0.5AMPEREPOWERTRANSISTORSNPNSILICON350VOLTS30WATTS

NPNSiliconHigh-VoltageTransistor ...usefulforgeneral–purpose,highvoltageapplicationsrequiringhighfT. •Collector–EmitterSustainingVoltage—VCEO(sus)=350Vdc(Min)@IC=2.5mAdc •DCCurrentGain—hFE=40(Min)@IC=100mAdc—MJE2361T •Current–Gain–BandwidthProduct—

POWERTRANSISTORS(0.5A,350V,30W)

NPNSILICONHIGH-VOLTAGETRANSISTORS ...usefulforgeneral–purpose,highvoltageapplicationsrequiringhighfT. FEATURES: •Collector–EmitterSustainingVoltage—VCEO(sus)=350V(Min)@IC=2.5mA •DCCurrentGain—hFE=40(Min)@IC=100mA—MJE2361T •Current–Gain–BandwidthP

SWITCH-MODETRANSFORMERGUIDE

CONSUMERPRODUCTS PulseoffersacompleterangeofSwitch-ModeTransformersinvarioustechnologies(slot,layerandtripleinsulationwire)usedforpowersuppliesintelevision,set-topboxes,satellitereceivers,DVDplayers,telephonechargers,andwhitegoods.Pulsealsooffersanewrangeo

AK2361

SuperIntegratedCordlessTelephoneIC 1.Built-invoicefilterforcordlesstelephone,MSKMODEM(2400bps)andCOMPANDORcircuit 2.Widerangeoperation:1.9Vto5.5V 3.Built-inbufferamplifierforceramicreceiverdriving. 4.Built-inelectronicvolumeformicrophonesensitivityandmod

Base-bandLSIforEuropeanCordlessTelephones(CT1,CT1)

SuperIntegratedCordlessTelephoneIC 1.Built-invoicefilterforcordlesstelephone,MSKMODEM(2400bps)andCOMPANDORcircuit 2.Widerangeoperation:1.9Vto5.5V 3.Built-inbufferamplifierforceramicreceiverdriving. 4.Built-inelectronicvolumeformicrophonesensitivityandmod

P-Channel60-V(D-S)MOSFET

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DO-35Case

文件：155.73 Kbytes Page：1 Pages