位置：首页 > IC中文资料第6511页 > NAND01GR3B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NAND01GR3B | 512Mbit,1Gbit,2Gbit,4Gbit,8Gbit2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory FEATURESSUMMARY ■HIGHDENSITYNANDFLASHMEMORIES –Upto8Gbitmemoryarray –Upto64Mbitsparearea –Costeffectivesolutionsformassstorage applications ■NANDINTERFACE –x8orx16buswidth –MultiplexedAddress/Data –Pinoutcompatibilityforalldensities ■SUPPLYVOLTAG | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
NAND01GR3B | 1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 |  | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
封装/外壳：63-TFBGA 包装：管件 描述：IC FLASH 1GBIT PARALLEL 63VFBGA 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | |
NAND01GR3B产品属性
- 类型
描述
- 型号
NAND01GR3B
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON |
22+ |
BGA63 |
7560 |
全新原装正品 现货 优势供应 |
|||
MICRON/美光 |
22+ |
VFBGA63 |
9500 |
只做原装正品假一赔十!正规渠道订货! |
|||
micron(镁光) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
原装正品 |
BGA |
200 |
国内领先的集成电路专业配单!量大可发货!可开17%增值 |
||||
ST/STMicroelectronics/意法半导 |
21+ |
BGA |
200 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
22+ |
BGA |
30000 |
原装正品 |
|||
ST |
22+ |
BGA |
28600 |
只做原装正品现货假一赔十一级代理 |
|||
ST |
11+ |
BGA |
200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
BGA |
25000 |
原厂/代理渠道 价格优势 |
|||
ST |
23+ |
进口原装 |
9000 |
全新原装热卖/假一罚十!更多数量可订货 |
NAND01GR3B芯片相关品牌
NAND01GR3B规格书下载地址
NAND01GR3B参数引脚图相关
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- NAND01GR3B2BZA6E
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- NAND01GR3B2AZB6
- NAND01GR3B2AZB1
- NAND01GR3B2AZA6
- NAND01GR3B2AZA1
- NAND01GR3B2AN6
- NAND01GR3B2AN1
- NAND01GR3B2AE06
- NAND01GR3A2CZB6T
- NAND01GR3A2CZB6F
- NAND01GR3A2CZB6E
- NAND01GR3A2CZB6
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- NAND01GR3A2CZA1F
- NAND01GR3A2CZA1E
- NAND01GR3A2CZA1
- NAND01GR3A2CV6T
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