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NE8价格
参考价格：￥3253.8626
型号：NE80532EE056512S-L8TJ 品牌：Intel 备注：这里有NE8多少钱，2024年最近7天走势，今日出价，今日竞价，NE8批发/采购报价，NE8行情走势销售排行榜，NE8报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE8 | 包装：盒 描述：CBL CLAMP P-TYPE FASTENER 电缆，电线 - 管理 电缆支撑与紧固件 | EssentraEssentra Components 益升华益升华科技股份有限公司 |  |   |
Coaxial transceiver interface for Ethernet/Thin Ethernet DESCRIPTION TheNE8392CCoaxialTransceiverInterface(CTI)isabipolarcoaxiallinedriver/receiverforEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
Coaxial transceiver interface for Ethernet/Thin Ethernet DESCRIPTION TheNE8392CCoaxialTransceiverInterface(CTI)isabipolarcoaxiallinedriver/receiverforEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Coaxial transceiver interface for Ethernet/Thin Ethernet DESCRIPTION TheNE8392CCoaxialTransceiverInterface(CTI)isabipolarcoaxiallinedriver/receiverforEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Coaxial transceiver interface for Ethernet/Thin Ethernet DESCRIPTION TheNE8392CCoaxialTransceiverInterface(CTI)isabipolarcoaxiallinedriver/receiverforEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Low-power coaxial Ethernet transceiver DESCRIPTION TheNE83C92isalowpowerBiCMOScoaxialtransceiverinterface(CTI)forEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitter,receive-modecoll | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Low-power coaxial Ethernet transceiver DESCRIPTION TheNE83C92isalowpowerBiCMOScoaxialtransceiverinterface(CTI)forEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitter,receive-modecoll | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Low-power coaxial Ethernet transceiver DESCRIPTION TheNE83C92isalowpowerBiCMOScoaxialtransceiverinterface(CTI)forEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitter,receive-modecoll | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Low-power coaxial Ethernet transceiver DESCRIPTION TheNE83Q92isalowpowerBiCMOScoaxialtransceiverinterface(CTI)forEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitter,receive-modecoll | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Low-power coaxial Ethernet transceiver DESCRIPTION TheNE83Q92isalowpowerBiCMOScoaxialtransceiverinterface(CTI)forEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitter,receive-modecoll | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Low-power coaxial Ethernet transceiver DESCRIPTION TheNE83Q92isalowpowerBiCMOScoaxialtransceiverinterface(CTI)forEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitter,receive-modecoll | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Low-power coaxial Ethernet transceiver DESCRIPTION TheNE83Q92isalowpowerBiCMOScoaxialtransceiverinterface(CTI)forEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitter,receive-modecoll | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Low-power coaxial Ethernet transceiver DESCRIPTION TheNE83Q92isalowpowerBiCMOScoaxialtransceiverinterface(CTI)forEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitter,receive-modecoll | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Enhanced coaxial Ethernet transceiver DESCRIPTION TheNE83Q93isalowpowercoaxialtransceiverinterface(CTI)forEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitter,receive-modecollisiond | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Enhanced coaxial Ethernet transceiver DESCRIPTION TheNE83Q93isalowpowercoaxialtransceiverinterface(CTI)forEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitter,receive-modecollisiond | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Enhanced coaxial Ethernet transceiver DESCRIPTION TheNE83Q93isalowpowercoaxialtransceiverinterface(CTI)forEthernet(10base5)andThinEthernet(10base2)localareanetworks.TheCTIisconnectedbetweenthecoaxialcableandtheDataTerminalEquipment(DTE)andconsistsofareceiver,transmitter,receive-modecollisiond | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION TheNE8500199PowerGaAsFETcovers2GHzto10GHzfrequencyrangeforcommercialamplifier,oscillatorapplicationsandsoon. NE8500100isthetwo-cellsrecessedgatechipusedin‘99’package. ThedeviceincorporatesTi-Algateandsilicondioxideglassivation.Toreducethethe | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
