位置：首页 > IC中文资料第6453页 > MRF18085
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TheRFMOSFETLineRFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFETs TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu | MotorolaMotorola, Inc 摩托罗拉 |  |   | |
RFPowerFieldEffectTransistors DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM-GSMEDGE1805-1880MHz. •GSMandGSMEDGEP | freescaleFreescaleiscreatingasmarter 飞思卡尔 |  | | |
RFPowerFieldEffectTransistors DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM-GSMEDGE1805-1880MHz. •GSMandGSMEDGEP | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM-GSMEDGE1805-1880MHz. •GSMandGSMEDGEP | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
TheRFMOSFETLineRFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFETs TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistors TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistors TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu | MotorolaMotorola, Inc 摩托罗拉 | | | |
TheRFMOSFETLineRFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFETs TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1930to1990MHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullFrequencyBand(193 | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullF | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1930to1990MHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullFrequencyBand(193 | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullF | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1930to1990MHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullFrequencyBand(193 | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullF | MotorolaMotorola, Inc 摩托罗拉 | | | |
封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 65V 1.88GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
封装/外壳：NI-780 包装：卷带（TR） 描述：FET RF 65V 1.99GHZ NI-78O 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
GaNPowerTransistors 文件：803.61 Kbytes Page：7 Pages | RFHICRFHIC RFHIC |  | |
MRF18085产品属性
- 类型
描述
- 型号
MRF18085
- 制造商
FREESCALE
- 制造商全称
Freescale Semiconductor, Inc
- 功能描述
RF Power Field Effect Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
1922+ |
465B-03 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
FREESCALE |
23+ |
150 |
现货供应 |
||||
MOTOROLA/摩托罗拉 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
FREESCALE |
21+ |
TO-63 |
1356 |
绝对有现货,不止网上数量!原装正品,假一赔十! |
|||
FREESCALE |
标准封装 |
58250 |
一级代理原装正品现货期货均可订购 |
||||
MOT |
22+ |
原装 |
2789 |
全新原装自家现货!价格优势! |
|||
MOTOROLA |
23+ |
高频管 |
3000 |
原装正品假一罚百!可开增票! |
|||
MOTOROLA |
23+ |
SOP-14 |
9526 |
||||
MOTOROLA/摩托罗拉 |
22+ |
465B-03 |
360000 |
原装现货销售 |
|||
FREE/MOT |
2339+ |
SMD |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
MRF18085芯片相关品牌
MRF18085规格书下载地址
MRF18085参数引脚图相关
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