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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HighPowerRFLDMOSFieldEffectTransistor300W,2110-2170MHz Description ThePTFB213004Fisa300-wattLDMOSFETdesignedforclassABoperationincellularamplifierscoveringthe2110to2170MHzfrequencyband.Featuresincludehighpeakpower,inputandoutputmatch,andathermally-enhanced,open-cavityearlessceramicpackage. Features •Broadband | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   | |
HighPowerRFLDMOSFieldEffectTransistor300W,2110??2170MHz Description ThePTFB213004Fisa300-wattLDMOSFETdesignedforclassABoperationincellularamplifierscoveringthe2110to2170MHzfrequencyband.Featuresincludehighpeakpower,inputandoutputmatch,andathermally-enhanced,open-cavityearlessceramicpackage. Features •Broadband | CreeCree Inc. 科锐科锐半导体制造商 |  | | |
HighPowerRFLDMOSFieldEffectTransistor300W,2110??2170MHz 文件：740.31 Kbytes Page：16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON TECHNOLOGIES |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
INFINEON TECHNOLOGIES |
23+ |
786 |
全新原装，有询必回 |
||||
23+ |
N/A |
46280 |
正品授权货源可靠 |
||||
INFINEON/英飞凌 |
2022+ |
H-37275-6 |
57550 |
||||
Infineon Technologies |
23+ |
H372756/2 |
9000 |
原装正品，支持实单 |
|||
INFINEON/英飞凌 |
23+ |
H-37275-6 |
1200 |
全新原装现货,价格优势 |
|||
INFINEON |
20+ |
H-37275-6 |
9986 |
||||
INFINEON/英飞凌 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||||
ADI |
23+ |
H-37275-6 |
8000 |
只做原装现货 |
|||
Infineon |
21+ |
N/A |
70 |
订货库存 只做原装 |
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