GaAs MES FET 1WC-BANDPOWERGaAsFET N-CHANNELGaAsMESFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION TheNE8500199PowerGaAsFETcovers2GHzto10GHzfrequencyrangeforcommercialamplifier,oscillatorapplicationsandsoon. NE8500100isthetwo-cellsrecessedgatechipusedin‘99’package. ThedeviceincorporatesTi-Algateandsilicondioxideglassivation.Toreducethethe | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET 1WC-BANDPOWERGaAsFET N-CHANNELGaAsMESFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION TheNE8500199PowerGaAsFETcovers2GHzto10GHzfrequencyrangeforcommercialamplifier,oscillatorapplicationsandsoon. NE8500100isthetwo-cellsrecessedgatechipusedin‘99’package. ThedeviceincorporatesTi-Algateandsilicondioxideglassivation.Toreducethethe | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET 1WC-BANDPOWERGaAsFET N-CHANNELGaAsMESFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION TheNE8500199PowerGaAsFETcovers2GHzto10GHzfrequencyrangeforcommercialamplifier,oscillatorapplicationsandsoon. NE8500100isthetwo-cellsrecessedgatechipusedin‘99’package. ThedeviceincorporatesTi-Algateandsilicondioxideglassivation.Toreducethethe | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET 1WC-BANDPOWERGaAsFET N-CHANNELGaAsMESFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION TheNE8500199PowerGaAsFETcovers2GHzto10GHzfrequencyrangeforcommercialamplifier,oscillatorapplicationsandsoon. NE8500100isthetwo-cellsrecessedgatechipusedin‘99’package. ThedeviceincorporatesTi-Algateandsilicondioxideglassivation.Toreducethethe | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET 1WC-BANDPOWERGaAsFET N-CHANNELGaAsMESFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0Wpartiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorpo | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0W partiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorp | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0W partiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorp | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0Wpartiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorpo | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0Wpartiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorpo | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0W partiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorp | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0Wpartiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorpo | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0W partiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorp | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0Wpartiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorpo | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0W partiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorp | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0Wpartiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorpo | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0W partiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorp | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0Wpartiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorpo | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET DESCRIPTION TheNE8500295powerGaAsFETcovers3.5to8.5GHzfrequencyrangewiththreedifferentClassA,2.0W partiallymatcheddevices.Eachpackageddevicehasaninputlumpedelementmatchingnetwork. NE8500200isthesix-cellsrecessedgatechipusedin‘95’package. Thedeviceincorp | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET TheNE850R599powerGaAsFETcovers2GHzto10GHzfrequencyrangeforcommercialamplifier,oscillatorapplicationsandsoon. ThedeviceincorporatesTi-AIgateandsilicondioxideglassivation.Toreducethethermalresistance,thedevicehasaPHS.(PlatedHeatSink) NEC’sstrigentquality | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET TheNE850R599powerGaAsFETcovers2GHzto10GHzfrequencyrangeforcommercialamplifier,oscillatorapplicationsandsoon. ThedeviceincorporatesTi-AIgateandsilicondioxideglassivation.Toreducethethermalresistance,thedevicehasaPHS.(PlatedHeatSink) NEC’sstrigentquality | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-CHANNEL GaAs MES FET DESCRIPTION TheNE850R599ApowerGaAsFETcovers2GHzto10GHzfrequencyrangeforcommercialamplifier,oscillatorapplicationsandsoon. ThedeviceincorporatesTi-AIgateandsilicondioxideglassivation.Toreducethethermalresistance,thedevicehasaPHS.(PlatedHeatSink) NEC’sstr | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NE851M13 NONLINEARMODEL | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN SILICON RF TRANSISTOR NPNSILICONRFTRANSISTORFOR HIGH-FREQUENCYLOWNOISE 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Lowphasedistortion,lowvoltageoperation •IdealforOSCapplications •3-pinsuperlead-lessminimold(M33,0804PKG)package | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN SILICON RF TRANSISTOR NPNSILICONRFTRANSISTORFOR HIGH-FREQUENCYLOWNOISE 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Lowphasedistortion,lowvoltageoperation •IdealforOSCapplications •3-pinsuperlead-lessminimold(M33,0804PKG)package | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN SILICON RF TRANSISTOR NPNSILICONRFTRANSISTORFOR HIGH-FREQUENCYLOWNOISE 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Lowphasedistortion,lowvoltageoperation •IdealforOSCapplications •3-pinsuperlead-lessminimold(M33,0804PKG)package | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN