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MMBF170价格
参考价格：￥0.1615
型号：MMBF170 品牌：Fairchild 备注：这里有MMBF170多少钱，2024年最近7天走势，今日出价，今日竞价，MMBF170批发/采购报价，MMBF170行情走势销售排行榜，MMBF170报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBF170 | N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theycanb | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
MMBF170 | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHi | DIODESDiodes Incorporated 达尔科技 |  | |
MMBF170 | 0.5A,60VN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DESCRIPTION TheUTCMMBF170isanN-channelenhancementMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),lowinputcapacitance,lowgatethresholdvoltageandhighswitchingspeed. FEATURES *RDS(ON) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | |
MMBF170 | N-ChannelEnhancementModeMOSFET Features ●Surface-mountedpackage ●Advancedtrenchcelldesign ●Extremelylowthresholdvoltage ●ESDprotected(HBM>2KV) Quickreference ●BV≧60V ●Ptot≦0.83W ●ID≦0.5A ●RDS(ON)≦3Ω@VGS=10V ●RDS(ON)≦4Ω@VGS=4.5V | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 |  | |
MMBF170 | N-ChannelEnhancementModeFieldEffectTransistor 文件：517.87 Kbytes Page：13 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
0.5A,60VN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DESCRIPTION TheUTCMMBF170isanN-channelenhancementMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),lowinputcapacitance,lowgatethresholdvoltageandhighswitchingspeed. FEATURES *RDS(ON) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
PowerMOSFET PowerMOSFET 500mA,60V,N−ChannelSOT−23 Features •NVBFPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
0.5A,60VN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DESCRIPTION TheUTCMMBF170isanN-channelenhancementMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),lowinputcapacitance,lowgatethresholdvoltageandhighswitchingspeed. FEATURES *RDS(ON) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
PowerMOSFET500mA,60V PowerMOSFET500mA,60V N-ChannelSOT-23 Features •Pb-FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
TMOSFETTransistor TMOSFETTransistor N–Channel | MotorolaMotorola, Inc 摩托罗拉 |  | | |
PowerMOSFET500mA,60V PowerMOSFET500mA,60V N-ChannelSOT-23 Features •Pb-FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET PowerMOSFET 500mA,60V,N−ChannelSOT−23 Features •NVBFPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET500mA,60V PowerMOSFET500mA,60V N-ChannelSOT-23 Features •Pb-FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET500mA,60V PowerMOSFET500mA,60V N-ChannelSOT-23 Features •Pb-FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET PowerMOSFET 500mA,60V,N−ChannelSOT−23 Features •NVBFPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHi | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHi | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHi | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：132.84 Kbytes Page：3 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：79.45 Kbytes Page：4 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：200.12 Kbytes Page：5 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：200.12 Kbytes Page：5 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：200.12 Kbytes Page：5 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：132.84 Kbytes Page：3 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：79.45 Kbytes Page：4 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
PowerMOSFET500mA,60VN-ChannelSOT-23 文件：82.76 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET500mA,60VN-ChannelSOT-23 文件：82.76 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET500mA,60VN-ChannelSOT-23 文件：82.76 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel60-V(D-S)MOSFET 文件：1.7408 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
PowerMOSFET500mA,60VN-ChannelSOT-23 文件：82.76 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET500mA,60VN-ChannelSOT-23 文件：82.76 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SurfaceMountTRANSZORBTransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastr | VishayVishay Siliconix 威世科技 |  | | |
RUGGEDandLIGHTWEIGHTALUMINUMBATTERYHOLDERS 文件：115.71 Kbytes Page：2 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
HardWired170Series 文件：124.25 Kbytes Page：1 Pages | HAMMOND Hammond Manufacturing Ltd. |  | | |
CustomPowerModules 文件：40.15 Kbytes Page：2 Pages | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 |  | | |
HardWired170Series 文件：124.25 Kbytes Page：1 Pages | HAMMOND Hammond Manufacturing Ltd. | | |
MMBF170产品属性
- 类型
描述
- 型号
MMBF170
- 功能描述
MOSFET N-Ch Enhance
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2020+ |
SPT-23 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ON/安森美 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
FAIRCHILD |
2016+ |
SOT23-3 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
VBsemi(微碧) |
24+ |
SOT-23-3 |
5000 |
诚信服务,绝对原装原盘。 |
|||
ON/安森美 |
23+ |
SOT-23 |
98000 |
原装现货假一罚十 |
|||
FSC/ON |
23+ |
原包装原封□□ |
410266 |
原装进口特价供应QQ1304306553更多详细咨询库存 |
|||
FAIRCHILD/仙童 |
24+ |
SOT23 |
154632 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
21+ |
SOT-23 |
600000 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
FAIRCHILD |
23+ |
SOT-23 |
7750 |
全新原装优势 |
|||
ON |
23+ |
SOT-23 |
6000 |
全新原装现货、诚信经营! |
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商品目录结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C时）- 漏源电压（Vdss）- 栅源极阈值电压- 漏源导通电阻- 类型N沟道 最大功率耗散（Ta=25°C）225mW
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2019-2-25
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