RFM1价格

参考价格:¥41.6763

型号:RFM12U7X(TE12L,Q) 品牌:Toshiba 备注:这里有RFM1多少钱,2024年最近7天走势,今日出价,今日竞价,RFM1批发/采购报价,RFM1行情走势销售排行榜,RFM1报价。
型号 功能描述 生产厂家&企业 LOGO 操作

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESSGE Solid State

GE Solid State

GESS

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESSGE Solid State

GE Solid State

GESS

10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-ChannelEnhancement-ModePowerField-EffectTransistors Features: ■SOAispower-dissipationlimited ■Nanosecondeswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESSGE Solid State

GE Solid State

GESS

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-ChannelEnhancement-ModePowerField-EffectTransistors Features: ■SOAispower-dissipationlimited ■Nanosecondeswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESSGE Solid State

GE Solid State

GESS

12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedriv

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

N-Channel Enhancement Mode Power Field Effect Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedriv

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

N-Channel Enhancement Mode Power Field Effect Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

POWER LOGIC LEVEL MOSFETS

[GESOLIDSTATE] POWERLOGICLEVELMOSFETS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

POWER LOGIC LEVEL MOSFETS

[GESOLIDSTATE] POWERLOGICLEVELMOSFETS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

POWER LOGIC LEVEL MOSFETS

[GESOLIDSTATE] POWERLOGICLEVELMOSFETS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

包装:散装 描述:DAILY FACE MASK REUSABLE 工具 个人防护装备(PPE)

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

3M

包装:散装 描述:3M DAILY FACE MASK REUSABLE RFM1 工具 个人防护装备(PPE)

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

3M

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件:89.46 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件:89.46 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件:89.46 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件:89.46 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

Embedded EEPROM

文件:682.57 Kbytes Page:18 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

Low-Cost Consumer Electronics Applications

文件:611.68 Kbytes Page:22 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Low-Cost Consumer Electronics Applications

文件:611.68 Kbytes Page:22 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Low-Cost Consumer Electronics Applications

文件:606.91 Kbytes Page:21 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Low-Cost Consumer Electronics Applications

文件:606.91 Kbytes Page:21 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Embedded EEPROM

文件:682.57 Kbytes Page:18 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

Low-Cost Consumer Electronics Applications

文件:611.68 Kbytes Page:22 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Low-Cost Consumer Electronics Applications

文件:611.68 Kbytes Page:22 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

High Performance RF Transmitter Module

文件:246.54 Kbytes Page:5 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

High Performance RF Transmitter Module

文件:246.54 Kbytes Page:5 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

High Performance RF Transmitter Module

文件:246.54 Kbytes Page:5 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

High Performance RF Transmitter Module

文件:246.54 Kbytes Page:5 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

High Performance RF Transmitter Module

文件:246.54 Kbytes Page:5 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

Embedded EEPROM

文件:763.84 Kbytes Page:19 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

Low-Cost Consumer Electronics Applications

文件:763.84 Kbytes Page:19 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Embedded EEPROM

文件:763.84 Kbytes Page:19 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

Embedded EEPROM

文件:763.84 Kbytes Page:19 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

Low-Cost Consumer Electronics Applications

文件:763.84 Kbytes Page:19 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Embedded EEPROM

文件:763.84 Kbytes Page:19 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

Universal ISM Band FSK Transceiver

文件:1.53637 Mbytes Page:41 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Universal ISM Band FSK Transceiver

文件:1.53637 Mbytes Page:41 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Universal ISM Band FSK Transceiver

文件:1.53637 Mbytes Page:41 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Universal ISM Band FSK Transceiver

文件:1.53637 Mbytes Page:41 Pages

HOPEHOPE Microelectronics CO., Ltd.

希望微深圳市希望微电子有限公司

HOPE

RFM1产品属性

  • 类型

    描述

  • 型号

    RFM1

  • 制造商

    GESS

  • 制造商全称

    GESS

  • 功能描述

    N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

更新时间:2024-5-17 8:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HAR
1116+
DC90PACKAGET
6869
绝对原装现货
HARRIS(哈利斯)
23+
TO3
6000
MOSPEC
2023+
TO-3
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
INTERSIL
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
HARRIS
2020+
N/A
174
百分百原装正品 真实公司现货库存 本公司只做原装 可
HARRIS(哈利斯)
20+
TO-3
3000
HARRIS/哈里斯
2046+
9852
只做原装正品现货!或订货假一赔十!
HARRIS
23+
TO-3
4500
全新原装、诚信经营、公司现货销售!
MOSPEC
21+
TO-3
35210
一级代理/放心采购
MOSPEC
1635+
92
6000
好渠道!好价格!一片起卖!

RFM1芯片相关品牌

  • ALLIED
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  • etc2
  • HARTING
  • Littelfuse
  • MERITEK
  • MOLEX1
  • NSC
  • RALTRON
  • SUMIDA
  • TEC

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