SILICON RF TRANSISTOR NPNSILICONRFTRANSISTORFOR HIGH-FREQUENCYLOWNOISE 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Lowphasedistortion,lowvoltageoperation •IdealforOSCapplications •3-pinsuperlead-lessminimold(M33,0804PKG)package | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION TheNE856M02isanNPNsiliconepitaxialbipolartransistordesignedformediumpowerapplicationsrequiringhighdynamicrangeandlowintermodulationdistortion.ThisdeviceoffersexcellentperformanceandreliabilityatlowcostthroughNECstitanium,platinum,goldmetallization | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION TheNE856M02isanNPNsiliconepitaxialbipolartransistordesignedformediumpowerapplicationsrequiringhighdynamicrangeandlowintermodulationdistortion.ThisdeviceoffersexcellentperformanceandreliabilityatlowcostthroughNECstitanium,platinum,goldmetallization | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN SILICON TRANSISTOR DESCRIPTION TheNE856M03transistorisdesignedforlowcostamplifierandoscillatorapplications.Lownoisefigure,highgainandhighcurrentcapabilityequatetowidedynamicrangeandexcellentlinearity.NECsnewlowprofile/flatleadstyleM03packageisidealfortodaysportablewireless | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN SILICON TRANSISTOR DESCRIPTION TheNE856M13transistorisdesignedforlowcostamplifierandoscillatorapplications.Lownoisefigure,highgainandhighcurrentcapabilityequatetowidedynamicrangeandexcellentlinearity.NECsnewlowprofile/flatleadstyleM13packageisidealfortodaysportablewireless | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN SILICON TRANSISTOR DESCRIPTION TheNE856M23transistorisdesignedforlowcostamplifierandoscillatorapplications.Lownoisefigure,highgainandhighcurrentcapabilityequatetowidedynamicrangeandexcellentlinearity.NECsnewlowprofile/ceramicsubstratestyleM23packageisidealfortodaysportablew | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN SILICON TRANSISTOR DESCRIPTION TheNE894M13transistorisdesignedforoscillatorapplicationsabove3GHz.TheNE894M13featureslowvoltage,lowcurrentoperation,lownoise,andhighgain.NECsnewlowprofile/flatleadstyleM13packageisidealfortodaysportablewirelessapplications. FEATURES •NEWMINIAT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET 文件：445.37 Kbytes Page：8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET 文件：445.37 Kbytes Page：8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET 文件：445.37 Kbytes Page：8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET 文件：445.37 Kbytes Page：8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET 文件：641.62 Kbytes Page：10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET 文件：641.62 Kbytes Page：10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NE8产品属性
- 类型
描述
- 型号
NE8
- 功能描述
CLAMP VINYL-DIPPED 7/16X3/8
- RoHS
是
- 类别
线缆，导线 - 管理 >> 线夹和夹具
- 系列
NE
- 标准包装
100
- 系列
TC
- 类型
C-夹
- 开口尺寸
0.79 L x 0.54 W x 0.67 H（20.1mm x 13.7mm x 17.0mm）
- 安装类型
钉子
- 材质
聚丙烯
- 颜色
黑
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
SC70-3 |
20000 |
全新原装假一赔十 |
|||
NEC |
2020+ |
323 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NEC |
10+ |
323 |
1310 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
|||
NEC |
2016+ |
SOT-323 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
23+ |
SOT323 |
20000 |
原厂原装正品现货 |
|||
NEC |
23+ |
SOP-8 |
18000 |
||||
NEC |
20+/21+ |
SOT23/ |
9500 |
全新原装进口现货 |
|||
Intel/Altera |
23+ |
6000 |
|||||
NEC |
23+ |
244 |
现货供应 |
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- NE76118
- NE76100
- NE76084
- NE76038
- NE76000
- NE760
- NE-76
- NE74020
- NE74014
- NE74000
- NE73435
- NE73430
- NE734
- NE72218
- NE72118
- NE720B
- NE720A
- NE720
- NE71383
- NE71300
- NE713
- NE696M01-T1-A
- NE696M01-T1
- NE68730-T1
- NE68719-T1
- NE68519-T1-A
- NE68519-A
- NE68139-T1-A
- NE68139R-T1
- NE68133-T1B-A
- NE68133-A
- NE68130-T1-A
- NE68119-T1-A
- NE68119-A
- NE68039R-T1-A
- NE68039R-T1
- NE68033-T1B-A
- NE68033-A
- NE68030-A
- NE68019-T1-A
NE8数据表相关新闻
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2023-3-16NE5568-交换式电源控制器
描述该NE5568是一个使用的开关式电源控制电路供应。它包含一个内部温度补偿的供应，脉宽调制，锯齿振荡器，过电流检测锁存和输出阶段。该装置适用于低成本开关电源的应用场合广泛的看家功能不是必需的。是的NE5568作者：NE5561所选版本。特征•微小型（四）包•脉宽调制器•电流限制（按周期循环）•锯齿波发生器•稳压电源•双脉冲防护•内部温度补偿基准
2013-3-7NE57811-先进的DDR内存，关闭终端电源
描述NE57811目的是提供一个终止的权力双数据速率（DDR）SDRAM内存总线。它显着减少元件数量，电路板空间和整体系统成本比以前的解决方案。NE57811DDR终端稳压器维持输出RAM的电压（DDR参考总线电压）的一半，电源电压。它是能够提供高达±3.5一个持续时期。过流限制保护从浪涌NE57811启动电流和过热关断保护在极端温度情况下的设备。SPAK-5（SOT756）包热强大的灵活性散热设计。由于NE57811是一个线性稳压器，没有外部电感器或开关场效应管是必要的。响应速度快负载的变化，降低输出电容器的需求。特点
2013-1-14NE56631-30D-低有效的系统复位
NE56631-XX是一个家庭的低有效，上电复位内提供±3％及超精密的阈值电压检测低工作电源电流通常为1.5毫安。几种检测阈值电压可在1.9V，2.0V，为2.7V，2.8V，2.9V，3.0V，3.1V，4.2V，4.3V，4.4V，4.5V，4.6V。根据要求提供其它阈值从100mV的步长1.9V至4.6V。随着它的超低电源电流和高精密电压阈值NE56631-XX的检测能力，非常适合各种如复位逻辑电路和电池供电应用微处理器，电压检查和检测水平。应用•复位微处理器和逻辑电路•电压
2012-11-18
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