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RN142晶体管资料
RN1421别名:RN1421三极管、RN1421晶体管、RN1421晶体三极管
RN1421生产厂家:日本东芝公司
RN1421制作材料:Si-N+R
RN1421性质:表面帖装型 (SMD)
RN1421封装形式:贴片封装
RN1421极限工作电压:50V
RN1421最大电流允许值:0.8A
RN1421最大工作频率:<1MHZ或未知
RN1421引脚数:3
RN1421最大耗散功率:0.3W
RN1421放大倍数:
RN1421图片代号:H-15
RN1421vtest:50
RN1421htest:999900
- RN1421atest:.8
RN1421wtest:.3
RN1421代换 RN1421用什么型号代替:
RN142价格
参考价格:¥16.4449
型号:RN142-0.5-02 品牌:Schaffner 备注:这里有RN142多少钱,2024年最近7天走势,今日出价,今日竞价,RN142批发/采购报价,RN142行情走势销售排行榜,RN142报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
RN142 | Current-compensatedChokes 文件:691.54 Kbytes Page:5 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •Highcurrenttype(IC(max)=800mA) •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •LowVCE(sat) •ComplementarytoRN2401~RN2406 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •Highcurrenttype(IC(max)=800mA) •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •LowVCE(sat) •ComplementarytoRN2401~RN2406 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •Highcurrenttype(IC(max)=800mA) •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •LowVCE(sat) •ComplementarytoRN2401~RN2406 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •Highcurrenttype(IC(max)=800mA) •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •LowVCE(sat) •ComplementarytoRN2401~RN2406 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •Highcurrenttype(IC(max)=800mA) •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •LowVCE(sat) •ComplementarytoRN2401~RN2406 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •Highcurrenttype(IC(max)=800mA) •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •LowVCE(sat) •ComplementarytoRN2401~RN2406 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •Highcurrenttype(IC(max)=800mA) •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •LowVCE(sat) •ComplementarytoRN2401~RN2406 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
Current-compensatedChokes 文件:691.54 Kbytes Page:5 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Current-compensatedChokes 文件:1.3454 Mbytes Page:9 Pages | SCHAFFNERSchaffner International Ltd 夏弗纳上海夏弗纳国际贸易有限公司 | |||
封装/外壳:水平式,4 PC 引脚 包装:托盘 描述:CMC 82MH 500MA 2LN TH 滤波器 共模扼流圈 | Schaffner EMC Inc. Schaffner EMC Inc. | |||
SiliconNPNEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications 文件:547.59 Kbytes Page:8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
封装/外壳:水平式,4 PC 引脚 包装:管件 描述:CMC 27MH 1.4A 2LN TH 滤波器 共模扼流圈 | Schaffner EMC Inc. Schaffner EMC Inc. | |||
Current-compensatedChokes 文件:691.54 Kbytes Page:5 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Current-compensatedChokes 文件:1.3454 Mbytes Page:9 Pages | SCHAFFNERSchaffner International Ltd 夏弗纳上海夏弗纳国际贸易有限公司 | |||
SiliconNPNEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications 文件:547.59 Kbytes Page:8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
Current-compensatedChokes 文件:691.54 Kbytes Page:5 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Current-compensatedChokes 文件:1.3454 Mbytes Page:9 Pages | SCHAFFNERSchaffner International Ltd 夏弗纳上海夏弗纳国际贸易有限公司 | |||
SiliconNPNEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications 文件:547.59 Kbytes Page:8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
Current-compensatedChokes 文件:691.54 Kbytes Page:5 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Current-compensatedChokes 文件:1.3454 Mbytes Page:9 Pages | SCHAFFNERSchaffner International Ltd 夏弗纳上海夏弗纳国际贸易有限公司 | |||
SiliconNPNEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications 文件:547.59 Kbytes Page:8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNPNEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications 文件:547.59 Kbytes Page:8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
Current-compensatedChokes 文件:691.54 Kbytes Page:5 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Current-compensatedChokes 文件:1.3454 Mbytes Page:9 Pages | SCHAFFNERSchaffner International Ltd 夏弗纳上海夏弗纳国际贸易有限公司 | |||
SiliconNPNEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications 文件:547.59 Kbytes Page:8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNPNEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications 文件:547.59 Kbytes Page:8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
Current-compensatedChokes 文件:691.54 Kbytes Page:5 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Current-compensatedChokes 文件:700.09 Kbytes Page:6 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Current-compensatedChokes 文件:1.3454 Mbytes Page:9 Pages | SCHAFFNERSchaffner International Ltd 夏弗纳上海夏弗纳国际贸易有限公司 | |||
SiliconNPNEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications 文件:547.59 Kbytes Page:8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
PINdiode 文件:43.36 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINdiode 文件:141.07 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINdiode 文件:114.49 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiodes 文件:1.41898 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINdiode 文件:141.07 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiodes 文件:1.41898 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINdiode 文件:789.62 Kbytes Page:6 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINdiode 文件:114.49 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINdiode 文件:43.72 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINdiode 文件:1.03904 Mbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiodes 文件:1.43335 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINdiode 文件:1.03904 Mbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiodes 文件:1.43335 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiodes 文件:1.3891 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINdiode 文件:375.5 Kbytes Page:5 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINdiode 文件:270.54 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiodes 文件:1.44505 Mbytes Page:7 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINdiode 文件:277.11 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiodes 文件:1.41477 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiode 文件:81.72 Kbytes Page:2 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiode 文件:121.59 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiode 文件:121.59 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiodes 文件:1.41477 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiode 文件:151.96 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiodes 文件:1.46391 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiodes 文件:1.46391 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiodes 文件:1.41666 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiode 文件:132.48 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PINDiodes 文件:1.41666 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |
RN142产品属性
- 类型
描述
- 型号
RN142
- 功能描述
Current-compensated Chokes
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
22++ |
SOT23-3 |
5209 |
原装正品!诚信经营,实单价优! |
|||
TOSHIBA |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
ROHM |
21+ |
DFN1608-8 |
21000 |
一级代理进口原装!长期供应!绝对优势价格(诚信经营 |
|||
TOSHIBA |
15+ |
SOT-23 |
6698 |
||||
ROHM(罗姆) |
22+ |
N/A |
15718 |
全新原装 |
|||
TOSHIBA/东芝 |
2023+ |
SOT-23 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
ROHM |
21+ |
SOD882 |
50000 |
全新原装正品现货,支持订货 |
|||
ROHM |
22+ |
SOD523 |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
23+ |
N/A |
65210 |
正品授权货源可靠 |
||||
TOSHIBA/东芝 |
23+ |
SOT-23 |
2000 |
全新原装深圳仓库现货有单必成 |
RN142规格书下载地址
RN142参数引脚图相关
- sa950
- sa28
- s9018
- s9015
- s9014
- s9013
- s8550
- s8050三极管
- s8050
- s7-200
- s7200
- s5230
- s510b
- s1100
- s101
- s007
- rtl8100c
- rs触发器
- rohs指令
- ROHS
- RN1509
- RN1508
- RN1507
- RN1506
- RN1505
- RN1504
- RN1503
- RN1502
- RN1501
- RN1444
- RN1443
- RN1442
- RN1441
- RN143
- RN142ZS
- RN142V
- RN142S
- RN142G
- RN1427
- RN1426
- RN1425
- RN1424
- RN1423
- RN1422
- RN1421
- RN141TS
- RN141TG
- RN141S
- RN141G
- RN1418
- RN1417
- RN1416
- RN1415
- RN1414
- RN1413
- RN1412
- RN1411
- RN1410
- RN1409
- RN1408
- RN1407
- RN1406
- RN1405
- RN1404
- RN1403
- RN1402
- RN1401
- RN1313
- RN1312
- RN1311
- RN1310
- RN1309
- RN1308
- RN1307
RN142数据表相关新闻
RN1723-I/RM100
RN1723-I/RM100
2023-3-27RMLV0408EGSB-4S2 静态随机存取存储器 SRAM 存储器 IC 4Mb(512K x 8)
RMLV0408EGSB-4S2
2022-4-27RMLV0408EGSB-4S2 静态随机存取存储器 静态随机存取存储器 4MB 3V X8 TSOP32 45NS -40TO85C
原厂原装正品现货价格优势有单必成
2022-4-24RN 1/4W 1K F T/B A1
属性参数值 商品目录金属膜电阻 阻值(欧姆)1K 精度±1%_ 安装类型通孔 功率1/4W 温度系数±50ppm/°C属性参数值 商品目录金属膜电阻 阻值(欧姆)1K 精度±1%_ 安装类型通孔 功率1/4W 温度系数±50ppm/°C
2020-12-4RN2706JE
类别分立半导体产品 晶体管-双极(BJT)-阵列-预偏置 制造商ToshibaSemiconductorand_Storage 系列- 包装带卷(TR) 零件状态有源 晶体管类型2PNP-预偏压(双)(耦合发射器) 电流-集电极(Ic)(最大值)100mA 电压-集射极击穿(最大值)50V 电阻器-基极(R1)4.7千欧 电阻
2020-10-15RN171-I/RM原装MicrochipWiFi模块
只做原装,假一罚十,可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-3-14
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