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NX8价格
参考价格：￥165.7930
型号：NX8 品牌：HELLERMANN 备注：这里有NX8多少钱，2024年最近7天走势，今日出价，今日竞价，NX8批发/采购报价，NX8行情走势销售排行榜，NX8报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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SURFACE MOUNT TYPE CRYSTAL UNITS [NDK] ThesesurfacemountcrystalunitsareideallysuitedforclocksignalgeneratingsourcesforCPUsforpowertrainsandsafetycontroldevicesrequiringextremelyhighreliabilityasanelectronicpartusedinacar. Thiscrystalunitcanmeetrequirementstartingfromalowfrequency5MHz. | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  |   | |
Crystal Units For OA / AV ■Features Asmallsurface-mounttypecrystalunit,idealforAutomotive. CompatiblewithanenginecontrolCPUclockdeliveringthehighreliabilitythatisparticularlydemanded. ●Stablestart-upcharacteristicevenunderextremelysevereenvironmentalconditions. ●Excellentenvironmental | NDK NDK |  | | |
LASER DIODE 1310nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR2.5Gb/s DESCRIPTION TheNX8300BE-CCandNX8300CE-CCare1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodecoaxialmoduleswithaninternalopticalisolator. Thesemodulesareidealasalightsour | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
LASER DIODE 1310nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR2.5Gb/s DESCRIPTION TheNX8300BE-CCandNX8300CE-CCare1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodecoaxialmoduleswithaninternalopticalisolator. Thesemodulesareidealasalightsour | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1310nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR622Mb/s DESCRIPTION TheNX8303BG-CCandNX8303CG-CCare1310nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmodulewithsinglemodefiber. ThesemodulesareidealasalightsourceforSyn | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1310nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR622Mb/s DESCRIPTION TheNX8303BG-CCandNX8303CG-CCare1310nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmodulewithsinglemodefiber. ThesemodulesareidealasalightsourceforSyn | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1310nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFORFIBEROPTICCOMMUNICATIONS DESCRIPTION TheNX8304BE-CCandNX8304CE-CCare1310nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmoduleswithaninternalopticalisolator. Thismoduleisasal | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1310nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFORFIBEROPTICCOMMUNICATIONS DESCRIPTION TheNX8304BE-CCandNX8304CE-CCare1310nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmoduleswithaninternalopticalisolator. Thismoduleisasal | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1310nmFORLONGHAUL2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8313UDisa1310nmMultipleQuantumWell(MQW)structured DistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly) withInGaAsmonitorPIN-PDinareceptacletypepackage designedforS | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION TheNX8315XCisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFF/SFPtransceiverwithLCduplexreceptacle. FEATURES •Internalop | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION TheNX8316XCisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFF/SFPtransceiverwithLCduplexreceptacle. FEATURES •Internalop | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1310nmMQW-DFBLASERDIODEMODULEWITHDRIVER FOR10Gb/sAPPLICATIONS DESCRIPTION TheNX8340MD-CCisa1310nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodemodulewithaninternal driverIC.Itiscapableoftransmittingupto12kmstandardsinglemode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1310nmAlGaInAsMQW-DFBLASERDIODE FOR10Gb/sAPPLICATION FEATURES •Internalopticalisolator •OpticaloutputpowerPf=−2dBm •Lowthresholdcurrentlth=8mATYP.@TC=25°C •WideoperatingtemperaturerangeTC=−5to+85°C •InGaAsmonitorPIN-PD | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8346TBandNX8346TYare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolat | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8346TBandNX8346TYare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8346TSisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolator •Optical | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8346TSisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolator •Optical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8346TBandNX8346TYare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolat | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8349TBisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolator •Optical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8349TS,NX8349YK,NX8349XKare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internaloptical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8349TS,NX8349YK,NX8349XKare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internaloptical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8349TS,NX8349YK,NX8349XKare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internaloptical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION DESCRIPTION TheNX8350TSisa1271to1331nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSAs(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinanLCreceptacletypepackagedesignedforCFPtransceiver. FEATURES •Internalopticalisolator | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8369TBisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolator •Optical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8369TSisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolator •Optical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX7460LEisa1480nmpumpinglaserdiodemodulewithopticalisolatorforanEDFA(ErDopedopticalFiberAmplifier)thatcanexpandthetransmissionspanandcompensateopticallosses.IthasastrainedMultipleQuantumWell(st-MQW)DC-PBHlaserdiodethatfeatureshighoutput | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION DESCRIPTION TheNX7660JCisa1625nmnewlydevelopedStrainedMultipleQuantumWell(St-MQW)structurelaserdiodeDIPmodulewithsinglemodefiberandinternalthermoelectriccooler.Itisdesignedforlightsourcesoftelemetryequipment. FEATURES •OutputpowerPf=5mWMIN.@IF=65mA | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1550nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR156Mb/s,622Mb/s DESCRIPTION TheNX8503BG-CCandNX8503CG-CCare1550nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmoduleswithsinglemodefiber. Thesemodulesareidealasalightsour | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1550nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR156Mb/s,622Mb/s DESCRIPTION TheNX8503BG-CCandNX8503CG-CCare1550nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmoduleswithsinglemodefiber. Thesemodulesareidealasalightsour | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1550nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR622Gb/s DESCRIPTION TheNX8504BE-CCandNX8504CE-CCare1550nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmoduleswithaninternalopticalisolator. Thesemodulesareidealasalightsou | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1550nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR622Gb/s DESCRIPTION TheNX8504BE-CCandNX8504CE-CCare1550nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmoduleswithaninternalopticalisolator. Thesemodulesareidealasalightsou | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1470TO1610nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR2.5Gb/s,CWDM DESCRIPTION TheNX8508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodecoaxialmodulewithan internalopticalisolator. Thesedevicesareidealfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1470TO1610nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR2.5Gb/s,CWDM DESCRIPTION TheNX8508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodecoaxialmodulewithan internalopticalisolator. Thesedevicesareidealfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1470TO1610nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR2.5Gb/s,CWDM DESCRIPTION TheNX8508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodecoaxialmodulewithan internalopticalisolator. Thesedevicesareidealfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NX8产品属性
- 类型
描述
- 型号
NX8
- 制造商
HellermannTyton
- 功能描述
P CLIP BLACK 15.8MM PK100
- 制造商
HellermannTyton
- 功能描述
P CLIP, BLACK, 15.8MM, PK100
- 制造商
HellermannTyton
- 功能描述
P CLIP, BLACK, 15.8MM, PK100, Clip
- Style
P Clip, Clip
- Diameter
15.8mm, Mounting Hole
- Dia
4mm, Thread Size -
- Imperial
-, Thread Size -
- Metric
-,
- SVHC
No SVHC(19-Dec-2012),
- Colour
Black, External
- Length/Height
32mm, External
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
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焕盛达-专注原装真芯服务；当天下单，当天发货；
2020-8-13
DdatasheetPDF页码索引
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