您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第7262页 > NE681

NE681价格

参考价格：￥4.1751

型号：NE68119-A 品牌：CEL 备注：这里有NE681多少钱，2024年最近7天走势，今日出价，今日竞价，NE681批发/采购报价，NE681行情走势销售排行榜，NE681报价。
型号 功能描述 生产厂家&企业 LOGO 操作
NE681

NECsNPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION NECsNE681seriesofNPNepitaxialsilicontransistorsaredesignedforlownoise,highgain,lowcostamplifierapplications.Boththechipandmicro-xversionsaresuitableforamplifierapplicationsupto4GHz.TheNE681dieisalsoavailableinsixdifferentlowcostplasticsurf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE681

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE68100

NECsNPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION NECsNE681seriesofNPNepitaxialsilicontransistorsaredesignedforlownoise,highgain,lowcostamplifierapplications.Boththechipandmicro-xversionsaresuitableforamplifierapplicationsupto4GHz.TheNE681dieisalsoavailableinsixdifferentlowcostplasticsurf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE68118-T1

NECsNPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION NECsNE681seriesofNPNepitaxialsilicontransistorsaredesignedforlownoise,highgain,lowcostamplifierapplications.Boththechipandmicro-xversionsaresuitableforamplifierapplicationsupto4GHz.TheNE681dieisalsoavailableinsixdifferentlowcostplasticsurf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE68119

NONLINEARMODEL

DESCRIPTION NECsNE681seriesofNPNepitaxialsilicontransistorsaredesignedforlownoise,highgain,lowcostamplifierapplications.Boththechipandmicro-xversionsaresuitableforamplifierapplicationsupto4GHz.TheNE681dieisalsoavailableinsixdifferentlowcostplasticsurf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE68119-T1

NECsNPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION NECsNE681seriesofNPNepitaxialsilicontransistorsaredesignedforlownoise,highgain,lowcostamplifierapplications.Boththechipandmicro-xversionsaresuitableforamplifierapplicationsupto4GHz.TheNE681dieisalsoavailableinsixdifferentlowcostplasticsurf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE68130-T1

NECsNPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION NECsNE681seriesofNPNepitaxialsilicontransistorsaredesignedforlownoise,highgain,lowcostamplifierapplications.Boththechipandmicro-xversionsaresuitableforamplifierapplicationsupto4GHz.TheNE681dieisalsoavailableinsixdifferentlowcostplasticsurf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE68133

NONLINEARMODEL

DESCRIPTION NECsNE681seriesofNPNepitaxialsilicontransistorsaredesignedforlownoise,highgain,lowcostamplifierapplications.Boththechipandmicro-xversionsaresuitableforamplifierapplicationsupto4GHz.TheNE681dieisalsoavailableinsixdifferentlowcostplasticsurf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE68133-T1B

NECsNPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION NECsNE681seriesofNPNepitaxialsilicontransistorsaredesignedforlownoise,highgain,lowcostamplifierapplications.Boththechipandmicro-xversionsaresuitableforamplifierapplicationsupto4GHz.TheNE681dieisalsoavailableinsixdifferentlowcostplasticsurf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE68135

NECsNPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION NECsNE681seriesofNPNepitaxialsilicontransistorsaredesignedforlownoise,highgain,lowcostamplifierapplications.Boththechipandmicro-xversionsaresuitableforamplifierapplicationsupto4GHz.TheNE681dieisalsoavailableinsixdifferentlowcostplasticsurf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE68135

NONLINEARMODEL

DESCRIPTION NECsNE681seriesofNPNepitaxialsilicontransistorsaredesignedforlownoise,highgain,lowcostamplifierapplications.Boththechipandmicro-xversionsaresuitableforamplifierapplicationsupto4GHz.TheNE681dieisalsoavailableinsixdifferentlowcostplasticsurf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE68139R-T1

NECsNPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION NECsNE681seriesofNPNepitaxialsilicontransistorsaredesignedforlownoise,highgain,lowcostamplifierapplications.Boththechipandmicro-xversionsaresuitableforamplifierapplicationsupto4GHz.TheNE681dieisalsoavailableinsixdifferentlowcostplasticsurf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE68139-T1

NECsNPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION NECsNE681seriesofNPNepitaxialsilicontransistorsaredesignedforlownoise,highgain,lowcostamplifierapplications.Boththechipandmicro-xversionsaresuitableforamplifierapplicationsupto4GHz.TheNE681dieisalsoavailableinsixdifferentlowcostplasticsurf

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE681M23

NPNSILICONTRANSISTOR

DESCRIPTION TheNE681M23transistorisidealforlownoise,highgain,andlowcostamplifierapplications.NECsnewlowprofile/ceramicsubstratestyleM23packageisidealfortodaysportablewirelessapplications.TheNE681isalsoavailableinchip,Micro-x,andsixdifferentlowcostplastic

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NE68100

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE68118

NONLINEARMODEL

文件：44.14 Kbytes Page：1 Pages

CEL

California Eastern Laboratories

CEL
NE68118-T1

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE68118-T1-A

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE68119

NONLINEARMODEL

文件：46.47 Kbytes Page：1 Pages

CEL

California Eastern Laboratories

CEL
NE68119-A

封装/外壳：SOT-523 包装：卷带（TR） 描述：RF TRANS NPN 10V 7GHZ SOT523 分立半导体产品 晶体管 - 双极（BJT）- 射频

CEL

California Eastern Laboratories

CEL
NE68119-T1

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE68119-T1-A

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE68119-T1-A

封装/外壳：SOT-523 包装：卷带（TR）剪切带（CT） 描述：RF TRANS NPN 10V 7GHZ SOT523 分立半导体产品 晶体管 - 双极（BJT）- 射频

CEL

California Eastern Laboratories

CEL
NE68130

NONLINEARMODEL

文件：30.18 Kbytes Page：1 Pages

CEL

California Eastern Laboratories

CEL
NE68130-T1

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE68130-T1-A

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE68133

NONLINEARMODEL

文件：30.17 Kbytes Page：1 Pages

CEL

California Eastern Laboratories

CEL
NE68133-T1B

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE68133-T1B-A

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE68135

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE68139

NONLINEARMODEL

文件：37.15 Kbytes Page：1 Pages

CEL

California Eastern Laboratories

CEL
NE68139R-T1

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE68139-T1

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE68139-T1-A

NPNSILICONHIGHFREQUENCYTRANSISTOR

文件：663.14 Kbytes Page：21 Pages

CEL

California Eastern Laboratories

CEL
NE681M03

NECsNPNSILICONTRANSISTOR

文件：142.16 Kbytes Page：4 Pages

CEL

California Eastern Laboratories

CEL
NE681M03-A

NECsNPNSILICONTRANSISTOR

文件：142.16 Kbytes Page：4 Pages

CEL

California Eastern Laboratories

CEL
NE681M03-T1-A

NECsNPNSILICONTRANSISTOR

文件：142.16 Kbytes Page：4 Pages

CEL

California Eastern Laboratories

CEL
NE681M13

NECsNPSILICONTRANSISTOR

文件：148.69 Kbytes Page：3 Pages

CEL

California Eastern Laboratories

CEL
NE681M13-A

NECsNPSILICONTRANSISTOR

文件：148.69 Kbytes Page：3 Pages

CEL

California Eastern Laboratories

CEL
NE681M13-T3-A

NECsNPSILICONTRANSISTOR

文件：148.69 Kbytes Page：3 Pages

CEL

California Eastern Laboratories

CEL
681

POWERINDUCTOR

●FEATURE 1.Excellentsolderheatresistance(add“C”isforhighcurrenttype) 2.Lowvoltagedropsandsmallvariationsinductance ●APPLICATION 1.DCpowersupplycircuits 2.Powerlinechokecoils…etc

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
681

WIREWOUNDSMDINDUCTOR

●FEATURE 1.Lowcorelossforhighfrequencypowerapplication 2.Largeterminalsurface ●APPLICATION 1.Portablecommunicationequipment,notebookcomputer

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
681

SHIELDEDSMTPOWERINDUCTORS

●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment

PRODUCTWELLProductwell Precision Elect.CO.,LTD

寶德華股台灣寶德華股有限公司

PRODUCTWELL
681

3M??Scotch짰TransparentFilmTape681

文件：573 Kbytes Page：6 Pages

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

3M
681

RECTIFIERSASSEMBLIES

文件：71.81 Kbytes Page：2 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

NE681产品属性

  • 类型

    描述

  • 型号

    NE681

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NE681供应商更多...

