您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第10762页 > RF5

RF5价格

参考价格：￥112.2712

型号：RF500 品牌：Hubbell 备注：这里有RF5多少钱，2024年最近7天走势，今日出价，今日竞价，RF5批发/采购报价，RF5行情走势销售排行榜，RF5报价。
型号 功能描述 生产厂家&企业 LOGO 操作
RF5

Series, High Frequency Power Resistors Thick film,Non-Inductive

WillowofferstheRFseriestomeetgeneralsetofrequirementsNON-INDUCTIVEhighfrequency,satisfywithanhighpowerandNon-inductivespecifcationatEconomicPrice. SeriesRFPrecisionPowerResistor,Non-Inductive HighFrequency NonInductivePerformence Fullpowerandvariou

WILLOWWillow Technologies Ltd

柳树科技柳树科技有限公司

WILLOW
RF50

Series, High Frequency Power Resistors Thick film,Non-Inductive

WillowofferstheRFseriestomeetgeneralsetofrequirementsNON-INDUCTIVEhighfrequency,satisfywithanhighpowerandNon-inductivespecifcationatEconomicPrice. SeriesRFPrecisionPowerResistor,Non-Inductive HighFrequency NonInductivePerformence Fullpowerandvariou

WILLOWWillow Technologies Ltd

柳树科技柳树科技有限公司

WILLOW
RF501B2S

Fast recovery Diodes (Silicon Epitaxial Planar)

Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
RF501B2S

Fast recovery diode (Silicon epitaxial planer)

Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
RF501BGE2S

Super Fast Recovery Diode

Application Generalrectification Features 1)Lowswitchingloss 2)Lowforwardvoltage

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
RF505B6S

Super Fast Recovery Diode

Series StandardFastRecovery Applications Generalrectification Features 1)Powermoldtype.(CPD) 2)Highswitchingspeed 3)LowReversecurrent Construction Siliconepitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
RF505TF6S

Fast Recovery Diodes

Series StandardFastRecovery Applications Generalrectification Features 1)Powermoldtype.(CPD) 2)Highswitchingspeed 3)LowReversecurrent Construction Siliconepitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
RF5110

3V GSM POWER AMPLIFIER

ProductDescription TheRF5110isahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMORGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinGSMhand-helddigitalcellularequ

RFMD

RF Micro Devices

RFMD
RF5110G

3V GSM POWER AMPLIFIER

ProductDescription TheRF5110Gisahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMORGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinGSMhand-helddigitalcellulareq

RFMD

RF Micro Devices

RFMD
RF5110GPCBA-410

3V GSM POWER AMPLIFIER

ProductDescription TheRF5110Gisahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMORGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinGSMhand-helddigitalcellulareq

RFMD

RF Micro Devices

RFMD
RF5110PCBA

3V GSM POWER AMPLIFIER

ProductDescription TheRF5110isahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMORGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinGSMhand-helddigitalcellularequ

RFMD

RF Micro Devices

RFMD
RF5111

3V DCS POWER AMPLIFIER

ProductDescription TheRF5111isahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMorGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinDCS1800/1900handhelddigitalcell

RFMD

RF Micro Devices

RFMD
RF5111PCBA-41X

3V DCS POWER AMPLIFIER

ProductDescription TheRF5111isahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMorGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinDCS1800/1900handhelddigitalcell

RFMD

RF Micro Devices

RFMD
RF5117

3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5117isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransi

RFMD

RF Micro Devices

RFMD
RF5117C

3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5117Cisalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTrans

RFMD

RF Micro Devices

RFMD
RF5117CPCBA

3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5117Cisalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTrans

RFMD

RF Micro Devices

RFMD
RF5117PCBA

3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5117isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransi

RFMD

RF Micro Devices

RFMD
RF5122

3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5122isalinear,medium-power,high-efficiency,two-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojuncti

RFMD

RF Micro Devices

RFMD
RF5125

3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5125isalinear,medium-power,high-efficiency,two-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojuncti

RFMD

RF Micro Devices

RFMD
RF5125PCBA-41X

3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5125isalinear,medium-power,high-efficiency,two-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojuncti

RFMD

RF Micro Devices

RFMD
RF5144

DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE

ProductDescription TheRF5144isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VIS-95/CDMA20001X/AMPShand

RFMD

RF Micro Devices

RFMD
RF5144PCBA-410

DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE

ProductDescription TheRF5144isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VIS-95/CDMA20001X/AMPShand

RFMD

RF Micro Devices

RFMD
RF5146

QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

ProductDescription TheRF5146isahigh-power,high-efficiencypoweramplifiermodulewithintegratedpowercontrolthatprovidesover50dBofcontrolrange.Thedeviceisaself-contained7mmx7mmx0.9mmleadframemodule(LFM)with50Ωinputandoutputterminals.Thedeviceisdesignedforuse

