位置：首页 > IC中文资料第581页 > MRF6S18100NR1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF6S18100NR1 | RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications. GSMApplication •TypicalGSMPerformance:VDD=28Volt | freescaleFreescaleiscreatingasmarter 飞思卡尔 |  |   |
MRF6S18100NR1 | RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs 文件：769.86 Kbytes Page：21 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | |
MRF6S18100NR1 | 封装/外壳：TO-270AB 包装：卷带（TR） 描述：FET RF 68V 1.99GHZ TO2704 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | |
RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs 文件：769.86 Kbytes Page：21 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | |
MRF6S18100NR1产品属性
- 类型
描述
- 型号
MRF6S18100NR1
- 功能描述
射频MOSFET电源晶体管 1990MHZ 28V
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCA |
2020+ |
TO-270 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FREESCALE |
NI-880 |
68900 |
原包原标签100%进口原装常备现货! |
||||
FREESCALE |
2018+ |
SMD |
1680 |
FREESCALE专营品牌进口原装现货假一赔十 |
|||
MOTOROLA/摩托罗拉 |
23+ |
198 |
现货供应 |
||||
NXP-恩智浦 |
24+25+/26+27+ |
TO-270 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
Freescale |
22+ |
SMD |
2789 |
全新原装自家现货!价格优势! |
|||
FREESCALE |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NXP |
22+ |
TO270 WB4 |
9000 |
原厂渠道,现货配单 |
|||
FRESSCAL |
08+ |
SMD |
80 |
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MRF6S18100NR1规格书下载地址
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