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位置：首页 > IC中文资料第7220页 > RF2

RF2价格

参考价格：￥17.6091

型号：RF20 品牌：Schneider 备注：这里有RF2多少钱，2024年最近7天走势，今日出价，今日竞价，RF2批发/采购报价，RF2行情走势销售排行榜，RF2报价。
型号 功能描述 生产厂家&企业 LOGO 操作
RF2

Series, High Frequency Power Resistors Thick film,Non-Inductive

WillowofferstheRFseriestomeetgeneralsetofrequirementsNON-INDUCTIVEhighfrequency,satisfywithanhighpowerandNon-inductivespecifcationatEconomicPrice. SeriesRFPrecisionPowerResistor,Non-Inductive HighFrequency NonInductivePerformence Fullpowerandvariou

WILLOW

Willow Technologies Ltd

WILLOW
RF2

Fully encapsulated Frequency range 10 kHz to 500 MHz 6 pin DIP and SMD

文件：352.02 Kbytes Page：3 Pages

BournsBourns Inc.

伯恩斯（邦士）

Bourns
RF200

Series, High Frequency Power Resistors Thick film,Non-Inductive

WillowofferstheRFseriestomeetgeneralsetofrequirementsNON-INDUCTIVEhighfrequency,satisfywithanhighpowerandNon-inductivespecifcationatEconomicPrice. SeriesRFPrecisionPowerResistor,Non-Inductive HighFrequency NonInductivePerformence Fullpowerandvariou

WILLOW

Willow Technologies Ltd

WILLOW
RF2001NS3D

Fast Recovery Diodes

SuperFastRecoveryDiode Features 1)Ultralowswitchingloss 2)Highcurrentoverloadcapacity 3)Cathodecommondualtype Series StandardFastRecovery Applications Generalrectification Construction Siliconepitaxialplaner

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
RF2001T2D

Fast recovery Diodes (Silicon Epitaxial Planar)

Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
RF2001T2D

Fast recovery diode

Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
RF2001T3D

Fast recovery diode

1)Cathodecommontype. 2)UltraLowVF 3)Veryfastrecovery 4)Lowswitchingloss

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
RF2001T4S

Fast recovery diode

Features 1)Highreliability.(TO-220) 2)Lownoise. 3)Veryfastswitching. Construction Siliconepitaxialplanar Applications Generalrectification

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
RF200A

HIGH VOLTAGE HIGH CURRENT MINIATURE RECTIFIERS

HIGHVOLTAGEHIGHCURRENTMINIATURERECTIFIERS ●SMALLSIZEMOLDEDPACKAGES ●PRV1,000TO12,000VOLTS ●FASTRECOVERY(R_SERIES) ●AVALANCHECHARACTERISTICS

edi

edi

edi
RF200B

HIGH VOLTAGE HIGH CURRENT MINIATURE RECTIFIERS

HIGHVOLTAGEHIGHCURRENTMINIATURERECTIFIERS ●SMALLSIZEMOLDEDPACKAGES ●PRV1,000TO12,000VOLTS ●FASTRECOVERY(R_SERIES) ●AVALANCHECHARACTERISTICS

edi

edi

edi
RF202LAM2S

Super Fast Recovery Diode

Applications Generalrectification Features 1)Lowforwardvoltage 2)Lowswitchingloss 3)Highcurrentoverloadcapacity

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
RF2043

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2043isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMD

RF Micro Devices

RFMD
RF2043PCBA

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2043isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMD

RF Micro Devices

RFMD
RF2044

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2044isageneralpurpose,low-costRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMD

RF Micro Devices

RFMD
RF2045

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2045isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMD

RF Micro Devices

RFMD
RF2045PCBA

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2045isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMD

RF Micro Devices

RFMD
RF2046

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2046isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMD

RF Micro Devices

RFMD
RF2046PCBA

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2046isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMD

RF Micro Devices

RFMD
RF2047

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2047isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMD

RF Micro Devices

RFMD
RF2047PCBA

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2047isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMD

RF Micro Devices

RFMD
RF2048

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2048isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMD

RF Micro Devices

RFMD
RF2048PCBA

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2048isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMD

RF Micro Devices

RFMD
RF2103P

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2103PisamediumpowerlinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinallinearRFamplifierinUHFradiotransmittersoperatingbetween450MHzand

RFMD

RF Micro Devices

RFMD
RF2103PPCBA

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2103PisamediumpowerlinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinallinearRFamplifierinUHFradiotransmittersoperatingbetween450MHzand

