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RD1价格
参考价格:¥0.0000
型号:RD1/2WP-1.5K 品牌:Misc 备注:这里有RD1多少钱,2024年最近7天走势,今日出价,今日竞价,RD1批发/采购报价,RD1行情走势销售排行榜,RD1报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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RD1 | 10 x 10 mm Rotary DIP Switches with 3:3 Pinout 文件:314.36 Kbytes Page:1 Pages | GREATECSCrown Technologies 冠伟冠伟科技 | ||
Diffused Junction Type Silicon Diode Ultrahigh-Speed Switching Diode Features •Highbreakdownvoltage(VRRM=400V). •Highreliability. •Easytobemounted,goodheatdissipation. •Fastreverserecoverytime. •Lownoiseatthetimeofreverserecovery. | SANYOSanyo 三洋三洋电机株式会社 | |||
Low VF ??High-Speed Switching Diode LowVF•High-SpeedSwitchingDiode Features •Highbreakdownvoltage(VRRM=600V). •Highreliability. •One-pointfixingtypeplasticmoldedpackagefacilitatingeasymountingandheatdissipation. •Fastreverserecoverytime. •Lownoiseatthetimeofreverserecovery. | SANYOSanyo 三洋三洋电机株式会社 | |||
Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Ultrahigh-SpeedSwitchingDiode Features •Highbreakdownvoltage(VRRM=600V). •Highreliability. •One-pointfixingtypeplasticmoldedpackagefacilitatingeasymountingandheatdissipation. •Fastreverserecoverytime. | SANYOSanyo 三洋三洋电机株式会社 | |||
Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features •Highbreakdownvoltage(VRRM=600V). •Highreliability. •Easytobemounted,goodheatdissipation. •Fastreverserecoverytime. •Lownoiseatthetimeofreverserecovery. | SANYOSanyo 三洋三洋电机株式会社 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW PLANAR TYPE SILICON ZENER DIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FET type transistor specifically designed for HF High power amplifiers applications. DESCRIPTION RD100HHF1isaMOSFETtypetransistorspecificallydesignedforHFHighpoweramplifiersapplications. FEATURES HighpowerandHighGain: Pout>100W,Gp>11.5dB@Vdd=12.5V,f=30MHz HighEfficiency:60typ.onHFBand APPLICATION Foroutputstageofhighpoweramplifie | MitsubishiMITSUBISHI electlic 三菱电机 | |||
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD DESCRIPTION TypeRD2.0StoRD120SSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mW. FEATURES •SharpBreakdowncharacteristic. •Vz:AppliedE24standard. APPLICATIONS CircuitforConstantVoltage,ConstantCurrent,W | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW PLANAR TYPE SILICON ZENER DIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES 200 mW 3-PIN MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES 200 mW 3-PIN MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES 200 mW 3-PIN MINI MOLD TypeRD2.0MWtoRD39MWSeriesare3-PINMiniMoldPackagezenerdiodespossessingallowablepowerdissipationof200mW. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1W POWER MINI MOLD ZENER DIODE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD DESCRIPTION TypeRD2.0StoRD120SSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mW. FEATURES •SharpBreakdowncharacteristic. •Vz:AppliedE24standard. APPLICATIONS CircuitforConstantVoltage,ConstantCurrent,W | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES DESCRIPTION TypeRD4.7SLtoRD39SLSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mWfeaturinglownoiseandsharpbreakdowncharacteristic.Theyareintendedforuseinaudioequipment,instrumentequipment. FEATURES •LowNoise | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LOW NOISE SHARP BREAKDOWN CHARACTERISTICS ZENER DIODES 2PIN ULTRA SUPER MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES 2PIN ULTRA SUPER MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW PLANAR TYPE SILICON ZENER DIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |
RD1产品属性
- 类型
描述
- 型号
RD1
- 制造商
GREATECS
- 制造商全称
GREATECS
- 功能描述
10 x 10 mm Rotary DIP Switches with
- 3
3 Pinout
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DDC |
2022+ |
NA |
8600 |
原装正品,欢迎来电咨询! |
|||
DDC |
23+ |
QFP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
DDC |
21+ |
QFP |
500 |
全新、原装 |
|||
NEC |
21+ |
48000 |
12588 |
原装正品假一罚十 |
|||
RENESAS/瑞萨 |
SMD |
货真价实,假一罚十 |
25000 |
||||
RFSEMI |
2425+ |
SOD-923 |
96500 |
包邮,有问必回,专注现货,Q.微.恭候,备货HK仓 |
|||
NEC |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
NEC |
2021+ |
SOT23 |
9000 |
百分百原装正品 |
|||
NEC |
23+ |
SOD523 |
65480 |
||||
RENESAS/瑞萨 |
22+ |
SOD323 |
9600 |
原装现货,优势供应,支持实单! |
RD1规格书下载地址
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- RCUCTE
- RCU-0D
- RCU-0C
- RCT6_15
RD1数据表相关新闻
RD04AMS2
RD04AMS2
2020-5-14RD07MUS2B
RD07MUS2B
2020-5-14RD70HUP2
RD70HUP2
2020-5-14RD21XR271K500,RD21ZU224M500W,RD221M10-6X11
RD21XR271K500,RD21ZU224M500W,RD221M10-6X11
2020-5-6RC系列碳纤维组合轴向引线电阻器RC14KT100K
RC系列电阻非常适合脉冲负载处理,提供1/4W和1/2W的功率,5%和10%的容差,以及1Ω至22MΩ的欧姆值
2019-9-11RD13UM-T1原装进口现货
瀚佳科技(深圳)有限公司专业一站式全套配单服务 联系电话0755-23140719/15323480719(微信同号)
2019-1-9
DdatasheetPDF页码索引
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