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RF5价格
参考价格:¥112.2712
型号:RF500 品牌:Hubbell 备注:这里有RF5多少钱,2024年最近7天走势,今日出价,今日竞价,RF5批发/采购报价,RF5行情走势销售排行榜,RF5报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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RF5 | Series, High Frequency Power Resistors Thick film,Non-Inductive WillowofferstheRFseriestomeetgeneralsetofrequirementsNON-INDUCTIVEhighfrequency,satisfywithanhighpowerandNon-inductivespecifcationatEconomicPrice. SeriesRFPrecisionPowerResistor,Non-Inductive HighFrequency NonInductivePerformence Fullpowerandvariou | WILLOWWillow Technologies Ltd 柳树科技柳树科技有限公司 | ||
Series, High Frequency Power Resistors Thick film,Non-Inductive WillowofferstheRFseriestomeetgeneralsetofrequirementsNON-INDUCTIVEhighfrequency,satisfywithanhighpowerandNon-inductivespecifcationatEconomicPrice. SeriesRFPrecisionPowerResistor,Non-Inductive HighFrequency NonInductivePerformence Fullpowerandvariou | WILLOWWillow Technologies Ltd 柳树科技柳树科技有限公司 | |||
Fast recovery Diodes (Silicon Epitaxial Planar) Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Fast recovery diode (Silicon epitaxial planer) Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Super Fast Recovery Diode Application Generalrectification Features 1)Lowswitchingloss 2)Lowforwardvoltage | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Super Fast Recovery Diode Series StandardFastRecovery Applications Generalrectification Features 1)Powermoldtype.(CPD) 2)Highswitchingspeed 3)LowReversecurrent Construction Siliconepitaxialplanar | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Fast Recovery Diodes Series StandardFastRecovery Applications Generalrectification Features 1)Powermoldtype.(CPD) 2)Highswitchingspeed 3)LowReversecurrent Construction Siliconepitaxialplanar | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
3V GSM POWER AMPLIFIER ProductDescription TheRF5110isahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMORGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinGSMhand-helddigitalcellularequ | RFMD RF Micro Devices | |||
3V GSM POWER AMPLIFIER ProductDescription TheRF5110Gisahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMORGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinGSMhand-helddigitalcellulareq | RFMD RF Micro Devices | |||
3V GSM POWER AMPLIFIER ProductDescription TheRF5110Gisahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMORGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinGSMhand-helddigitalcellulareq | RFMD RF Micro Devices | |||
3V GSM POWER AMPLIFIER ProductDescription TheRF5110isahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMORGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinGSMhand-helddigitalcellularequ | RFMD RF Micro Devices | |||
3V DCS POWER AMPLIFIER ProductDescription TheRF5111isahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMorGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinDCS1800/1900handhelddigitalcell | RFMD RF Micro Devices | |||
3V DCS POWER AMPLIFIER ProductDescription TheRF5111isahigh-power,high-efficiencypoweramplifiermoduleofferinghighperformanceinGSMorGPRSapplications.ThedeviceismanufacturedonanadvancedGaAsHBTprocess,andhasbeendesignedforuseasthefinalRFamplifierinDCS1800/1900handhelddigitalcell | RFMD RF Micro Devices | |||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER ProductDescription TheRF5117isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransi | RFMD RF Micro Devices | |||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER ProductDescription TheRF5117Cisalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTrans | RFMD RF Micro Devices | |||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER ProductDescription TheRF5117Cisalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTrans | RFMD RF Micro Devices | |||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER ProductDescription TheRF5117isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransi | RFMD RF Micro Devices | |||
3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER ProductDescription TheRF5122isalinear,medium-power,high-efficiency,two-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojuncti | RFMD RF Micro Devices | |||
3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER ProductDescription TheRF5125isalinear,medium-power,high-efficiency,two-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojuncti | RFMD RF Micro Devices | |||
3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER ProductDescription TheRF5125isalinear,medium-power,high-efficiency,two-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojuncti | RFMD RF Micro Devices | |||
DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE ProductDescription TheRF5144isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VIS-95/CDMA20001X/AMPShand | RFMD RF Micro Devices | |||
DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE ProductDescription TheRF5144isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VIS-95/CDMA20001X/AMPShand | RFMD RF Micro Devices | |||
