位置：首页 > IC中文资料第644页 > MRF18060AL
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLL | freescaleFreescaleiscreatingasmarter 飞思卡尔 |  |   | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLL | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPOWERFIELDEFFECTTRANSISTORS TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB | MotorolaMotorola, Inc 摩托罗拉 |  | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：374.03 Kbytes Page：10 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 1.88GHZ NI-780 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：374.03 Kbytes Page：10 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 1.88GHZ NI-780 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
60W,1805MHz-1880MHz,LDMOSRFPowerTransistor Introduction TheAGR18060Eisa60W,26VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforenhanceddataforglobalevolution(EDGE),globalsystemformobilecommunication(GSM),andsinglecarrierormulti-carrierclassABpower | TriQuint TriQuint Semiconductor, Inc. |  | | |
60W,1805MHz-1880MHz,LDMOSRFPowerTransistor Introduction TheAGR18060Eisa60W,26VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforenhanceddataforglobalevolution(EDGE),globalsystemformobilecommunication(GSM),andsinglecarrierormulti-carrierclassABpower | TriQuint TriQuint Semiconductor, Inc. | | | |
60W,1805MHz-1880MHz,LDMOSRFPowerTransistor Introduction TheAGR18060Eisa60W,26VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforenhanceddataforglobalevolution(EDGE),globalsystemformobilecommunication(GSM),andsinglecarrierormulti-carrierclassABpower | TriQuint TriQuint Semiconductor, Inc. | | | |
SIntegratedLEDTactSwitch Features/Benefits •CompactSize •THTversions •Differentheight •SeveralLEDcolors •Highlifecycles | CK-COMPONENTS C&K Components |  | | |
SIntegratedLEDTactSwitch Features/Benefits •CompactSize •THTversions •Differentheight •SeveralLEDcolors •Highlifecycles | CK-COMPONENTS C&K Components | | |
MRF18060AL产品属性
- 类型
描述
- 型号
MRF18060AL
- 功能描述
射频MOSFET电源晶体管 60W GSM 1.8GHZ
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSL |
SMD |
68900 |
原包原标签100%进口原装常备现货! |
||||
MOTOROLA/摩托罗拉 |
23+ |
190 |
现货供应 |
||||
FREESCALE |
2048+ |
TO-59 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
Freescale |
23+ |
250 |
专做原装正品,假一罚百! |
||||
FREESCALE |
22+ |
TO-59 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
Freescal |
20+ |
高频管 |
29516 |
高频管全新原装主营-可开原型号增税票 |
|||
MOT |
22+ |
原装 |
2789 |
全新原装自家现货!价格优势! |
|||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FREESCALE |
TO-59 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
MOT/fcs |
23+ |
高频管 |
5000 |
原装正品,假一罚十 |
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MRF18060AL规格书下载地址
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