LightEmittingDiode(LED)

Description: TheNTE3020throughNTE3024LEDsofferavarietyoflenseffectsandcoloravailability.TheRed(NTE3020)sourcecolordeviceismadewithGalliumArsenidePhosphideonGalliumArsenideRedLightEmittingDiode.TheHighEfficiencyRed(NTE3022)andOrange(NTE3023)sourcecolord

LightEmittingDiode(LED)

Description: TheNTE3020throughNTE3024LEDsofferavarietyoflenseffectsandcoloravailability.TheRed(NTE3020)sourcecolordeviceismadewithGalliumArsenidePhosphideonGalliumArsenideRedLightEmittingDiode.TheHighEfficiencyRed(NTE3022)andOrange(NTE3023)sourcecolord

LightEmittingDiode(LED)

Description: TheNTE3025isaredLightemittingGalliumArsenidePhosphidediodeinaT–13/4(5mm)typepackagedesignedforuseinapplicationssuchasinstruments,printedcircuitboardindicators,andboardmountedpaneldisplays. Features: •LowPowerConsumption •HighIntensi

LightEmittingDiode(LED)

Description: TheRed/GreenNTE3026bicolorlampisawhitediffused,wideviewingangle,dualchips,utilizingGalliumArsenidePhosphideonGalliumPhosphideredLEDandGalliumPhosphideonGalliumPhosphidegreenLED.Thesedualchipsoperateindependentlyofeachother. Features: •

InfraredEmittingDiodeHighSpeedforRemoteControl

Description: TheNTE3027isaninfraredemittingdiodeinstandardGaAsonGaAstechnology,moldedinaclear,blue–greytintedplasticpackage. Features: •LowForwardVoltage •HighRadiantPowerandRadiantIntensity •SuitableforDCandHighPulseCurrentOperation •High

InfraredEmittingDiodePNGalliumArsenide

Description: TheNTE3028isdesignedforapplicationsrequiringhighpoweroutput,lowdrivepower,andveryfastresponsetime.Thisdeviceisusedinindustrialprocessingandcontrol,lightmodulators,shaftorpositionencoders,punchedcardreaders,opticalswitching,andlogiccircuits.I

Infrared-EmittingDiode

Description: TheNTE3029Bisa940nmLEDencapsulatedinaclear,wideangle,sidelookerpackage. Features: •GoodOpticaltoMechanicalAlignment •HighIrradianceLevel

Infrared-EmittingDiode

Description: TheNTE3029A940nmLEDisamulti–purposedevicedesignedforuseinnumerousapplications. ThisGalliumArsenidedeviceismanufacturedtotighttolerancesformaximumperformanceandlonglifetime. Features: •LowCost •LowDegradation •NewMoldTechnologyImpr

Infrared-EmittingDiode

Description: TheNTE3029A940nmLEDisamulti–purposedevicedesignedforuseinnumerousapplications. ThisGalliumArsenidedeviceismanufacturedtotighttolerancesformaximumperformanceandlonglifetime. Features: •LowCost •LowDegradation •NewMoldTechnologyImpr

Infrared-EmittingDiode

Description: TheNTE3029Bisa940nmLEDencapsulatedinaclear,wideangle,sidelookerpackage. Features: •GoodOpticaltoMechanicalAlignment •HighIrradianceLevel

SocketterminalstripScrewconnection

Thesocketterminalstrip302isoneofoursmallestsocketterminalstrips.Itis availablein8mmpitchwith1-to12-poledesignandcanbeeasilycuttothe desirednumberofpoles. Theflexiblepolyamidemouldingcanevenbemountedoncurvedsurfaces. Thewireprotectorofthe“HDS”-ver

2(50.8mm)SingleTurnWirewoundPrecisionPotentiometer

FEATURES •Screw,servoandbushingmounttypes available •Largerangeofohmicvalues:5to85k •Extratapsuponrequest •Gangableupto6sectionsonasameshaft •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

IndicatesPhasePresence

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Extratapsuponrequest

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SCREWTYPESERIES

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