位置：首页 > IC中文资料第6616页 > MRF9080
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF9080 | RFPOWERFIELDEFFECTTRANSISTORS TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,common–sourceamplifierapplicationsin26voltbasest | MotorolaMotorola, Inc 摩托罗拉 |  |   |
RFPowerFieldEffectTransistors(N−ChannelEnhancement−ModeLateralMOSFETs) RFPowerFieldEffectTransistors N−ChannelEnhancement−ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge−signal,common−sourceamplifierapplicationsin26voltbasestationequipment. •TypicalPer | freescaleFreescaleiscreatingasmarter 飞思卡尔 |  | | |
RFPowerFieldEffectTransistors(N−ChannelEnhancement−ModeLateralMOSFETs) RFPowerFieldEffectTransistors N−ChannelEnhancement−ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge−signal,common−sourceamplifierapplicationsin26voltbasestationequipment. •TypicalPer | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPOWERFIELDEFFECTTRANSISTORS TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,common–sourceamplifierapplicationsin26voltbasest | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPOWERFIELDEFFECTTRANSISTORS TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,common–sourceamplifierapplicationsin26voltbasest | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPOWERFIELDEFFECTTRANSISTORS TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,common–sourceamplifierapplicationsin26voltbasest | MotorolaMotorola, Inc 摩托罗拉 | | | |
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 960MHZ NI-780 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：223.06 Kbytes Page：11 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：223.06 Kbytes Page：11 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 960MHZ NI-780 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
INSULATEDPCSPACERS/SUPPORTS 文件：100.21 Kbytes Page：2 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
Lockit™NylonCableClamps 文件：153.18 Kbytes Page：1 Pages | Heyco Heyco |  | | |
SnapRivets–continued 文件：98.42 Kbytes Page：1 Pages | Heyco Heyco | | | |
Nytye®PushRivets 文件：100.54 Kbytes Page：1 Pages | Heyco Heyco | | | |
SnapRivets 文件：152.09 Kbytes Page：2 Pages | Heyco Heyco | | |
MRF9080产品属性
- 类型
描述
- 型号
MRF9080
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
RF POWER FIELD EFFECT TRANSISTORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
21+ |
5000 |
原装现货/假一赔十/支持第三方检验 |
||||
FREESCALE |
05/06+ |
NI780 |
123 |
全新原装100真实现货供应 |
|||
MOT |
22+ |
原装 |
2789 |
全新原装自家现货!价格优势! |
|||
FREESCALE |
21+ |
TO-272 |
12800 |
只有原装 ,可支持实单 |
|||
MOTOROLA |
TO272 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
NXP |
22+ |
NI780 |
9000 |
原厂渠道,现货配单 |
|||
Motorola/MOTOROLA/摩托罗拉/摩 |
21+ |
TO272 |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MOTOROLA/摩托罗拉 |
23+ |
1688 |
房间现货库存:QQ:373621633 |
||||
Freescale(飞思卡尔) |
23+ |
标准封装 |
9557 |
我们只是原厂的搬运工 |
|||
FREESCALE |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
MRF9080芯片相关品牌
MRF9080规格书下载地址
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MRF9080数据表相关新闻
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MRF6V3090NR5射频金属氧化物半导体场效应(RFMOSFET)晶体管
2020-11-24
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