N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features •Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Rev

12Amps,500VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC12N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanch

FastSwitching

•FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max) •FastSwitching •APPLICATIONS •Switchmodepowersupply.

PowerMOSFETs

FEATURES •LowFigure-of-MeritRonxQg •100AvalancheTested •GateChargeImproved •Trr/QrrImproved •ComplianttoRoHSDirective2002/95/EC

12A,500VN-CHANNELPOWERMOSFET

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N-Channel650V(D-S)MOSFET

文件：1.039369 Mbytes Page：8 Pages