MTP30价格

参考价格:¥2.4902

型号:MTP3055VL 品牌:Fairchild 备注:这里有MTP30多少钱,2024年最近7天走势,今日出价,今日竞价,MTP30批发/采购报价,MTP30行情走势销售排行榜,MTP30报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MTP30

Glass Passivated Three-Phase Bridge Rectifier, 30A

文件:1.29734 Mbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI
MTP30

Glass Passivated Three-Phase Bridge Rectifier

文件:615.9 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET

N-CHANNEL60V-0.1Ω-12ATO-220STripFET™MOSFET ■TYPICALRDS(on)=0.1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublest

MotorolaMotorola, Inc

摩托罗拉

Motorola

N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET

N-CHANNEL60V-0.1Ω-12ATO-220STripFET™MOSFET ■TYPICALRDS(on)=0.1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL 60V-0.1Q-12A TO-220 STripFET??MOSFET

N-CHANNEL60V-0.1Ω-12ATO-220STripFET™MOSFET ■TYPICALRDS(on)=0.1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublest

MotorolaMotorola, Inc

摩托罗拉

Motorola

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifications.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托罗拉

Motorola

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. ThisMOSFETfeaturesfasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

N-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托罗拉

Motorola

POWER FIELD EFFECT TRANSISTOR

MotorolaMotorola, Inc

摩托罗拉

Motorola

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt

MotorolaMotorola, Inc

摩托罗拉

Motorola

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt

MotorolaMotorola, Inc

摩托罗拉

Motorola

Glass Passivated Three-Phase Bridge Rectifier

文件:615.9 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

High surge current capability

文件:376.55 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

Three-Phase Bridge Rectifier

文件:669.05 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

Three-Phase Bridge Rectifier

文件:669.05 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

Three-Phase Bridge Rectifier

文件:669.05 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

Three-Phase Bridge Rectifier

文件:669.05 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

Three-Phase Bridge Rectifier

文件:669.05 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

Three-Phase Bridge Rectifier

文件:669.05 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

Three-Phase Bridge Rectifier

文件:669.05 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:228.24 Kbytes Page:5 Pages

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

CYSTEKEC

Glass Passivated Three-Phase Bridge Rectifier

文件:615.9 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

Glass Passivated Three-Phase Bridge Rectifier

文件:615.9 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

Glass Passivated Three-Phase Bridge Rectifier

文件:615.9 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

Glass Passivated Three-Phase Bridge Rectifier 30A/1600V

文件:1.10074 Mbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

Glass Passivated Three-Phase Bridge Rectifier

文件:615.9 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

Glass Passivated Three-Phase Bridge Rectifier

文件:615.9 Kbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

-24V P-CHANNEL Enhancement Mode MOSFET

文件:314.29 Kbytes Page:8 Pages

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

CYSTEKEC

Power MOSFET

文件:202.4 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Power MOSFET

文件:207.21 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel 60 V (D-S) MOSFET

文件:1.31369 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N?묬hannel Power MOSFET

文件:208.58 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel 60 V (D-S) MOSFET

文件:1.31366 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel 100-V (D-S) MOSFET

文件:949.61 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

P?묬hannel Power MOSFET

文件:210.08 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

P-Channel 60 V (D-S) MOSFET

文件:941.45 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

P?묬hannel Power MOSFET

文件:210.08 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Glass Passivated Three-Phase Bridge Rectifier, 30A

文件:1.11779 Mbytes Page:3 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

MTP30产品属性

  • 类型

    描述

  • 型号

    MTP30

  • 制造商

    NELLSEMI

  • 制造商全称

    Nell Semiconductor Co., Ltd

  • 功能描述

    Glass Passivated Three-Phase Bridge Rectifier, 30A

更新时间:2024-6-4 14:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
23+
TO-220
89630
当天发货全新原装现货
ON-安森美
24+25+/26+27+
TO-220-3
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
ON/安森美
2122+
TO-220
11980
只做原装进口正品,假一赔十,价格优势
ON
19+
TO-220
86191
原厂代理渠道,每一颗芯片都可追溯原厂;
ONSemiconductor
18+
NA
3000
进口原装正品优势供应QQ3171516190
ON
2020+
TO-220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
onsemi
24+
TO-220-3
30000
晶体管-分立半导体产品-原装正品
VBSEMI
19+
T0-220
29600
绝对原装现货,价格优势!
ST/意法
TO220
15446
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON/安森美
TO-220
265209
假一罚十原包原标签常备现货!

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