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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MT5C1008 | 128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN |  |   |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEULTRALOWPOWER GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | | |
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN AUSTIN | | |
MT5C1008产品属性
- 类型
描述
- 型号
MT5C1008
- 制造商
AUSTIN
- 制造商全称
Austin Semiconductor
- 功能描述
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON |
23+ |
SOJ |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
ASI |
1436+ |
CDIP |
30000 |
绝对原装进口现货可开增值税发票 |
|||
N/A |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
ASID |
23+ |
CLCC |
18000 |
||||
18+ |
原厂原装假一赔十 |
210 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
||||
MT |
新批次 |
PLCC |
4326 |
||||
MICROSS |
22+ |
CDIP32 |
12800 |
本公司只做进口原装!优势低价出售! |
|||
ASI |
22+ |
AUDIP |
12245 |
现货,原厂原装假一罚十! |
|||
ASI |
23+ |
DIP |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ASI/Advanced Semiconductor, In |
21+ |
SOP32 |
11 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
MT5C1008芯片相关品牌
MT5C1008规格书下载地址
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品质，我们是第一
2020-11-21
DdatasheetPDF页码索引
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