位置：首页 > IC中文资料第1759页 > NTP30N20
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTP30N20 | PowerMOSFET30Amps,200Volts N−ChannelEnhancement−ModeTO−220 30AMPERES200VOLTS68m@VGS=10V(Typ) Features •Source−to−DrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode •AvalancheEnergySpecified •IDSSandRDS(on)SpecifiedatElevatedTemperature •Pb−FreePackageisAvail | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
NTP30N20 | PowerMOSFET30Amps,200VoltsN-ChannelEnhancementïModeTO-220 Features •SourceïtoïDrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode •AvalancheEnergySpecified •IDSSandRDS(on)SpecifiedatElevatedTemperature •PbïFreePackageisAvailable Applications •PWMMotorControls •PowerSupplies •Converters | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
PowerMOSFET30Amps,200VoltsN-ChannelEnhancementïModeTO-220 Features •SourceïtoïDrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode •AvalancheEnergySpecified •IDSSandRDS(on)SpecifiedatElevatedTemperature •PbïFreePackageisAvailable Applications •PWMMotorControls •PowerSupplies •Converters | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET30Amps,200VoltsN-ChannelEnhancementïModeTO-220 Features •SourceïtoïDrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode •AvalancheEnergySpecified •IDSSandRDS(on)SpecifiedatElevatedTemperature •PbïFreePackageisAvailable Applications •PWMMotorControls •PowerSupplies •Converters | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N?묬hannelEnhancement?묺odeTO??20 N−ChannelEnhancement−ModeTO−220 30AMPERES200VOLTS68m@VGS=10V(Typ) Features •Source−to−DrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode •AvalancheEnergySpecified •IDSSandRDS(on)SpecifiedatElevatedTemperature •Pb−FreePackageisAvail | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
30A,200VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC30N20isanN-channelmodePowerFET,itusesUTC’sadvancedtechnology.Thistechnologyallowsaminimumon-stateresistance,superiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalancheandcommutationmode. FEATURES *RDS(ON) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
PowerMOSFET30Amps,200VoltsN-ChannelEnhancementïModeTO-220 Features •SourceïtoïDrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode •AvalancheEnergySpecified •IDSSandRDS(on)SpecifiedatElevatedTemperature •PbïFreePackageisAvailable Applications •PWMMotorControls •PowerSupplies •Converters | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel200V(D-S)MOSFET 文件：1.60365 Mbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
PanelsandPanelAccessories 文件：2.00209 Mbytes Page：16 Pages | PENTAIRPentair plc. All rights reserved. 滨特尔滨特尔集团 |  | | |
PanelsandPanelAccessories 文件：2.00209 Mbytes Page：16 Pages | PENTAIRPentair plc. All rights reserved. 滨特尔滨特尔集团 | | |
NTP30N20产品属性
- 类型
描述
- 型号
NTP30N20
- 功能描述
MOSFET 200V 30A N-Channel
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON |
20+ |
TO-2203LEADSTANDA |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
ON |
20+ |
TO-220 |
90000 |
全新原装正品/库存充足 |
|||
ON/安森美 |
23+ |
TO-2203LEADSTANDARD |
6000 |
原装正品，支持实单 |
|||
ON |
6000 |
面议 |
19 |
TO-2203LEA |
|||
ON/安森美 |
21+ |
TO220 |
9852 |
只做原装正品假一赔十!正规渠道订货! |
|||
ON/安森美 |
21+ |
TO220 |
9852 |
只做原装正品假一赔十!正规渠道订货! |
|||
ON/安森美 |
TO-220 |
265209 |
假一罚十原包原标签常备现货! |
||||
ON |
23+ |
65480 |
|||||
ON |
1845+ |
TO220 |
5790 |
只做原装!量大可以订货!特价支持实单! |
NTP30N20芯片相关品牌
NTP30N20规格书下载地址
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