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位置：首页 > IC中文资料第7203页 > PBSS4350

PBSS4350价格

参考价格：￥0.6324

型号：PBSS4350D,115 品牌：NXP 备注：这里有PBSS4350多少钱，2024年最近7天走势，今日出价，今日竞价，PBSS4350批发/采购报价，PBSS4350行情走势销售排行榜，PBSS4350报价。
型号 功能描述 生产厂家&企业 LOGO 操作
PBSS4350

50VlowVCEsatNPNtransistor

DESCRIPTION NPNlowVCEsattransistorinaSOT54plasticpackage.PNPcomplement:PBSS5350S. FEATURES •Highpowerdissipation(830mW) •Ultralowcollector-emittersaturationvoltage •3Acontinuouscurrent •Highcurrentswitching •Improveddevicereliabilityduetoreducedheatgenerat

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350

NPNtransistor

DESCRIPTION NPNlowVCEsattransistorinaSOT457(SC-74)plasticpackage.PNPcomplement:PBSS5350D. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheatgeneration •ReplacementforSOT89/SOT223standar

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350D

NPNtransistor

DESCRIPTION NPNlowVCEsattransistorinaSOT457(SC-74)plasticpackage.PNPcomplement:PBSS5350D. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheatgeneration •ReplacementforSOT89/SOT223standar

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350D

50VlowVCEsatNPNtransistor

DESCRIPTION NPNlowVCEsattransistorinaSOT457(SC-74)plasticpackage.PNPcomplement:PBSS5350D. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheat generation •ReplacementforSOT89/SOT223standardpackage

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
PBSS4350D

50VlowVCEsatNPNtransistor

FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheatgeneration •ReplacementforSOT89/SOT223standardpackagedtransistorsduetoenhancedperformance. APPLICATIONS •Supplylineswitchingcircuits •Batterymanagement

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
PBSS4350S

50VlowVCEsatNPNtransistor

DESCRIPTION NPNlowVCEsattransistorinaSOT54plasticpackage.PNPcomplement:PBSS5350S. FEATURES •Highpowerdissipation(830mW) •Ultralowcollector-emittersaturationvoltage •3Acontinuouscurrent •Highcurrentswitching •Improveddevicereliabilityduetoreducedheatgenerat

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350SPN

50V,2.7APNP/PNPlowVCEsat(BISS)transistor

Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
PBSS4350SPN

50V,2.7ANPN/NPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
PBSS4350SPN

50V,2.7ANPN/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
PBSS4350SS

50V,2.7ANPN/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
PBSS4350SS

50V,2.7ANPN/NPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
PBSS4350SS

50V,2.7APNP/PNPlowVCEsat(BISS)transistor

Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
PBSS4350SS.115

NPN/NPNdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage.

Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain(

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
PBSS4350T

50V;3ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
PBSS4350T

50V;3ANPNlowVCEsat(BISS)transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage.PNPcomplement:PBSS5350T. FEATURES •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability •Highcollectorcurrentgain •Improvedefficiencyduetoreducedheatgene

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
PBSS4350T

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
PBSS4350T

50V;3ANPNlowVCEsat(BISS)transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage.PNPcomplement:PBSS5350T. FEATURES •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability •Highcollectorcurrentgain •Improvedefficiencyduetoreducedheatgene

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350T-Q

50V;3ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350T-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
PBSS4350X

50V,3ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT89plasticpackage. PNPcomplement:PBSS5350X 2.Featuresandbenefits •SOT89(SC-62)package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolesshea

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
PBSS4350Z

50VlowVCEsatNPNtransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyl

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
PBSS4350Z

50VlowVCEsatNPNtransistor

DESCRIPTION NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. FEATURES •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyleadingtolessheatgeneration

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350Z

50VlowVCEsatNPNtransistor

DESCRIPTION NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. FEATURES •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyleadingtolessheatgeneration

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
PBSS4350D

LowVCEsat(BISS)transistors

文件：948.33 Kbytes Page：12 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350D,125