RFMD

RF Micro Devices

RFMD
RF2104

MEDIUM POWER AMPLIFIER

ProductDescription TheRF2104isamediumpoweramplifierIC.ThedeviceismanufacturedonalowcostSiliconprocess,andhasbeendesignedforuseasthefinalRFamplifierinUHFradiotransmittersoperatingbetween400MHzand1000MHz.Itmayalsobeusedasadriveramplifierinhigherpowe

RFMD

RF Micro Devices

RFMD
RF2104PCBA-H

MEDIUM POWER AMPLIFIER

ProductDescription TheRF2104isamediumpoweramplifierIC.ThedeviceismanufacturedonalowcostSiliconprocess,andhasbeendesignedforuseasthefinalRFamplifierinUHFradiotransmittersoperatingbetween400MHzand1000MHz.Itmayalsobeusedasadriveramplifierinhigherpowe

RFMD

RF Micro Devices

RFMD
RF2104PCBA-L

MEDIUM POWER AMPLIFIER

ProductDescription TheRF2104isamediumpoweramplifierIC.ThedeviceismanufacturedonalowcostSiliconprocess,andhasbeendesignedforuseasthefinalRFamplifierinUHFradiotransmittersoperatingbetween400MHzand1000MHz.Itmayalsobeusedasadriveramplifierinhigherpowe

RFMD

RF Micro Devices

RFMD
RF2105

HIGH POWER LINEAR UHF AMPLIFIER

ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa

RFMD

RF Micro Devices

RFMD
RF2105L

HIGH POWER LINEAR UHF AMPLIFIER

ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa

RFMD

RF Micro Devices

RFMD
RF2105LPCBA

HIGH POWER LINEAR UHF AMPLIFIER

ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa

RFMD

RF Micro Devices

RFMD
RF210A

Dual-Band, Image-Reject Downconverters For GSM Applications

TheRF210AandRF210Bdevicesareavailableasadual-bandfrontendforGlobalSystemforMobileCommunications(GSM)handsetapplications.Bothofthesehighlyintegrated,monolithicdevicesareoptimizedfordual-banduseinGSM900/DCS1800orGSM900/PCS1900applications.Thedevicesincludetw

CONEXANTCONEXANT

CONEXANT

CONEXANT
RF210B

Dual-Band, Image-Reject Downconverters For GSM Applications

TheRF210AandRF210Bdevicesareavailableasadual-bandfrontendforGlobalSystemforMobileCommunications(GSM)handsetapplications.Bothofthesehighlyintegrated,monolithicdevicesareoptimizedfordual-banduseinGSM900/DCS1800orGSM900/PCS1900applications.Thedevicesincludetw

CONEXANTCONEXANT

CONEXANT

CONEXANT
RF2114

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2114isamediumtohighpowerlinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinallinearRFamplifierinUHFradiotransmittersoperatingbetween1MHz

RFMD

RF Micro Devices

RFMD
RF2114PCBA

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2114isamediumtohighpowerlinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinallinearRFamplifierinUHFradiotransmittersoperatingbetween1MHz

RFMD

RF Micro Devices

RFMD
RF2115

HIGH POWER UHF AMPLIFIER

ProductDescription TheRF2115LisahighpoweramplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinanalogcellularphonetransmittersorISMapplicationsoperatingat

RFMD

RF Micro Devices

RFMD
RF2115L

HIGH POWER UHF AMPLIFIER

ProductDescription TheRF2115LisahighpoweramplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinanalogcellularphonetransmittersorISMapplicationsoperatingat

RFMD

RF Micro Devices

RFMD
RF2115LPCBA

HIGH POWER UHF AMPLIFIER

ProductDescription TheRF2115LisahighpoweramplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinanalogcellularphonetransmittersorISMapplicationsoperatingat

RFMD

RF Micro Devices

RFMD
RF2117

HIGH EFFICIENCY 400MHZ AMPLIFIER

GeneralDescription TheRF2117isahighpoweramplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinanalogcellularphonetransmittersbetween400MHzand500MHzorISMa

RFMD

RF Micro Devices

RFMD
RF2117PCBA

HIGH EFFICIENCY 400MHZ AMPLIFIER

GeneralDescription TheRF2117isahighpoweramplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinanalogcellularphonetransmittersbetween400MHzand500MHzorISMa

RFMD

RF Micro Devices

RFMD
RF2119

HIGH EFFICIENCY 2V POWER AMPLIFIER

ProductDescription TheRF2119isahigh-power,high-efficiencyamplifierICtargeting2Vto4Vhandheldsystems.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinhand-helddigita

RFMD

RF Micro Devices

RFMD
RF2119PCBA

HIGH EFFICIENCY 2V POWER AMPLIFIER

ProductDescription TheRF2119isahigh-power,high-efficiencyamplifierICtargeting2Vto4Vhandheldsystems.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinhand-helddigita

