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型号：MMG15241HT1 品牌：Freescale 备注：这里有MMG多少钱，2024年最近7天走势，今日出价，今日竞价，MMG批发/采购报价，MMG行情走势销售排行榜，MMG报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MMG | METALLIZED POLYESTER FILM CAPACITORS 文件：79.65 Kbytes Page：4 Pages | RubyconRubycon Corporation 红宝石RUBYCON株式会社 |  |   |
POWERLUX IGBT ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. •Built–InFreeWheelingDiode •Built–InGateProtectionZenerDiode •IndustryStandardPackage(SOT223) •HighSpeedEoff:Typic | MotorolaMotorola, Inc 摩托罗拉 |  | | |
Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi | freescaleFreescaleiscreatingasmarter 飞思卡尔 |  | | |
Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi | MotorolaMotorola, Inc 摩托罗拉 | | | |
Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
650V 100A Three Level Inverter Module PRODUCTFEATURES □Temperaturesenseincluded □Freewheelingdiodeswithfastandsoftreverserecovery □650VIGBTCHIP(Trench+FieldStoptechnology) □Lowswitchinglossesandshorttailcurrent □Lowsaturationvoltageandpositivetemperaturecoefficient APPLICATIONS □SolarApplicat | MACMICMacMic 宏微宏微科技有限公司 |  | | |
GALLIUM ARSENIDE CATV INTEGRATED AMPLIFIER MODULE Description •24VdcSupply,40to870MHz,CATVIntegratedForwardPowerDoublerAmplifierModule Features •Specifiedfor79–,112–and132–ChannelLoading •ExcellentDistortionPerformance •HigherOutputCapability •Built–inInputDiodeProtection •GaAsFETTransistorTechnology •U | MotorolaMotorola, Inc 摩托罗拉 | | | |
Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupply,40to870MHz,CATVIntegratedForwardPowerDoublerAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •HigherOutputCapability •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •U | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Indium Gallium Phosphorus HBT IndiumGalliumPhosphorusHBT WLANPowerAmplifier Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. •26.5dBmP1dB@2450MHz •PowerGain:27.5dBTyp(@f=2450MHz,ClassAB) •HighGain,HighEfficiencyandHighLinearity •EVM=3Typ@Pout=+1 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Indium Gallium Phosphorus HBT - WLAN Power Amplifier IndiumGalliumPhosphorusHBT WLANPowerAmplifier Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. •26.5dBmP1dB@2450MHz •PowerGain:27.5dBTyp(@f=2450M | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Indium Gallium Phosphorus HBT IndiumGalliumPhosphorusHBT WLANPowerAmplifier Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. •26.5dBmP1dB@2450MHz •PowerGain:27.5dBTyp(@f=2450MHz,ClassAB) •HighGain,HighEfficiencyandHighLinearity •EVM=3Typ@Pout=+1 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
1200V 25A Six-Pack Module PRODUCTFEATURES □SolderContactTechnology,Ruggedmountingduetointegrated Mountingclamps □Temperaturesenseincluded □Freewheelingdiodeswithfastandsoftreverserecovery □SubstrateforLowThermalResistance □Lowsaturationvoltageandpositivetemperaturecoefficient □Fast | MACMICMacMic 宏微宏微科技有限公司 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3001NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itis | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3001NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) 40-3600MHz,20dB21dBmInGaPHBT BroadbandHighLinearityAmplifier TheMMG3002NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicatio | MotorolaMotorola, Inc 摩托罗拉 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3003NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputprematched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurpose | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3003NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputprematched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurpose | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3004NT1isaGeneralPurposeAmplifierthatisinternallyprematchedanddesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplic | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3004NT1isageneralpurposeamplifierthatisinternallyprematchedanddesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforappli | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3005NT1isaGeneralPurposeAmplifierthatisinternallyprematchedanddesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplic | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3005NT1isageneralpurposeamplifierthatisinternallyprematchedanddesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforappli | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) 400--2400MHz,17.5dB33dBmInGaPHBTGPA TheMMG3006NT1isageneralpurposeamplifierthatisinternallyinputprematchedanddesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom400to2400M | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor(InGaP HBT) 0--6000MHz,19dB16dBmInGaPHBT TheMMG3007NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to600 | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor (InGaP HBT) 0--6000MHz,19dB16dBmInGaPHBTGPA TheMMG3007NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor(InGaP HBT) 0--6000MHz,18.5dB15dBmInGaPHBT TheMMG3008NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to600 | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor (InGaP HBT) 0--6000MHz,18.5dB15dBmInGaPHBTGPA TheMMG3008NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor (InGaP HBT) HeterojunctionBipolarTransistor(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3009NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitablefor | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor (InGaP HBT) 0--6000MHz,15dB18dBmInGaPHBTGPA TheMMG3009NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor (InGaP HBT) 0-6000MHz,15dB17dBmInGaPHBT TheMMG3010NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6000MH | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor (InGaP HBT) 0-6000MHz,15dB17dBmInGaPHBT TheMMG3010NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6000MH | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor (InGaP HBT) 0--6000MHz,15dB15dBmInGaPHBT TheMMG3011NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6000 | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor (InGaP HBT) 0--6000MHz,15dB15dBmInGaPHBTGPA TheMMG3011NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) 0-6000MHz,19dB18.5dBmInGaPHBT TheMMG3012NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfreq | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) 0-6000MHz,19dB18.5dBmInGaPHBTGPA TheMMG3012NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfreq | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) 0-6000MHz,20dB20.5dBmInGaPHBT TheMMG3013NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequ | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) 0--6000MHz,20dB20.5dBmInGaPHBT TheMMG3013NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfreque | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) 40-4000MHz,19.5dB25dBmInGaPHBT TheMMG3014NT1isaGeneralPurposeAmplifierthatisinternallyinputmatchedandinternallyoutputprematched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfreq | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) 40--4000MHz,19.5dB25dBmInGaPHBTGPA TheMMG3014NT1isageneralpurposeamplifierthatisinputandoutputinternallyprematched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) 0--6000MHz,15.5dB20.5dBmInGaPHBTGPA TheMMG3015NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0t | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) 0--6000MHz,15.5dB20.5dBmInGaPHBT TheMMG3015NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3H21NT1isaGeneralPurposeAmplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapp | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3H21NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
