RF5价格

参考价格:¥112.2712

型号:RF500 品牌:Hubbell 备注:这里有RF5多少钱,2024年最近7天走势,今日出价,今日竞价,RF5批发/采购报价,RF5行情走势销售排行榜,RF5报价。
型号 功能描述 生产厂家&企业 LOGO 操作
RF5

Series, High Frequency Power Resistors Thick film,Non-Inductive

WillowofferstheRFseriestomeetgeneralsetofrequirementsNON-INDUCTIVEhighfrequency,satisfywithanhighpowerandNon-inductivespecifcationatEconomicPrice. SeriesRFPrecisionPowerResistor,Non-Inductive HighFrequency NonInductivePerformence Fullpowerandvariou

WILLOWWillow Technologies Ltd

柳树科技柳树科技有限公司

WILLOW

Series, High Frequency Power Resistors Thick film,Non-Inductive

WillowofferstheRFseriestomeetgeneralsetofrequirementsNON-INDUCTIVEhighfrequency,satisfywithanhighpowerandNon-inductivespecifcationatEconomicPrice. SeriesRFPrecisionPowerResistor,Non-Inductive HighFrequency NonInductivePerformence Fullpowerandvariou

WILLOWWillow Technologies Ltd

柳树科技柳树科技有限公司

WILLOW

Fast recovery Diodes (Silicon Epitaxial Planar)

Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Fast recovery diode (Silicon epitaxial planer)

Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Super Fast Recovery Diode

Application Generalrectification Features 1)Lowswitchingloss 2)Lowforwardvoltage

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Super Fast Recovery Diode

Series StandardFastRecovery Applications Generalrectification Features 1)Powermoldtype.(CPD) 2)Highswitchingspeed 3)LowReversecurrent Construction Siliconepitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Fast Recovery Diodes

Series StandardFastRecovery Applications Generalrectification Features 1)Powermoldtype.(CPD) 2)Highswitchingspeed 3)LowReversecurrent Construction Siliconepitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

3V GSM POWER AMPLIFIER

ProductDescription TheRF5110isahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMORGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinGSMhand-helddigitalcellularequ

RFMD

RF Micro Devices

RFMD

3V GSM POWER AMPLIFIER

ProductDescription TheRF5110Gisahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMORGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinGSMhand-helddigitalcellulareq

RFMD

RF Micro Devices

RFMD

3V GSM POWER AMPLIFIER

ProductDescription TheRF5110Gisahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMORGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinGSMhand-helddigitalcellulareq

RFMD

RF Micro Devices

RFMD

3V GSM POWER AMPLIFIER

ProductDescription TheRF5110isahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMORGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinGSMhand-helddigitalcellularequ

RFMD

RF Micro Devices

RFMD

3V DCS POWER AMPLIFIER

ProductDescription TheRF5111isahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMorGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinDCS1800/1900handhelddigitalcell

RFMD

RF Micro Devices

RFMD

3V DCS POWER AMPLIFIER

ProductDescription TheRF5111isahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMorGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinDCS1800/1900handhelddigitalcell

RFMD

RF Micro Devices

RFMD

3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5117isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransi

RFMD

RF Micro Devices

RFMD

3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5117Cisalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTrans

RFMD

RF Micro Devices

RFMD

3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5117Cisalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTrans

RFMD

RF Micro Devices

RFMD

3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5117isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransi

RFMD

RF Micro Devices

RFMD

3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5122isalinear,medium-power,high-efficiency,two-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojuncti

RFMD

RF Micro Devices

RFMD

3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5125isalinear,medium-power,high-efficiency,two-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojuncti

RFMD

RF Micro Devices

RFMD

3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5125isalinear,medium-power,high-efficiency,two-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojuncti

RFMD

RF Micro Devices

RFMD

DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE

ProductDescription TheRF5144isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VIS-95/CDMA20001X/AMPShand

RFMD

RF Micro Devices

RFMD

DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE

ProductDescription TheRF5144isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VIS-95/CDMA20001X/AMPShand

RFMD

RF Micro Devices

RFMD

QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

ProductDescription TheRF5146isahigh-power,high-efficiencypoweramplifiermodulewithintegratedpowercontrolthatprovidesover50dBofcontrolrange.Thedeviceisaself-contained7mmx7mmx0.9mmleadframemodule(LFM)with50Ωinputandoutputterminals.Thedeviceisdesignedforuse