封装/外壳：SC-74，SOT-457 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 3A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
PBSS4350D,135

封装/外壳：SC-74，SOT-457 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 3A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
PBSS4350D_15

50VlowVCEsatNPNtransistor

文件：316.41 Kbytes Page：9 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350SPN_15

50V,2.7ANPN/PNPlowVCEsat(BISS)transistor

文件：140.42 Kbytes Page：19 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350T

LowVCEsat(BISS)transistors

文件：948.33 Kbytes Page：12 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350T_15

NPNTransistors

文件：1.69201 Mbytes Page：5 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
PBSS4350T_15

50V;3ANPNlowVCEsat

文件：368.74 Kbytes Page：10 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350T-3_15

NPNTransistors

文件：1.73385 Mbytes Page：5 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
PBSS4350X

LowVCEsat(BISS)transistors

文件：948.33 Kbytes Page：12 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350X

SiliconNPNtransistorinaSOT-89PlasticPackage

文件：913.97 Kbytes Page：6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
PBSS4350X_15

NPNlowVCEsat(BISS)transistor50V,3A

文件：133.9 Kbytes Page：12 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350Z

50VlowVCEsatNPNtransistor

文件：162.23 Kbytes Page：9 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350Z

LowVCEsat(BISS)transistors

文件：948.33 Kbytes Page：12 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
PBSS4350Z_15

50VlowVCEsatNPNtransistor

文件：162.23 Kbytes Page：9 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
ADF4350

WidebandSynthesizerwithIntegratedVCO

TheADF4350allowsimplementationoffractional-Norinteger-Nphase-lockedloop(PLL)frequencysynthesizersifusedwithanexternalloopfilterandexternalreferencefrequency. TheADF4350hasanintegratedvoltagecontrolledoscillator(VCO)withafundamentaloutputfrequencyrangingfrom

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
4350

HEYClean®BrassPressureEqualizationandDrainPlugs

文件：158.47 Kbytes Page：1 Pages

Heyco

Heyco

Heyco
4350

HEYClean®BrassPressureEqualizationandDrainPlugs

文件：152.36 Kbytes Page：1 Pages

Heyco

Heyco

Heyco
ADA4350

FETInputAnalogFrontEndwithADCDriver

文件：799.17 Kbytes Page：38 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADA4350ARUZ

FETInputAnalogFrontEndwithADCDriver

文件：799.17 Kbytes Page：38 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

PBSS4350产品属性

  • 类型

    描述

  • 型号

    PBSS4350

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    50 V low VCEsat NPN transistor

PBSS4350供应商更多...

更新时间：2024-5-10 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市纳艾斯科技有限公司
PBSS4350Z
NXP
2020+
SOT223
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳信泰电子器材有限公司
PBSS4350X
NXP
24+
SOT-89
4860
十年信誉,只做全新原装正品现货,以优势说话 !!
询价
深圳市恒达亿科技有限公司
PBSS4350Z
NXP
23+
SOT-223
6000
全新原装现货、诚信经营!
询价
深圳市航宇科工半导体有限公司
PBSS4350X
NEXPERIA/安世
21+
SOT-89
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
深圳市能元时代电子有限公司
PBSS4350X,135
NXP/恩智浦
23+
na
28650
主营品牌深圳百分百原装现货假一罚十绝对价优
询价
深圳市正纳电子有限公司
PBSS4350Z
NEXPERIA/安世
23+
SOT-223
32078
10年以上分销商,原装进口件,服务型企业
询价
深圳市得捷芯城科技有限公司
PBSS4350X
NEXPERIA
23+
SOT89
131316
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
深圳市高捷芯城科技有限公司
PBSS4350SSJ
Nexperia(安世)
23+
SO-8
2669
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市拓亿芯电子有限公司
PBSS4350Z
NXP/恩智浦
23+
SOT223
25000
只做进口原装假一罚百
询价
深圳市乐创天科技有限公司
PBSS4350T
NXP
2023
SOT23
2900
原装正品现货
询价

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