位置：首页 > IC中文资料第6198页 > RD8.2E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RD8.2E | 500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
RD8.2E | 500mWPLANARTYPESILICONZENERDIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
RD8.2E | SILICONZENERDIODES 文件：75.04 Kbytes Page：4 Pages | EIC EIC |  | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ZENERDIODES 文件：162.01 Kbytes Page：5 Pages | EIC EIC | | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECH Semtech Corporation |  | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECH Semtech Corporation | | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECH Semtech Corporation | | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECH Semtech Corporation | | | |
SILICONPLANARZENERDIODE 文件：280.13 Kbytes Page：4 Pages | SEMTECH Semtech Corporation | | |
RD8.2E产品属性
- 类型
描述
- 型号
RD8.2E
- 制造商
EIC
- 制造商全称
EIC discrete Semiconductors
- 功能描述
SILICON ZENER DIODES
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
DO35 |
98000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
NEC |
23+ |
BC(B1) |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
23+ |
原厂原装 |
3005 |
优势库存 |
|||
RENESAS(瑞萨)/IDT |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
NEC |
23+ |
NA |
1986 |
专做原装正品,假一罚百! |
|||
NEC |
22+23+ |
New |
36203 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
BC(B1) |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RENESAS-瑞萨 |
24+25+/26+27+ |
车规-二极管 |
236148 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
NEC |
22+ |
DO-35 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
NEC |
2014+ |
10000 |
公司现货库存 |
RD8.2E芯片相关品牌
RD8.2E规格书下载地址
RD8.2E参数引脚图相关
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RD8.2E数据表相关新闻
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DdatasheetPDF页码索引
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