RFMD

RF Micro Devices

RFMD

QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

ProductDescription TheRF5146isahigh-power,high-efficiencypoweramplifiermodulewithintegratedpowercontrolthatprovidesover50dBofcontrolrange.Thedeviceisaself-contained7mmx7mmx0.9mmleadframemodule(LFM)with50Ωinputandoutputterminals.Thedeviceisdesignedforuse

RFMD

RF Micro Devices

RFMD

QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

ProductDescription TheRF5146isahigh-power,high-efficiencypoweramplifiermodulewithintegratedpowercontrolthatprovidesover50dBofcontrolrange.Thedeviceisaself-contained7mmx7mmx0.9mmleadframemodule(LFM)with50Ωinputandoutputterminals.Thedeviceisdesignedforuse

RFMD

RF Micro Devices

RFMD

3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5152isalinear,medium-power,high-efficiency,three-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojunc

RFMD

RF Micro Devices

RFMD

3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5152isalinear,medium-power,high-efficiency,three-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojunc

RFMD

RF Micro Devices

RFMD

3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER

ProductDescription TheRF5163isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFampli

RFMD

RF Micro Devices

RFMD

3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER

ProductDescription TheRF5163isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFampli

RFMD

RF Micro Devices

RFMD

3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER

ProductDescription TheRF5163isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFampli

RFMD

RF Micro Devices

RFMD

3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER

ProductDescription TheRF5163isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFampli

RFMD

RF Micro Devices

RFMD

3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER

ProductDescription TheRF5176isahigh-power,high-efficiencylinearamplifierICtargeting3Vhandheldsystems.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin3VCDMA-2000

RFMD

RF Micro Devices

RFMD

3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER

ProductDescription TheRF5176isahigh-power,high-efficiencylinearamplifierICtargeting3Vhandheldsystems.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin3VCDMA-2000

RFMD

RF Micro Devices

RFMD

DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE

ProductDescription TheRF5184isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierinW-CDMAhandhelddigitalcellu

RFMD

RF Micro Devices

RFMD

DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE

ProductDescription TheRF5184isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierinW-CDMAhandhelddigitalcellu

RFMD

RF Micro Devices

RFMD

LOW POWER LINEAR AMPLIFIER

ProductDescription TheRF5187isahighly-linear,low-poweramplifierIC.IthasbeendesignedforuseasthedriverRFamplifierinapplicationssuchasW-CDMAbasestations.TheRF5187requiresaninputandoutputmatchingnetworkandpowersupplyfeedline.Thedeviceismanufacturedonana

RFMD

RF Micro Devices

RFMD

LOW POWER LINEAR AMPLIFIER

ProductDescription TheRF5187isahighly-linear,low-poweramplifierIC.IthasbeendesignedforuseasthedriverRFamplifierinapplicationssuchasW-CDMAbasestations.TheRF5187requiresaninputandoutputmatchingnetworkandpowersupplyfeedline.Thedeviceismanufacturedonana

RFMD

RF Micro Devices

RFMD

3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE

ProductDescription TheRF5188isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VW-CDMAhandhelddigitalce

RFMD

RF Micro Devices

RFMD

3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE

ProductDescription TheRF5188isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VW-CDMAhandhelddigitalce

RFMD

RF Micro Devices

RFMD

3V, 2.45GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5189isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransi

RFMD

RF Micro Devices

RFMD

3V, 2.45GHz LINEAR POWER AMPLIFIER

ProductDescription TheRF5189isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransi

RFMD

RF Micro Devices

RFMD

3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE

ProductDescription TheRF5198isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VW-CDMAhandhelddigitalce

RFMD

RF Micro Devices

RFMD

3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE

ProductDescription TheRF5198isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VW-CDMAhandhelddigitalce

RFMD

RF Micro Devices

RFMD

Quad-Band GSM, Linear EDGE Transmit Module with Fourteen High Linearity TRX Switch Ports

Features ■GSMandLinearEDGETransmit ■FourteenHighLinearityTRXPorts ■MIPIRFFEDigitalControl ■LowRFSwitchPortLoss ■FewExternalComponents Required ■8kVESDProtectioninaHandset Application ■-1dBmto6dBmDriveLevel Applications ■WEDGEHandsetsandConnected

