位置：首页 > IC中文资料第9438页 > MT54W2MH18B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MT54W2MH18B | 36MbQDR?줚ISRAM2-WORDBURST 4MEGx8,4MEGx9,2MEGx18,1MEGx361.8VVDD,HSTL,QDRIIb2SRAM GENERALDESCRIPTION TheMicron®QDR™II(QuadDataRate™)synchronous,pipelinedburstSRAMemployshigh-speed,lowpowerCMOSdesignsusinganadvanced6TCMOSprocess. TheQDRarchitectureconsistsoftwoseparat | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  |   |
36MbQDR?줚ISRAM2-WORDBURST 4MEGx8,4MEGx9,2MEGx18,1MEGx361.8VVDD,HSTL,QDRIIb2SRAM GENERALDESCRIPTION TheMicron®QDR™II(QuadDataRate™)synchronous,pipelinedburstSRAMemployshigh-speed,lowpowerCMOSdesignsusinganadvanced6TCMOSprocess. TheQDRarchitectureconsistsoftwoseparat | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
36MbQDR?줚ISRAM2-WORDBURST 4MEGx8,4MEGx9,2MEGx18,1MEGx361.8VVDD,HSTL,QDRIIb2SRAM GENERALDESCRIPTION TheMicron®QDR™II(QuadDataRate™)synchronous,pipelinedburstSRAMemployshigh-speed,lowpowerCMOSdesignsusinganadvanced6TCMOSprocess. TheQDRarchitectureconsistsoftwoseparat | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
36MbQDR?줚ISRAM2-WORDBURST 4MEGx8,4MEGx9,2MEGx18,1MEGx361.8VVDD,HSTL,QDRIIb2SRAM GENERALDESCRIPTION TheMicron®QDR™II(QuadDataRate™)synchronous,pipelinedburstSRAMemployshigh-speed,lowpowerCMOSdesignsusinganadvanced6TCMOSprocess. TheQDRarchitectureconsistsoftwoseparat | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
36MbQDR?줚ISRAM2-WORDBURST 4MEGx8,4MEGx9,2MEGx18,1MEGx361.8VVDD,HSTL,QDRIIb2SRAM GENERALDESCRIPTION TheMicron®QDR™II(QuadDataRate™)synchronous,pipelinedburstSRAMemployshigh-speed,lowpowerCMOSdesignsusinganadvanced6TCMOSprocess. TheQDRarchitectureconsistsoftwoseparat | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
36MbQDR?줚ISRAM2-WORDBURST 4MEGx8,4MEGx9,2MEGx18,1MEGx361.8VVDD,HSTL,QDRIIb2SRAM GENERALDESCRIPTION TheMicron®QDR™II(QuadDataRate™)synchronous,pipelinedburstSRAMemployshigh-speed,lowpowerCMOSdesignsusinganadvanced6TCMOSprocess. TheQDRarchitectureconsistsoftwoseparat | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
36MbQDR?줚ISRAM2-WORDBURST 4MEGx8,4MEGx9,2MEGx18,1MEGx361.8VVDD,HSTL,QDRIIb2SRAM GENERALDESCRIPTION TheMicron®QDR™II(QuadDataRate™)synchronous,pipelinedburstSRAMemployshigh-speed,lowpowerCMOSdesignsusinganadvanced6TCMOSprocess. TheQDRarchitectureconsistsoftwoseparat | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
36MbQDR?줚ISRAM2-WORDBURST 4MEGx8,4MEGx9,2MEGx18,1MEGx361.8VVDD,HSTL,QDRIIb2SRAM GENERALDESCRIPTION TheMicron®QDR™II(QuadDataRate™)synchronous,pipelinedburstSRAMemployshigh-speed,lowpowerCMOSdesignsusinganadvanced6TCMOSprocess. TheQDRarchitectureconsistsoftwoseparat | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
36MbQDR?줚ISRAM2-WORDBURST 4MEGx8,4MEGx9,2MEGx18,1MEGx361.8VVDD,HSTL,QDRIIb2SRAM GENERALDESCRIPTION TheMicron®QDR™II(QuadDataRate™)synchronous,pipelinedburstSRAMemployshigh-speed,lowpowerCMOSdesignsusinganadvanced6TCMOSprocess. TheQDRarchitectureconsistsoftwoseparat | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | |
MT54W2MH18B产品属性
- 类型
描述
- 型号
MT54W2MH18B
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
36Mb QDR⑩II SRAM 2-WORD BURST
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON/美光 |
23+ |
BGA |
10880 |
原装正品，支持实单 |
|||
CY |
0306+ |
BGA |
40 |
||||
MICRON |
2023+ |
BGA |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
CYPRESS |
23+ |
BGA |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
MICRON/美光 |
22+ |
FBGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
N/A |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CY |
2016+ |
BGA |
6528 |
只做原厂原装现货!终端客户个别型号可以免费送样品! |
|||
MICRON |
23+ |
NA |
108 |
专做原装正品,假一罚百! |
|||
Micron Technology Inc. |
21+ |
NA |
11200 |
正品专卖,进口原装深圳现货 |
|||
Micron Technology Inc. |
21+ |
- |
9000 |
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2020-11-21
DdatasheetPDF页码索引
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