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE ProductDescription TheRF5146isahigh-power,high-efficiencypoweramplifiermodulewithintegratedpowercontrolthatprovidesover50dBofcontrolrange.Thedeviceisaself-contained7mmx7mmx0.9mmleadframemodule(LFM)with50Ωinputandoutputterminals.Thedeviceisdesignedforuse | RFMD RF Micro Devices | |||
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE ProductDescription TheRF5146isahigh-power,high-efficiencypoweramplifiermodulewithintegratedpowercontrolthatprovidesover50dBofcontrolrange.Thedeviceisaself-contained7mmx7mmx0.9mmleadframemodule(LFM)with50Ωinputandoutputterminals.Thedeviceisdesignedforuse | RFMD RF Micro Devices | |||
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE ProductDescription TheRF5146isahigh-power,high-efficiencypoweramplifiermodulewithintegratedpowercontrolthatprovidesover50dBofcontrolrange.Thedeviceisaself-contained7mmx7mmx0.9mmleadframemodule(LFM)with50Ωinputandoutputterminals.Thedeviceisdesignedforuse | RFMD RF Micro Devices | |||
3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER ProductDescription TheRF5152isalinear,medium-power,high-efficiency,three-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojunc | RFMD RF Micro Devices | |||
3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER ProductDescription TheRF5152isalinear,medium-power,high-efficiency,three-stageamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedInGaPGalliumArsenideHeterojunc | RFMD RF Micro Devices | |||
3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER ProductDescription TheRF5163isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFampli | RFMD RF Micro Devices | |||
3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER ProductDescription TheRF5163isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFampli | RFMD RF Micro Devices | |||
3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER ProductDescription TheRF5163isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFampli | RFMD RF Micro Devices | |||
3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER ProductDescription TheRF5163isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFampli | RFMD RF Micro Devices | |||
3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER ProductDescription TheRF5176isahigh-power,high-efficiencylinearamplifierICtargeting3Vhandheldsystems.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin3VCDMA-2000 | RFMD RF Micro Devices | |||
3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER ProductDescription TheRF5176isahigh-power,high-efficiencylinearamplifierICtargeting3Vhandheldsystems.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin3VCDMA-2000 | RFMD RF Micro Devices | |||
DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE ProductDescription TheRF5184isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierinW-CDMAhandhelddigitalcellu | RFMD RF Micro Devices | |||
DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE ProductDescription TheRF5184isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierinW-CDMAhandhelddigitalcellu | RFMD RF Micro Devices | |||
LOW POWER LINEAR AMPLIFIER ProductDescription TheRF5187isahighly-linear,low-poweramplifierIC.IthasbeendesignedforuseasthedriverRFamplifierinapplicationssuchasW-CDMAbasestations.TheRF5187requiresaninputandoutputmatchingnetworkandpowersupplyfeedline.Thedeviceismanufacturedonana | RFMD RF Micro Devices | |||
LOW POWER LINEAR AMPLIFIER ProductDescription TheRF5187isahighly-linear,low-poweramplifierIC.IthasbeendesignedforuseasthedriverRFamplifierinapplicationssuchasW-CDMAbasestations.TheRF5187requiresaninputandoutputmatchingnetworkandpowersupplyfeedline.Thedeviceismanufacturedonana | RFMD RF Micro Devices | |||
3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE ProductDescription TheRF5188isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VW-CDMAhandhelddigitalce | RFMD RF Micro Devices | |||
3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE ProductDescription TheRF5188isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VW-CDMAhandhelddigitalce | RFMD RF Micro Devices | |||
3V, 2.45GHz LINEAR POWER AMPLIFIER ProductDescription TheRF5189isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransi | RFMD RF Micro Devices | |||
3V, 2.45GHz LINEAR POWER AMPLIFIER ProductDescription TheRF5189isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransi | RFMD RF Micro Devices | |||
3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE ProductDescription TheRF5198isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VW-CDMAhandhelddigitalce | RFMD RF Micro Devices | |||
3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE ProductDescription TheRF5198isahigh-power,high-efficiencylinearamplifiermodulespecificallydesignedfor3Vhandheldsystems.ThedeviceismanufacturedonanadvancedthirdgenerationGaAsHBTprocess,andwasdesignedforuseasthefinalRFamplifierin3VW-CDMAhandhelddigitalce | RFMD RF Micro Devices | |||