RFMD

RF Micro Devices

RFMD
RF212

Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] TheRF212deviceisavailableasadual-band(EGSM900/DCS1800)frontendorasatri-band(EGSM900/DCS1800/PCS1900)frontendforGlobalSystemforMobileCommunications(GSM)mobiletelephonyapplications.Eachdeviceintegratesalltherequiredfront-endcomponentsafterthefrequenc

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
RF212-11

Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] TheRF212deviceisavailableasadual-band(EGSM900/DCS1800)frontendorasatri-band(EGSM900/DCS1800/PCS1900)frontendforGlobalSystemforMobileCommunications(GSM)mobiletelephonyapplications.Eachdeviceintegratesalltherequiredfront-endcomponentsafterthefrequenc

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
RF212-21

Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] TheRF212deviceisavailableasadual-band(EGSM900/DCS1800)frontendorasatri-band(EGSM900/DCS1800/PCS1900)frontendforGlobalSystemforMobileCommunications(GSM)mobiletelephonyapplications.Eachdeviceintegratesalltherequiredfront-endcomponentsafterthefrequenc

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
RF2125

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2125isahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalPCSphonetransmittersandbasestati

RFMD

RF Micro Devices

RFMD
RF2125P

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2125Pisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierindigitalPCSphonetransmittersandbasestati

RFMD

RF Micro Devices

RFMD
RF2125PCBA

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2125isahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalPCSphonetransmittersandbasestati

RFMD

RF Micro Devices

RFMD
RF2125PPCBA

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2125Pisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierindigitalPCSphonetransmittersandbasestati

RFMD

RF Micro Devices

RFMD
RF2126

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMD

RF Micro Devices

RFMD
RF2126

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMD

RF Micro Devices

RFMD
RF2126_07

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMD

RF Micro Devices

RFMD
RF2126PCBA

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMD

RF Micro Devices

RFMD
RF2126PCK

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMD

RF Micro Devices

RFMD
RF2127

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2127isamedium-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin1800MHzdigitalPCSphonetransmittersreq

RFMD

RF Micro Devices

RFMD
RF2127PCBA

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2127isamedium-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin1800MHzdigitalPCSphonetransmittersreq

RFMD

RF Micro Devices

RFMD
RF2128

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2128isamedium-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANand

RFMD

RF Micro Devices

RFMD
RF2128P

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2128Pisamedium-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANand

RFMD

RF Micro Devices

RFMD
RF2128PCBA

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2128isamedium-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANand

RFMD

RF Micro Devices

RFMD
RF2128PPCBA

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2128Pisamedium-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANand

RFMD

RF Micro Devices

RFMD
RF2129

3V, 2.5GHZ LINEAR POWER AMPLIFIER

ProductDescription TheRF2129isalinear,mediumpower,highefficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifi

RFMD

RF Micro Devices

RFMD

RF2产品属性

  • 类型

    描述

  • 型号

    RF2

  • 制造商

    Ferraz Shawmut

RF2供应商更多...

更新时间：2024-5-22 18:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳中芯器材有限公司
RF2626-000
LITTELFUSE
22+
原厂封装
500
百分百原装现货
询价
深圳市明嘉莱科技有限公司
RF201L2STE25
ROHM/罗姆
24+
SMA
990000
明嘉莱只做原装正品现货
询价
深圳市大联智电子有限公司
RF2173
DLZ
22+
QFN
354000
询价
深圳市得捷芯城科技有限公司
RF201LAM2STR
Rohm(罗姆)
23+
NA/
8735
原厂直销,现货供应,账期支持!
询价
深圳市天成基业科技有限公司
RF2044TR7
RFMD
21+
SMT76
500
全新、原装
询价
深圳市富芯乐电子科技有限公司
RF201L2STE25
ROHM/罗姆
22+
SOD-106-2
60000
只做原装正品现货 欢迎来电查询15919825718
询价
深圳市卓越微芯电子有限公司
RF2360
RFMD
2020+
SOP
9880
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市冠亿通科技有限公司
RF2044TR7
RFMD
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
深圳市中赛美电子科技有限公司
RF2044TR7
RFMD
21+
SMT76
7500
只做原装所有货源可以追溯原厂
询价
深圳市力拓辉电子有限公司
RF2411RFMD
RFMD
22+
SOP16
5000
只做原装,假一赔十 15118075546
询价

RF2芯片相关品牌

  • API
  • APITECH
  • BOARDCOM
  • crydom
  • Hitachi
  • IDT
  • LUGUANG
  • MOLEX4
  • NEC
  • POWEREX
  • SILABS
  • SUPERWORLD

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