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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP82N055DLE | MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NP82N055DLE | MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET 文件：214 Kbytes Page：10 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP82N055MUGandNP82N055NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Nonlogiclevel •Superlowon-stateresistance RDS(on)=6.0mΩMAX.(VGS=10V,ID=41A) •Highcurrentrating ID(DC)=±82A •Low | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP82N055DLE产品属性
- 类型
描述
- 型号
NP82N055DLE
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 82A I(D) | TO-262AA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
NEC |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
|||
RENESAS(瑞萨)/IDT |
23+ |
6000 |
|||||
NEC |
6000 |
面议 |
19 |
TO-262 |
|||
NEC |
23+ |
TO-262 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
NEC |
2023+ |
TO-263 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
NEC |
1922+ |
TO-263 |
216 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
日本NEC |
TO-263 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
NEC-日本电气 |
24+25+/26+27+ |
TO-262-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
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NP82N055DLE规格书下载地址
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DdatasheetPDF页码索引
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