更新时间：2024-4-27 9:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市振芯物联科技有限公司
NE68119-T1-A
NEC
22+
SOT-423
12120
只做进口原装现货库存
询价
深圳市力通伟业半导体有限公司
NE68139R
NEC
13+
SOT143R
36000
特价热销现货库存
询价
深圳市豪迈兴电子有限公司
NE68119-T1-A
NEC
2339+
SOT-423
32280
原装现货 假一罚十！十年信誉只做原装！
询价
柒号芯城电子商务(深圳)有限公司
NE681M13-T3-A
NEC
2023+
SOT723
700000
柒号芯城跟原厂的距离只有0.07公分
询价
深圳市安富世纪电子有限公司
NE68118-T1-A
NEC
21+
SOT343
50000
全新原装正品现货,支持订货
询价
深圳市宇创芯科技有限公司
NE681M13-T1-A
NEC
22+
SOT-523
9600
原装现货,优势供应,支持实单!
询价
天津市博通航睿技术有限公司
NE68118-T1-A
NEC
2016+
SOT343
6400
全新原装 实单必成
询价
京海半导体(深圳)有限公司
NE681M13-T3-A
NEC
21+
SOT723
10000
原装现货假一罚十
询价
深圳市胜彬电子有限公司
NE68139E
NEC
22+
SOT143
3000
原装正品,支持实单
询价
瀚佳科技(深圳)有限公司
NE68119-T1
NEC
2020+
SOT-0603
16800
绝对原装进口现货,假一赔十,价格优势!?
询价

NE681芯片相关品牌

  • ABLIC
  • AMD
  • COILCRAFT
  • Good-Ark
  • GREATECS
  • ILLINOISCAPACITOR
  • Infineon
  • KEMET
  • MOLEX9
  • MSYSTEM
  • SSDI
  • WTE

NE681规格书下载地址

NE681参数引脚图相关

NE681数据表相关新闻

  • NEO-F10T-00B

    进口代理

    2024-2-27

  • NEO-F10N-00B

    进口代理

    2024-2-27

  • NEMEME001

    NEMEME001

    2023-3-16

  • NE5568-交换式电源控制器

    描述该NE5568是一个使用的开关式电源控制电路供应。它包含一个内部温度补偿的供应，脉宽调制，锯齿振荡器，过电流检测锁存和输出阶段。该装置适用于低成本开关电源的应用场合广泛的看家功能不是必需的。是的NE5568作者：NE5561所选版本。特征•微小型（四）包•脉宽调制器•电流限制（按周期循环）•锯齿波发生器•稳压电源•双脉冲防护•内部温度补偿基准

    2013-3-7

  • NE57811-先进的DDR内存，关闭终端电源

    描述NE57811目的是提供一个终止的权力双数据速率（DDR）SDRAM内存总线。它显着减少元件数量，电路板空间和整体系统成本比以前的解决方案。NE57811DDR终端稳压器维持输出RAM的电压（DDR参考总线电压）的一半，电源电压。它是能够提供高达±3.5一个持续时期。过流限制保护从浪涌NE57811启动电流和过热关断保护在极端温度情况下的设备。SPAK-5（SOT756）包热强大的灵活性散热设计。由于NE57811是一个线性稳压器，没有外部电感器或开关场效应管是必要的。响应速度快负载的变化，降低输出电容器的需求。特点

    2013-1-14

  • NE56631-30D-低有效的系统复位

    NE56631-XX是一个家庭的低有效，上电复位内提供±3％及超精密的阈值电压检测低工作电源电流通常为1.5毫安。几种检测阈值电压可在1.9V，2.0V，为2.7V，2.8V，2.9V，3.0V，3.1V，4.2V，4.3V，4.4V，4.5V，4.6V。根据要求提供其它阈值从100mV的步长1.9V至4.6V。随着它的超低电源电流和高精密电压阈值NE56631-XX的检测能力，非常适合各种如复位逻辑电路和电池供电应用微处理器，电压检查和检测水平。应用•复位微处理器和逻辑电路•电压

    2012-11-18

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2024 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示