Quad-Band GSM, Linear EDGE Transmit Module with Fourteen High Linearity TRX Switch Ports Features ■GSMandLinearEDGETransmit ■FourteenHighLinearityTRXPorts ■MIPIRFFEDigitalControl ■LowRFSwitchPortLoss ■FewExternalComponents Required ■8kVESDProtectioninaHandset Application ■-1dBmto6dBmDriveLevel Applications ■WEDGEHandsetsandConnected | RFMD RF Micro Devices | |||
REAL-TIME CLOCK WITH INTERNAL RAM OUTLINE TheRP/RF5C01Aarereal-timeclocksformicrocomputersthatcanbeconnecteddirectlytobusesofmicrocomputerswithsuchCPUsasthe8085AorZ80andallowsettingorreadingoftheclockwiththesameproceduresasfortheRead/Writeoperationformemory. Theseproductshavevariousf | RicohRICOH ELECTRONIC DEVICES CO., LTD. 理光理光集团 | |||
REAL-TIME CLOCK OUTLINE TheRP/RF/RJ5C15arereal-timeclocksformicrocomputersthatcanbeconnecteddirectlytodatabusesof16bitCPUs,suchasthe8086,Z8000,and68000,andof8bitCPUs,suchasthe8085A,Z80,6809,and6502.Theyallowsettingorreadingoftheclockwiththesameproceduresasfort | RicohRICOH ELECTRONIC DEVICES CO., LTD. 理光理光集团 | |||
REAL-TIME CLOCK OUTLINE TheRP/RF/RS5C62areCMOSLSIswhichservemicrocomputersasreal-timeclocksprovidingtime,calendar,andalarmfunctionsindirectcouplingwiththedatabusesofCPUssuchas8086and68000.Abuilt-intimercounteractsasawatchdogtimerorinterrupttimer.Theyareavailablein | RicohRICOH ELECTRONIC DEVICES CO., LTD. 理光理光集团 | |||
1000 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •OnchipRCnetworkenablehighstabilityandruggedness •Excellentthermalstability,lowHCIdrift •Incompliancewit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
1400 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •OnchipRCnetworkenablehighstabilityandruggedness •Excellentthermalstability,lowHCIdrift •Incompliancewit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
1500 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •OnchipRCnetworkenablehighstabilityandruggedness •Excellentthermalstability,lowHCIdrift •Incompliancewit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
2000 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •HighbreakdownvoltageenableclassEoperation •OnchipRCnetworkenablehighstabilityandruggedness •Excellentth | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
500 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •IncompliancewiththeEuropeandirective2002/95/EC Description TheRF5L05500CB4isa500W,50V,highperformanceL | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
750 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features 1.Measuredon88-108MHzwidebandtestboardwithtwoRF5L05750CF2devicesconnected inpush-pull. •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalst | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
950 W, 50 V, HF to 500 MHz RF power LDMOS transistor Features 1.Measuredon88-108MHzwidebandtestboardwithtwoRF5L05950CF2devicesconnected inpush-pull. •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalst | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedforeaseofuse •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •IncompliancewiththeEuropeanDirect | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedpairtransistorsinpush-pullconfiguration •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •Incomplia | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedpairtransistorsinpush-pullconfiguration •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •Incomplia | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedpairtransistorsinpush-pullconfiguration •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •Incomplia | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Internallymatchedpairtransistorsinpush-pullconfiguration •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •Excellentthermalstability,lowHCIdrift •Incomplia | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •IncompliancewiththeEuropeandirective2002/95/EC Description TheRF5L15030CB2isa30W,50V,LDMOSFETdesigned | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 |
RF5产品属性
- 类型
描述
- 型号
RF5
- 制造商
WILLOW
- 制造商全称
Willow Technologies Ltd
- 功能描述
Series, High Frequency Power Resistors Thick film,Non-Inductive
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RFMD |
21+ |
QFN-12 |
3800 |
||||
RFMICRO |
2016+ |
QFN16 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
BB |
23+ |
SMD |
12000 |
全新原装假一赔十 |
|||
Rohm |
2019+ |
TO-252- |
6000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ROHM/罗姆 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
ROH/理光 |
23+ |
NA/ |
3508 |
原厂直销,现货供应,账期支持! |
|||
Qorvo |
23+ |
QFN-16 |
3280 |
原厂原装正品现货,代理渠道,支持订货!!! |
|||
Qorvo |
23+ |
QFN8EP(2.2x2.2) |
6000 |
诚信服务,绝对原装原盘 |
|||
DLZ |
22+ |
SOP-8 |
354000 |
||||
RICOH |
92+ |
SOT-89 |
16000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
RF5规格书下载地址
RF5参数引脚图相关
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- RF3931
- RF3930D
- RF3928B
- RF3928
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RF201LAM4STR RF201LAM4STFTR授权一级代理进口原装现货放心采购
2019-5-11
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