RFM价格

参考价格:¥10.7230

型号:RFM01U7P(TE12L,F) 品牌:Toshiba 备注:这里有RFM多少钱,2024年最近7天走势,今日出价,今日竞价,RFM批发/采购报价,RFM行情走势销售排行榜,RFM报价。
型号 功能描述 生产厂家&企业 LOGO 操作
RFM

Non-Inductive High Frequency Melf Resistors

文件:439.19 Kbytes Page:5 Pages

TOKENToken Electronics Industry Co., Ltd.

德通电子德通电子工业有限公司

TOKEN
RFM

1 Watt SIP4 Single Output

文件:444.2 Kbytes Page:4 Pages

RECOMRecom International Power

瑞科电源瑞科电源有限公司

RECOM

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Field Effect Transistor Silicon N Channel MOS Type

VHF-andUHF-bandAmplifierApplications (Note)TheTOSHIBAproductslistedinthisdocumentareintendedforhigh frequencyPowerAmplifieroftelecommunicationsequipment..These TOSHIBAproductsareneitherintendednorwarrantedforanyotheruse. DonotusetheseTOSHIBAproductslistedi

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

VHF-andUHF-bandAmplifierApplications (Note)TheTOSHIBAproductslistedinthisdocumentareintendedforhighfrequencyPowerAmplifieroftelecommunicationsequipment.TheseTOSHIBAproductsareneitherintendednorwarrantedforanyotheruse.DonotusetheseTOSHIBAproductslistedinthi

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESSGE Solid State

GE Solid State

GESS

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESSGE Solid State

GE Solid State

GESS

10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-ChannelEnhancement-ModePowerField-EffectTransistors Features: ■SOAispower-dissipationlimited ■Nanosecondeswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESSGE Solid State

GE Solid State

GESS

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-ChannelEnhancement-ModePowerField-EffectTransistors Features: ■SOAispower-dissipationlimited ■Nanosecondeswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESSGE Solid State

GE Solid State

GESS

12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedriv

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

N-Channel Enhancement Mode Power Field Effect Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedriv

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

N-Channel Enhancement Mode Power Field Effect Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

POWER LOGIC LEVEL MOSFETS

[GESOLIDSTATE] POWERLOGICLEVELMOSFETS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

POWER LOGIC LEVEL MOSFETS

[GESOLIDSTATE] POWERLOGICLEVELMOSFETS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

POWER LOGIC LEVEL MOSFETS

[GESOLIDSTATE] POWERLOGICLEVELMOSFETS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

RFM SERIES

FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc...

SUNHOLDShanghe Motor Co. , Ltd.

上和电机上和电机股份有限公司

SUNHOLD

3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

TheseareN-channelenhancement-modesilicon-gatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drivepower.These

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

TheseareN-channelenhancement-modesilicon-gatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drivepower.These

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedand

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS

[GESOLIDSTATE]

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS

[GESOLIDSTATE]

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

RFM产品属性

  • 类型

    描述

  • 型号

    RFM

  • 制造商

    Amphenol PCD

  • 功能描述

    INSERTION TOOL - Bulk

更新时间:2024-5-21 8:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
16+
SOD-89
16000
原装现货假一罚十
Qorvo
19+
标准封装
2500
RECOM
21+
NA
7175
只做原装,假一罚十
TOSHIBA
09+
SOT-343/USQ
2995
只做原装,也只有原装!
RFMD
21+
VQFN
9800
只做原装正品假一赔十!正规渠道订货!
TOSHIBA/东芝
23+
SOT-343
54258
全新原厂原装正品现货,可提供技术支持、样品免费!
JST
22+
N/A
13000
代理渠道
RECOM
24+
SIP
15000
电源模块
RFMD
2020+
QFN
5500
原装现货/假一罚十/可开增票
RF
SO-10
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S

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  • RECOM
  • SIEMENS
  • WILLOW

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