NPN General Purpose Amplifier

Features •Thisdeviceisdesignedforgeneral-purposeamplifierapplicationsatcollectorcurrentsto300mA. •Sourcedfromprocess12.

Small Signal Transistors (NPN)

FEATURES ♦NPNSiliconEpitaxialPlanarTransistorfor switchingandamplifierapplications. ♦Ascomplementarytype,thePNP transistorMMBTA56isrecommended. ♦ThistransistorisalsoavailableintheTO-92casewith thetypedesignationMPSA06.

EPITAXIAL PLANAR NPN TRANSISTOR (DRIVER STAGE AMPLIFIER, VOLTAGE AMPLIFIER)

DRIVERSTAGEAMPLIFIERAPPLICATIONS. VOLTAGEAMPLIFIERAPPLICATIONS. FEATURE •ComplementarytoMMBTA56.

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBTA55/MMBTA56) •IdealforLowPowerAmplificationandSwitching •Lead,HalogenandAntimonyFree,RoHSCompliant(Note3) •GreenDevice(Note4) •QualifiedtoAEC-Q101StandardsforHighReliability

NPN Silicon AF Transistor

NPNSiliconAFTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBTA56/MMBTA56(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

Driver NPN Transistors

DriverNPNTRANSISTOR P/bLead(Pb)-Free

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

FEATURES EpitaxialPlanarDieConstruction ComplementaryPNPTypesAvailable (MMBTA55/MMBTA56) IdealforMediumPowerAmplificationand Switching

AMPLIFIER TRANSISTOR

AMPLIFIERTRANSISTOR FEATURES *Collector-EmitterVoltage:VCEO=80V *CollectorDissipation:PD=350mW

Surface mount general purpose Si-epitaxial planar transistors

NPNSurfacemountgeneralpurposeSi-epitaxialplanartransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

NPN General Purpose Transistor

FEATURES Epitaxialplanardieconstruction. ComplementaryPNPtypeavailable(MMBTA55/MMBTA56). Alsoavailableinleadfreeversion. APPLICATIONS Idealformediumpoweramplificationandswitching

Driver Transistors

Features ●Drivertransistors. ●NPNsilicon.

SMD General Purpose Transistor (NPN)

Features •NPNSiliconEpitaxialPlanarTransistor forSwitchingandAmplifierApplications •RoHScompliance

NPN Silicon Epitaxial Planar Small Signal Transistor

NPNSiliconEpitaxialPlanarSmallSignalTransistor forSwitchingandamplifierapplications

NPN Small Signal General Purpose Amplifier Transistors

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypesAvailable(MMBTA55/MMBTA56) •IdealforMediumPowerAmplificationandSwitching. •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityra

NPN AND PNP HIGH VOLTAGE TRANSISTOR

VOLTAGE60~80Volts POWER225mWatts FEATURES •NPNandPNPsilicon,planardesign •CollectorcurrentIC=100mA •IncompliancewithEURoHS2002/95/ECdirectives

Plastic-Encapsulate Transistor

Features •NPNSiliconEpitaxialPlanarTransistorfor switchingandamplifierapplications. •Ascomplementarytype,thePNPtranistorMMBTA56is recommended. •ThistransistorisalsoavailableintheTO-92casewiththe typedesignationMPSA06.

DriverTransistors

FEATURES •Wedeclarethatthematerialofproduct compliancewithRoHSrequirements.

NPN Silicon Epitaxial planar Transistor

NPNSiliconEpitaxialplanarTransistor Forswitchingandamplifierapplications.

SMD General Purpose PNP Transistors

•Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

Small Signal Transistors (NPN)

Features •NPNSiliconEpitaxialPlanarTransistorfor switchingandamplifierapplications. •Ascomplementarytype,thePNPtranistor MMBTA56isrecommended. •ThistransistorisalsoavailableintheTO-92case withthetypedesignationMPSA06.

SMD High Voltage NPN Transistors

NPNSurfacemountgeneralpurposeSi-epitaxialplanartransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

Plastic-Encapsulate Transistors

FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryPNPTypesAvailable (MMBTA55/MMBTA56) ●IdealforMediumPowerAmplificationand Switching

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) Features ●ForSwitchingandAmplifierApplications ●ComplementaryTypePNPTransistorMMBTA56

NPN General Purpose Transistor

FEATURES ●Highbreakdownvoltage. ●ComplementaryPNPtypeavailable (MMBTA55/MMBTA56). ●Lowcollector-emittersaturationvoltage. APPLICATIONS ●Idealformediumpoweramplificationandswitching.