650V 50A PIM Module PRODUCTFEATURES □Temperaturesenseincluded □Freewheelingdiodeswithfastandsoftreverserecovery □Industrystandardpackagewithinsulatedcopperbase plateandsolderingpinsforPCBmounting □Highlevelofintegration □Lowsaturationvoltageandpositivetemperaturecoefficient | MACMICMacMic 宏微宏微科技有限公司 | | | |
1200V 600A IGBT Module PRODUCTFEATURES □VCE(sat)withpositivetemperaturecoefficient □Highshortcircuitcapability □IGBTCHIP(Trench+FieldStoptechnology) □Fastswitchingandshorttailcurrent □Freewheelingdiodeswithfastandsoftreverserecovery □10KΩGateProtectedResistanceInside □Lowswitchi | MACMICMacMic 宏微宏微科技有限公司 | | | |
600V 75A PIM Module PRODUCTFEATURES □Temperaturesenseincluded □Freewheelingdiodeswithfastandsoftreverserecovery □Industrystandardpackagewithinsulatedcopperbase plateandsolderingpinsforPCBmounting □Highlevelofintegration □Lowsaturationvoltageandpositivetemperaturecoefficient | MACMICMacMic 宏微宏微科技有限公司 | | | |
METALLIZED POLYESTER FILM CAPACITORS 文件：199.12 Kbytes Page：3 Pages | RubyconRubycon Corporation 红宝石RUBYCON株式会社 | | | |
Insulated Gate Bipolar Transistor 文件：138.49 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
1200V 100A IGBT Module 文件：540.56 Kbytes Page：5 Pages | MACMICMacMic 宏微宏微科技有限公司 | | | |
1200V 100A IGBT Module 文件：541.81 Kbytes Page：5 Pages | MACMICMacMic 宏微宏微科技有限公司 | | | |
1200V 100A IGBT Module 文件：444.76 Kbytes Page：6 Pages | MACMICMacMic 宏微宏微科技有限公司 | | | |
1700V 100A IGBT Module 文件：1.2895 Mbytes Page：3 Pages | MACMICMacMic 宏微宏微科技有限公司 | | | |
1700V 100A IGBT Module 文件：308.83 Kbytes Page：5 Pages | MACMICMacMic 宏微宏微科技有限公司 | | | |
1700V 100A IGBT Module 文件：1.83406 Mbytes Page：6 Pages | MACMICMacMic 宏微宏微科技有限公司 | | | |
1200V 100A Four-Pack Module 文件：1.58584 Mbytes Page：6 Pages | MACMICMacMic 宏微宏微科技有限公司 | | | |
600V 100A IGBT Module 文件：313.83 Kbytes Page：6 Pages | MACMICMacMic 宏微宏微科技有限公司 | | |
MMG产品属性
- 类型
描述
- 型号
MMG
- 制造商
RUBYCON
- 制造商全称
RUBYCON CORPORATION
- 功能描述
METALLIZED POLYESTER FILM CAPACITORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
宏微 |
16+ |
MODULE |
2100 |
一级代理/全新原装 现货 供应!!! |
|||
NXP(恩智浦) |
23+ |
SOT89 |
1612 |
只做原装,提供一站式配单服务,代工代料。BOM配单 |
|||
宏微 |
2020+ |
模块 |
1000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
MOTOROLA/摩托罗拉 |
23+ |
SOT-223 |
89630 |
当天发货全新原装现货 |
|||
MACMIC |
2021+ |
原厂原封装 |
93628 |
原装进口现货 假一罚百 |
|||
NXP/恩智浦 |
21+ |
SOT-89 |
28680 |
只做原装,请直接咨询 |
|||
NXP |
23+ |
NA |
3000 |
原装现货,实单价格可谈 |
|||
Freescale(飞思卡尔) |
2023+ |
N/A |
4550 |
全新原装正品 |
|||
MOTOROLA/摩托罗拉 |
22+ |
SOT-223 |
100000 |
代理渠道/只做原装/可含税 |
|||
MACMIC |
2020+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
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MMG数据表相关新闻
MMG3014NT1原包原装现货
MMG3014NT1原包原装现货
2023-4-8MMDT3904G-SOT363R-TG_UTC代理商
MMDT3904G-SOT363R-TG_UTC代理商
2023-3-6MMIC放大器NBB-312原装现货
深圳市大唐盛世半导体有限公司手机：17727572380。电话：0755-83226739QQ:626839837。微信号：15096137729
2019-12-7MMIC放大器NBB-310原装现货
深圳市大唐盛世半导体有限公司手机：17727572380。电话：0755-83226739QQ:626839837。微信号：15096137729
2019-12-3MMDJ-M65608EV-30MQ
AD9642BCPZ-250 AD9650BCPZ-25 AD9640ABCPZ-150 AD9643BCPZ-250 AD9162BBCA AD9251BCPZ-65 AD9640ABCPZ-105 AD9854ASVZ HMCAD1520TR HMC1020LP4ETR HMC1010LP4ETR HMC1097LP4ETR ADSP-TS201SABP-060 ADSP-TS201SABP-050 5962-8770002EA 5962-8777101MCA 5962-8948102VX 5962-8982502PA 5962-9078501MLA
2019-11-30MMDJ-65608EV-30MQ静态随机存取存储器
制造商:Microchip 产品种类:静态随机存取存储器 存储容量:128kbit 访问时间:30ns 电源电压-最大:5.5V 电源电压-最小:4.5V 电源电流—最大值:110mA 最小工作温度:-55C 最大工作温度:+125C 安装风格:SMD/SMT 封装/箱体:Flatpack-32 数据速率:SDR 类型:Asynchronous 商标
2019-11-29
DdatasheetPDF页码索引
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