RFMD

RF Micro Devices

RFMD
RF5146PCBA-41X

QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

ProductDescription TheRF5146isahigh-power,high-efficiencypoweramplifiermodulewithintegratedpowercontrolthatprovidesover50dBofcontrolrange.Thedeviceisaself-contained7mmx7mmx0.9mmleadframemodule(LFM)with50Ωinputandoutputterminals.Thedeviceisdesignedforuse

RFMD

RF Micro Devices

RFMD
RF5146SB

QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

ProductDescription TheRF5146isahigh-power,high-efficiencypoweramplifiermodulewithintegratedpowercontrolthatprovidesover50dBofcontrolrange.Thedeviceisaself-contained7mmx7mmx0.9mmleadframemodule(LFM)with50Ωinputandoutputterminals.Thedeviceisdesignedforuse

RFMD

RF Micro Devices

RFMD
RF5152

3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5152isalinear,medium-power,high-efficiency,three-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojunc

RFMD

RF Micro Devices

RFMD
RF5152PCBA-41X

3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5152isalinear,medium-power,high-efficiency,three-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojunc

RFMD

RF Micro Devices

RFMD
RF5163

3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER

ProductDescription TheRF5163isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFampli

RFMD

RF Micro Devices

RFMD
RF5163L

3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER

ProductDescription TheRF5163isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFampli

RFMD

RF Micro Devices

RFMD
RF5163PCBA-41X

3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER

ProductDescription TheRF5163isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFampli

RFMD

RF Micro Devices

RFMD
RF5163PCBA-WD

3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER

ProductDescription TheRF5163isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFampli

RFMD

RF Micro Devices

RFMD
RF5176

3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER

ProductDescription TheRF5176isahigh-power,high-efficiencylinearamplifierICtargeting3Vhandheldsystems.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin3VCDMA-2000

RFMD

RF Micro Devices

RFMD
RF5176PCBA

3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER

ProductDescription TheRF5176isahigh-power,high-efficiencylinearamplifierICtargeting3Vhandheldsystems.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin3VCDMA-2000

RFMD

RF Micro Devices

RFMD
RF5184

DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE

ProductDescription TheRF5184isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierinW-CDMAhandhelddigitalcellu

RFMD

RF Micro Devices

RFMD
RF5184PCBA-410

DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE

ProductDescription TheRF5184isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierinW-CDMAhandhelddigitalcellu

RFMD

RF Micro Devices

RFMD
RF5187

LOW POWER LINEAR AMPLIFIER

ProductDescription TheRF5187isahighly-linear,low-poweramplifierIC.IthasbeendesignedforuseasthedriverRFamplifierinapplicationssuchasW-CDMAbasestations.TheRF5187requiresaninputandoutputmatchingnetworkandpowersupplyfeedline.Thedeviceismanufacturedonana

RFMD

RF Micro Devices

RFMD
RF5187PCBA

LOW POWER LINEAR AMPLIFIER

ProductDescription TheRF5187isahighly-linear,low-poweramplifierIC.IthasbeendesignedforuseasthedriverRFamplifierinapplicationssuchasW-CDMAbasestations.TheRF5187requiresaninputandoutputmatchingnetworkandpowersupplyfeedline.Thedeviceismanufacturedonana

RFMD

RF Micro Devices

RFMD
RF5188

3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE

ProductDescription TheRF5188isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VW-CDMAhandhelddigitalce

RFMD

RF Micro Devices

RFMD
RF5188PCBA-41X

3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE

ProductDescription TheRF5188isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VW-CDMAhandhelddigitalce

RFMD

RF Micro Devices

RFMD
RF5189

3V, 2.45GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5189isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransi

RFMD

RF Micro Devices

RFMD
RF5189PCBA

3V, 2.45GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5189isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransi

RFMD

RF Micro Devices

RFMD
RF5198

3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE

ProductDescription TheRF5198isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VW-CDMAhandhelddigitalce

RFMD

RF Micro Devices

RFMD
RF5198PCBA-41X

3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE

ProductDescription TheRF5198isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VW-CDMAhandhelddigitalce

RFMD

RF Micro Devices

RFMD
RF5216

Quad-Band GSM, Linear EDGE Transmit Module with Fourteen High Linearity TRX Switch Ports

Features ■GSMandLinearEDGETransmit ■FourteenHighLinearityTRXPorts ■MIPIRFFEDigitalControl ■LowRFSwitchPortLoss ■FewExternalComponents Required ■8kVESDProtectioninaHandset Application ■-1dBmto6dBmDriveLevel Applications ■WEDGEHandsetsandConnected

RFMD

RF Micro Devices

RFMD
RF5C01A

REAL-TIME CLOCK WITH INTERNAL RAM

OUTLINE TheRP/RF5C01Aarereal-timeclocksformicrocomputersthatcanbeconnecteddirectlytobusesofmicrocomputerswithsuchCPUsasthe8085AorZ80andallowsettingorreadingoftheclockwiththesameproceduresasfortheRead/Writeoperationformemory. Theseproductshavevariousf

RicohRICOH ELECTRONIC DEVICES CO., LTD.