RFMD

RF Micro Devices

RFMD

REAL-TIME CLOCK WITH INTERNAL RAM

OUTLINE TheRP/RF5C01Aarereal-timeclocksformicrocomputersthatcanbeconnecteddirectlytobusesofmicrocomputerswithsuchCPUsasthe8085AorZ80andallowsettingorreadingoftheclockwiththesameproceduresasfortheRead/Writeoperationformemory. Theseproductshavevariousf

RicohRICOH ELECTRONIC DEVICES CO., LTD.

理光理光集团

Ricoh

REAL-TIME CLOCK

OUTLINE TheRP/RF/RJ5C15arereal-timeclocksformicrocomputersthatcanbeconnecteddirectlytodatabusesof16bitCPUs,suchasthe8086,Z8000,and68000,andof8bitCPUs,suchasthe8085A,Z80,6809,and6502.Theyallowsettingorreadingoftheclockwiththesameproceduresasfort

RicohRICOH ELECTRONIC DEVICES CO., LTD.

理光理光集团

Ricoh

REAL-TIME CLOCK

OUTLINE TheRP/RF/RS5C62areCMOSLSIswhichservemicrocomputersasreal-timeclocksprovidingtime,calendar,andalarmfunctionsindirectcouplingwiththedatabusesofCPUssuchas8086and68000.Abuilt-intimercounteractsasawatchdogtimerorinterrupttimer.Theyareavailablein

RicohRICOH ELECTRONIC DEVICES CO., LTD.

理光理光集团

Ricoh

1000 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •OnchipRCnetworkenablehighstabilityandruggedness •Excellentthermalstability,lowHCIdrift •Incompliancewit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1400 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •OnchipRCnetworkenablehighstabilityandruggedness •Excellentthermalstability,lowHCIdrift •Incompliancewit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1500 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •OnchipRCnetworkenablehighstabilityandruggedness •Excellentthermalstability,lowHCIdrift •Incompliancewit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2000 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •HighbreakdownvoltageenableclassEoperation •OnchipRCnetworkenablehighstabilityandruggedness •Excellentth

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

500 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •IncompliancewiththeEuropeandirective2002/95/EC Description TheRF5L05500CB4isa500W,50V,highperformanceL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

750 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features 1.Measuredon88-108MHzwidebandtestboardwithtwoRF5L05750CF2devicesconnected inpush-pull. •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalst

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

950 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features 1.Measuredon88-108MHzwidebandtestboardwithtwoRF5L05950CF2devicesconnected inpush-pull. •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalst

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedforeaseofuse •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •IncompliancewiththeEuropeanDirect

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedpairtransistorsinpush-pullconfiguration •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •Incomplia

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedpairtransistorsinpush-pullconfiguration •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •Incomplia

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedpairtransistorsinpush-pullconfiguration •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •Incomplia

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedpairtransistorsinpush-pullconfiguration •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •Incomplia

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •IncompliancewiththeEuropeandirective2002/95/EC Description TheRF5L15030CB2isa30W,50V,LDMOSFETdesigned

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

RF5产品属性

  • 类型

    描述

  • 型号

    RF5

  • 制造商

    WILLOW

  • 制造商全称

    Willow Technologies Ltd

  • 功能描述

    Series, High Frequency Power Resistors Thick film,Non-Inductive

更新时间:2024-6-15 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RFMD
21+
QFN-12
3800
RFMICRO
2016+
QFN16
9000
只做原装,假一罚十,公司可开17%增值税发票!
BB
23+
SMD
12000
全新原装假一赔十
Rohm
2019+
TO-252-
6000
只做自己库存,全新原装进口正品假一赔百,可开13%增
ROHM/罗姆
22+
SOT-252
100000
代理渠道/只做原装/可含税
ROH/理光
23+
NA/
3508
原厂直销,现货供应,账期支持!
Qorvo
23+
QFN-16
3280
原厂原装正品现货,代理渠道,支持订货!!!
Qorvo
23+
QFN8EP(2.2x2.2)
6000
诚信服务,绝对原装原盘
DLZ
22+
SOP-8
354000
RICOH
92+
SOT-89
16000
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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