位置：首页 > IC中文资料第6543页 > MRF18060
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RFPOWERFIELDEFFECTTRANSISTORS TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB | MotorolaMotorola, Inc 摩托罗拉 |  |   | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLL | freescaleFreescaleiscreatingasmarter 飞思卡尔 |  | | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLL | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLL | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPOWERFIELDEFFECTTRANSISTORS TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPOWERFIELDEFFECTTRANSISTORS TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPOWERFIELDEFFECTTRANSISTORS TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistors DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. •GSMPerformance,FullFrequency | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistor DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. •GSMPerformance,FullFre | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistor DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. •GSMPerformance,FullFre | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistor DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. •GSMPerformance,FullFre | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. •GSMPerformance,FullFrequency | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistors DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. •GSMPerformance,FullFrequency | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistors DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. •GSMPerformance,FullFrequency | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：374.03 Kbytes Page：10 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 1.88GHZ NI-780 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：374.03 Kbytes Page：10 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 1.88GHZ NI-780 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
60W,1805MHz-1880MHz,LDMOSRFPowerTransistor Introduction TheAGR18060Eisa60W,26VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforenhanceddataforglobalevolution(EDGE),globalsystemformobilecommunication(GSM),andsinglecarrierormulti-carrierclassABpower | TriQuint TriQuint Semiconductor |  | | |
60W,1805MHz-1880MHz,LDMOSRFPowerTransistor Introduction TheAGR18060Eisa60W,26VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforenhanceddataforglobalevolution(EDGE),globalsystemformobilecommunication(GSM),andsinglecarrierormulti-carrierclassABpower | TriQuint TriQuint Semiconductor | | | |
60W,1805MHz-1880MHz,LDMOSRFPowerTransistor Introduction TheAGR18060Eisa60W,26VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforenhanceddataforglobalevolution(EDGE),globalsystemformobilecommunication(GSM),andsinglecarrierormulti-carrierclassABpower | TriQuint TriQuint Semiconductor | | | |
SIntegratedLEDTactSwitch Features/Benefits •CompactSize •THTversions •Differentheight •SeveralLEDcolors •Highlifecycles | CK-COMPONENTS C&K Components |  | | |
SIntegratedLEDTactSwitch Features/Benefits •CompactSize •THTversions •Differentheight •SeveralLEDcolors •Highlifecycles | CK-COMPONENTS C&K Components | | |
MRF18060产品属性
- 类型
描述
- 型号
MRF18060
- 制造商
FREESCALE
- 制造商全称
Freescale Semiconductor, Inc
- 功能描述
RF Power Field Effect Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSL |
23+ |
NA/ |
250 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MOT |
2020+ |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
||||
MOT |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
|||||
FREESCALE |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
FSL |
SMD |
265209 |
假一罚十原包原标签常备现货! |
||||
NXP-恩智浦 |
24+25+/26+27+ |
TO-59.高频管 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
MOT |
580 |
||||||
FREESCALE |
NA |
8600 |
原装正品,欢迎来电咨询! |
||||
MOT |
0114+ |
1044 |
全新原装 实单必成 |
||||
FREESCALE |
22+ |
NA |
21000 |
原厂原包装。假一罚十。可开13%增值税发票。 |
MRF18060芯片相关品牌
MRF18060规格书下载地址
MRF18060参数引脚图相关
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MRF18060数据表相关新闻
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