理光理光集团

Ricoh
RF5C15

REAL-TIME CLOCK

OUTLINE TheRP/RF/RJ5C15arereal-timeclocksformicrocomputersthatcanbeconnecteddirectlytodatabusesof16bitCPUs,suchasthe8086,Z8000,and68000,andof8bitCPUs,suchasthe8085A,Z80,6809,and6502.Theyallowsettingorreadingoftheclockwiththesameproceduresasfort

RicohRICOH ELECTRONIC DEVICES CO., LTD.

理光理光集团

Ricoh
RF5C62

REAL-TIME CLOCK

OUTLINE TheRP/RF/RS5C62areCMOSLSIswhichservemicrocomputersasreal-timeclocksprovidingtime,calendar,andalarmfunctionsindirectcouplingwiththedatabusesofCPUssuchas8086and68000.Abuilt-intimercounteractsasawatchdogtimerorinterrupttimer.Theyareavailablein

RicohRICOH ELECTRONIC DEVICES CO., LTD.

理光理光集团

Ricoh
RF5L051K0CB4

1000 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •OnchipRCnetworkenablehighstabilityandruggedness •Excellentthermalstability,lowHCIdrift •Incompliancewit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
RF5L051K4CB4

1400 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •OnchipRCnetworkenablehighstabilityandruggedness •Excellentthermalstability,lowHCIdrift •Incompliancewit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
RF5L051K5CB4

1500 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •OnchipRCnetworkenablehighstabilityandruggedness •Excellentthermalstability,lowHCIdrift •Incompliancewit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
RF5L052K0CB4

2000 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •HighbreakdownvoltageenableclassEoperation •OnchipRCnetworkenablehighstabilityandruggedness •Excellentth

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
RF5L05500CB4

500 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •IncompliancewiththeEuropeandirective2002/95/EC Description TheRF5L05500CB4isa500W,50V,highperformanceL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
RF5L05750CF2

750 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features 1.Measuredon88-108MHzwidebandtestboardwithtwoRF5L05750CF2devicesconnected inpush-pull. •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalst

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
RF5L05950CF2

950 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features 1.Measuredon88-108MHzwidebandtestboardwithtwoRF5L05950CF2devicesconnected inpush-pull. •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalst

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
RF5L08350CB4

400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedforeaseofuse •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •IncompliancewiththeEuropeanDirect

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
RF5L08600CB4

650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedpairtransistorsinpush-pullconfiguration •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •Incomplia

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
RF5L0912750CB4

750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedpairtransistorsinpush-pullconfiguration •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •Incomplia

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
RF5L10111K0CB4

1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedpairtransistorsinpush-pullconfiguration •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •Incomplia

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
RF5L1214750CB4

750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedpairtransistorsinpush-pullconfiguration •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •Incomplia

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
RF5L15030CB2

30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •IncompliancewiththeEuropeandirective2002/95/EC Description TheRF5L15030CB2isa30W,50V,LDMOSFETdesigned

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS

RF5产品属性

  • 类型

    描述

  • 型号

    RF5

  • 制造商

    WILLOW

  • 制造商全称

    Willow Technologies Ltd

  • 功能描述

    Series, High Frequency Power Resistors Thick film,Non-Inductive

RF5供应商更多...

更新时间：2024-6-15 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市杰顺创科技有限公司
RF5117
RFMD
21+
QFN-12
3800
询价
深圳市凌旭科技有限公司
RF5111TR7X
RFMICRO
2016+
QFN16
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
上海意淼电子科技有限公司
RF5C62-9ML
BB
23+
SMD
12000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
RF505B6STL
Rohm
2019+
TO-252-
6000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市金芯世纪电子有限公司
RF501B2S
ROHM/罗姆
22+
SOT-252
100000
代理渠道/只做原装/可含税
询价
深圳市得捷芯城科技有限公司
RF5C789
ROH/理光
23+
NA/
3508
原厂直销,现货供应,账期支持!
询价
深圳市华睿芯科技有限公司
RF5110GSR
Qorvo
23+
QFN-16
3280
原厂原装正品现货,代理渠道,支持订货!!!
询价
深圳市弘扬芯城科技有限公司
RF5601TR7
Qorvo
23+
QFN8EP(2.2x2.2)
6000
诚信服务，绝对原装原盘
询价
深圳市大联智电子有限公司
RF5187
DLZ
22+
SOP-8
354000
询价
深圳市威雅利发展有限公司
RF5RD501AA-T1
RICOH
92+
SOT-89
16000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价

RF5芯片相关品牌

  • AVAGO
  • DAESAN
  • HONEYWELL-ACC
  • HUBERSUHNER
  • IXYS
  • LITEON
  • Micron
  • MMD
  • NJSEMI
  • ROSENBERGER
  • Vicor
  • WALL

RF5规格书下载地址

RF5参数引脚图相关

RF5数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2024 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示