DDR1 MOBILE / 8MX16 MDDR1 / G: Extended， Low， i-TCSR & PASR & DS / FBGA / 133 MHZ / -25°C~+85°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 2000 PCS 1.0 KG 36*35*7 CM
8M x16 Mobile-DDR SDRAM
FEATURES
? 1.8V power supply， 1.8V I/O power
? Double-data-rate architecture;_two data transfers per clock cycle
? Bidirectional data strobe(DQS)
? Four banks operation
? Differential clock inputs(CK and_CK)
? MRS cycle with address key programs
- CAS Latency ( 2， 3 )
- Burst Length ( 2， 4， 8， 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full， 1/2， 1/4 Array )
- Output Driver Strength Control ( Full， 1/2， 1/4， 1/8 )
? Internal Temperature Compensated Self Refresh
? Deep Power Down Mode
? All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
? Data I/O transactions on both edges of data strobe， DM for masking.
? Edge aligned data output， center aligned data input.
? No DLL;_CK to DQS is not synchronized.
? LDM/UDM for write masking only.
? Auto refresh duty cycle
- 15.6us for -25°C to 85°C
