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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MT48H16M16LF | 256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  |   |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
MOBILESDRAM GENERALDESCRIPTION The256MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456bits.ItisinternallyconfiguredasaquadbankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex16’s67,108,8 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
封装/外壳：54-VFBGA 包装：托盘 描述：IC DRAM 256MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
封装/外壳：54-VFBGA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC DRAM 256MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | |
MT48H16M16LF产品属性
- 类型
描述
- 型号
MT48H16M16LF
- 制造商
MICRON
- 制造商全称
Micron Technology
- 256Mb
16 Meg x 16, 8 Meg x 32 Mobile SDRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON/美光 |
23+ |
BGA |
98900 |
原厂原装正品现货!! |
|||
MICRON/美光 |
22+ |
VFBGA54 |
40256 |
本公司只做原装进口现货 |
|||
MICRON/美光 |
23+ |
BGA |
89630 |
当天发货全新原装现货 |
|||
MICRON/美光 |
22+ |
BGA |
39197 |
郑重承诺只做原装进口现货 |
|||
MICRON/美光 |
10+ |
BGA |
880000 |
明嘉莱只做原装正品现货 |
|||
MICRON |
1436+ |
BGA |
30000 |
绝对进口原装现货可开增值税发票 |
|||
Micron Technology Inc. |
21+ |
24-TBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
MICRON |
17+ |
BGA |
14 |
全新原装,支持实单,假一罚十,德创芯微 |
|||
micron(镁光) |
2324+ |
NA |
78920 |
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口 |
|||
MICROSEMI |
2022+ |
DO-214AC |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
MT48H16M16LF芯片相关品牌
MT48H16M16LF规格书下载地址
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DdatasheetPDF页码索引
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