Low-power pyroelectric infrared sensor signal processing chip

ProductOverview HM4002isalow-powerpyroelectricinfraredsensorsignalprocessingchip,whichcanbematchedwithinfraredsensorunitSimpleloadsensingON/OFFanddelaytimingfunctioncontrol;atthesametime,thechipbuilt-inhigh-precisionstableLDO2.6VoutputcanprovideRedpower

SOT-23 Plastic-Encapsulate Transistors

FEATURES ForSwitchingandAmplifierApplications ComplementaryTypePNPTransistorMMBTA56

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●ForSwitchingandAmplifierApplications ●ComplementaryTypePNPTransistorMMBTA56

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●ForSwitchingandAmplifierApplications ●ComplementaryTypePNPTransistorMMBTA56

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features ComplementarytoMMBTA56. Applications Idealformediumpoweramplificationandswitching.

TRANSISTOR(NPN)

FEATURES ●ForSwitchingandAmplifierApplications ●ComplementaryTypePNPTransistorMMBTA56

EPITAXIAL PLANAR NPN TRANSISTOR

文件：407.07 Kbytes Page：2 Pages

NPN General Purpose Transistor

文件：222.85 Kbytes Page：5 Pages

AMPLIFIER TRANSISTOR

文件：217.11 Kbytes Page：5 Pages

NPN Plastic-Encapsulate Transistors

文件：1.41466 Mbytes Page：5 Pages

SMD High Voltage NPN Transistors

文件：127.12 Kbytes Page：2 Pages

NPN Small Signal General Purpose Amplifier Transistors

文件：799.69 Kbytes Page：6 Pages

NPN Silicon AF Transistor

文件：535.07 Kbytes Page：7 Pages

SMD High Voltage NPN Transistors

文件：133.11 Kbytes Page：2 Pages

PWM high-efficiency LED driver control IC.

文件：254.2 Kbytes Page：12 Pages

NPN Small Signal General Purpose Amplifier Transistors

文件：670.52 Kbytes Page：4 Pages

NPN Silicon AF Transistor Low collector-emitter saturation voltage

文件：77.26 Kbytes Page：7 Pages

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：106.99 Kbytes Page：4 Pages

Driver NPN Transistors

文件：249.33 Kbytes Page：4 Pages

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

文件：191.9 Kbytes Page：4 Pages

NPN General Purpose Amplifier

文件：654.8 Kbytes Page：15 Pages

NPN (DRIVER TRANSISTOR)

文件：28.52 Kbytes Page：1 Pages

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：112.14 Kbytes Page：3 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 80V 0.5A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SOT-23 Plastic-Encapsulate Transistors

FEATURES ForSwitchingandAmplifierApplications ComplementaryTypePNPTransistorMMBTA56

AMPLIFIER TRANSISTOR

AMPLIFIERTRANSISTOR FEATURES *Collector-EmitterVoltage:VCEO=80V *CollectorDissipation:PD=350mW

NPN AND PNP HIGH VOLTAGE TRANSISTOR

NPNANDPNPHIGHVOLTAGETRANSISTOR VOLTAGE60~80VoltsPOWER225mWatts FEATURES •NPNandPNPsilicon,planardesign •CollectorcurrentIC=500mA •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/95/ECdirectives.

Driver Transistors

DriverTransistors NPNSilicon Features •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

AMPLIFIER TRANSISTOR

AMPLIFIERTRANSISTOR FEATURES *Collector-EmitterVoltage:VCEO=80V *CollectorDissipation:PD=350mW

Driver Transistors

DriverTransistors NPNSilicon

Driver Transistors(NPN Silicon)

DriverTransistors NPNSilicon

Driver Transistors(NPN Silicon)

DriverTransistors NPNSilicon

Driver Transistors NPN Silicon

DriverTransistors NPNSilicon Features •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

Evaluation Board Rev 5.0 for the Si2493/57/34/15/04

Description TheglobalSi2493/57/34/15/04-EVBevaluationboardRev5.0providesthesystemdesigneraneasywayofevaluatingtheSi2493/57/34/15/04ISOmodem®.TheSi2493/57/34/15/04-EVBconsistsofamotherboardwithapowersupply,anRS-232andUSBinterface,otherease-of-usefeatures,anda

Driver Transistors NPN Silicon

DriverTransistors NPNSilicon Features •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant