin. ◆Highspeedswitchinguse. ◆WideASO.

TRANSISTOR(UHF~CBANDLOWNOISEAMPLIFIERAPPLICATIONS)

UHF~CBandLowNoiseAmplifierApplications •Lownoisefigure •NF=2.5dB,|S21e|2=14.5dB(f=500MHz) •NF=3.0dB,|S21e|2=9.0dB(f=1GHz)

ForSwitchingRegulators

ForSwitchingRegulators Features •Highbreakdownvoltage(VCBO≥800V). •Fastswitchingspee. •WideASO.

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Fastswitchingspeed. •Wideareaofsafeoperation APPLICATIONS •500V/7Aswitchingregulatorapplications

2SC3094

2SC3094

TRANSISTOR(VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications •Lownoisefigure •NF=1.7dB,|S21e|2=15dB(f=500MHz) •NF=2.5dB,|S21e|2=9.5dB(f=1GHz)

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highbreakdownvoltage(VCBO800V) ·Fastswitchingspeed ·WideASO
SafeOperatingArea
APPLICATIONS ·500V/10ASwitchingRegulatorApplications

SiliconNPNPowerTransistors

文件：125.43 Kbytes Page：3 Pages

SCHOTTKYRECTIFIER

175℃TJoperation Centertapmodule Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Lowforwardvoltagedrop Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability Baseplate:Nickelplated;Terminals

SCHOTTKYRECTIFIER

175℃TJoperation Centertapmodule Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Lowforwardvoltagedrop Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability Baseplate:Nickelplated;Terminals

MeasureEarthResistance(20/200/2000廓ranges)

文件：122.87 Kbytes Page：1 Pages

Guardringforenhancedruggednessandlongtermreliability

文件：164.92 Kbytes Page：4 Pages

Guardringforenhancedruggednessandlongtermreliability

文件：163.79 Kbytes Page：4 Pages